LINER LT5517 40mhz to 900mhz quadrature demodulator Datasheet

LT5517
40MHz to 900MHz
Quadrature Demodulator
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FEATURES
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DESCRIPTIO
RF Input Frequency Range: 40MHz to 900MHz
High IIP3: 21dBm at 800MHz
High IIP2: 58dBm at 800MHz
I/Q Gain Mismatch: 0.3dB Max
I/Q Phase Mismatch: 0.7°
Noise Figure: 12.4dB at 800MHz
Conversion Gain: 3.3dB at 800MHz
Baseband Bandwidth: 130MHz
Single Ended, 50Ω Matched 2XLO Input
Shutdown Mode
16-Lead QFN (4mm × 4mm) Package
with Exposed Pad
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APPLICATIO S
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Wireless Infrastructure
High Linearity Direct Conversion I/Q Receiver
High Linearity I/Q Demodulator
The LT®5517 is a 40MHz to 900MHz quadrature demodulator optimized for high linearity receiver applications
where high dynamic range is important. It is suitable for
communications receivers where an RF or IF signal is
directly converted into I and Q baseband signals with a
bandwidth up to 130MHz. The LT5517 incorporates balanced I and Q mixers, LO buffer amplifiers and a precision,
broadband quadrature generator derived from an on-chip
divide-by-two circuit.
The superior linearity and low noise performance of the
LT5517 is achieved across its full frequency range. A wellbalanced divide-by-two circuit generates precision quadrature LO carriers to drive the I mixer and the Q mixer.
Consequently, the outputs of the I-channel and the
Q-channel are well matched in amplitude, and their phases
are 90° apart. The LT5517 also provides excellent 50Ω
impedance matching at the 2XLO port across its entire
frequency range.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATIO
I/Q Output Power, IM3, IM2
vs RF Input Power
5V
BPF
LNA
VCC
RF +
20
LT5517
IOUT+
LPF
0
VGA
0°
RF –
IOUT–
DSP
2xLO
INPUT
2xLO
QOUT+
VGA
90°
ENABLE
EN
LPF
÷2
POUT, IM3, IM2 (dBm/TONE)
BPF
POUT
–20
TA = 25°C
P2XLO = –10dBm
–40 f2XLO = 1602MHz
fRF1 = 799.9MHz
fRF2 = 800.1MHz
–60
IM3
IM2
–80
QOUT–
5517 F01
Figure 1. High Signal-Level I/Q Demodulator for 450MHz Infrastructure Receiver
–100
–18
–14
–10
–6
–2
RF INPUT POWER (dBm)
2
5517 F01b
5517f
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LT5517
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ABSOLUTE
AXI U RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
NUMBER
QOUT –
QOUT +
IOUT –
IOUT +
TOP VIEW
16 15 14 13
GNDRF 1
RF + 2
RF
–
LT5517EUF
12 VCC
11 GND
17
3
10 2XLO
GNDRF 4
6
7
8
VCC
VCC
VCC
9
5
EN
Power Supply Voltage ............................................ 5.5V
Enable Voltage ....................................................0V, VCC
2XLO Voltage (10dBm Equivalent) .......................... ±1V
RF + to RF – Differential Voltage
(10dBm Equivalent) ................................................. ±2V
Operating Ambient Temperature ..............–40°C to 85°C
Storage Temperature Range ................. – 65°C to 125°C
Maximum Junction Temperature .......................... 125°C
GND
UF PART
MARKING
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
EXPOSED PAD (PIN 17) IS GND,
MUST BE SOLDERED TO PCB
5517
TJMAX = 125°C, θJA = 37°C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
AC ELECTRICAL CHARACTERISTICS
TA = 25°C. VCC = 5V, EN = VCC, fRF1 = 799.9MHz, fRF2 = 800.1MHz,
f2XLO = 1602MHz, P2XLO = –10dBm, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
RF Frequency Range
40 to 900
2XLO Frequency Range
80 to 1800
MHz
–15 to 0
dBm
2XLO Power
2XLO Port Return Loss
Internally Matched to a 50Ω Source
Conversion Gain
Voltage Gain, Load Impedance = 1kΩ
Gain Variation vs Temperature
–40°C to 85°C
MHz
20
0
Noise Figure
dB
3.3
dB
0.01
dB/°C
12.4
dB
Input 3rd Order Intercept
2-Tone, –10dBm/Tone, ∆f = 200kHz
21
dBm
Input 2nd Order Intercept
2-Tone, –10dBm/Tone, ∆f = 200kHz
58
dBm
10
dBm
Input 1dB Compression
Baseband Bandwidth
130
I/Q Gain Mismatch
(Note 4)
–0.3
I/Q Phase Mismatch
(Note 4)
–3.5
Output Impedance
Differential
MHz
0.03
0.3
dB
0.7
3.5
deg
120
Ω
2XLO to RF Leakage
–69
dBm
LO to RF Leakage
–80
dBm
RF to 2XLO Isolation
63
dB
5517f
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LT5517
DC ELECTRICAL CHARACTERISTICS
PARAMETER
TA = 25°C. VCC = 5V unless otherwise noted.
CONDITIONS
MIN
Supply Voltage
TYP
4.5
Supply Current
70
MAX
UNITS
5.25
V
90
110
mA
Shutdown Current
EN = LOW
0.1
20
µA
Turn-On Time
(Note 5)
200
ns
Turn-Off Time
(Note 5)
300
ns
EN = HIGH (On)
1.6
V
EN = LOW (Off)
EN Input Current
VENABLE = 5V
Output DC Offset Voltage
(IOUT+ – IOUT–, QOUT+ – QOUT–)
fLO = 1602MHz, PLO = –10dBm
Output DC Offset Variation vs Temperature
– 40°C to 85°C
1.3
V
30
mV
µA
2
0.5
7
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Tests are performed as shown in the configuration of Figure 2.
Note 3: Specifications over the – 40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
control.
µV/°C
Note 4: Measured at P2XLO = –10dBm and output frequency = 1MHz.
Note 5: Turn ON and Turn OFF times are based on rise and fall times of the
output baseband voltage with RF input power of –10dBm.
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TYPICAL PERFOR A CE CHARACTERISTICS
fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)
Conv Gain, NF, IIP3
vs RF Input Frequency
Supply Current vs Supply Voltage
IIP2 vs RF Input Frequency
80
25
110
IIP3
80
TA = 25°C
TA = –40°C
70
60
4.5
20
15
70
P2XLO = –10dBm
VCC = 5V
TA = 25°C
IIP2 (dBm)
90
TA = 85°C
GAIN (dB), NF (dB), IIP3 (dBm)
SUPPLY CURRENT (mA)
100
NF
10
5
CONV GAIN
5.5
5517 G01
60
50
40
30
0
5
4.75
5.25
SUPPLY VOLTAGE (V)
P2XLO = –10dBm
VCC = 5V
TA = 25°C
0 100 200 300 400 500 600 700 800 900
RF INPUT FREQUENCY (MHz)
5517 G02
0 100 200 300 400 500 600 700 800 900
RF INPUT FREQUENCY (MHz)
5517 G03
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LT5517
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TYPICAL PERFOR A CE CHARACTERISTICS
fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)
I/Q Output Power, IM3
vs RF Input Power
P2XLO = –10dBm
0.60 fBB = 1MHz
VCC = 5V
GAIN MISMATCH (dB)
0
OUTPUT POWER
–20
–40
IM3
–60
0.40
0.20
0
–0.20
–0.40
TA = 85°C
TA = 25°C
TA = –40°C
–80
–100
–18
–14
TA = 85°C
TA = 25°C
TA = –40°C
–0.60
–10
–6
–2
RF INPUT POWER (dBm)
2
–0.80
5517 G04
14
fRF1 = 799.9MHz
fRF2 = 800.1MHz
TA = 25°C
VCC = 5V
10
fRF = 200MHz
8
fRF = 40MHz
4.75
5
5.25
SUPPLY VOLTAGE (V)
4
–15
5.5
65
–60
–70
TA = 85°C
LO-RF LEAKAGE (dBm)
60
TA = 25°C
TA = –40°C
50
45
–12
–6
–3
–9
2XLO INPUT POWER (dBm)
–12
–9
–3
–6
2XLO INPUT POWER (dBm)
0
5517 G10
–12
–9
–6
–3
2XLO INPUT POWER (dBm)
2XLO-RF Leakage
vs 2XLO Input Power
–60
–70
f2XLO = 1600MHz
–80
f2XLO = 800MHz
–90
–120
–15
TA = 25°C
VCC = 5V
–80
f2XLO = 1600MHz
f2XLO = 800MHz
–90
–100
f2XLO = 80MHz
–12
–9
–6
–3
2XLO INPUT POWER (dBm)
0
5517 G09
TA = 25°C
VCC = 5V
–110
35
30
–15
CONV GAIN
0
–15
0
–100
40
TA = 85°C
TA = 25°C
TA = –40°C
8
LO-RF Leakage
vs 2XLO Input Power
f2XLO = 1602MHz
VCC = 5V
55
12
5517 G08
IIP2 vs 2XLO Input Power
70
16
IIP3
f2XLO = 1602MHz
VCC = 5V
fRF1 = 799.9MHz
fRF2 = 800.1MHz
4
5517 G07
IIP2 (dBm)
20
6
CONV GAIN
0
4.5
5517 G06
fRF = 800MHz
8
4
0 100 200 300 400 500 600 700 800 900
RF INPUT FREQUENCY (MHz)
CONV GAIN (dB), IIP3 (dBm)
TA = 85°C
TA = 25°C
TA = –40°C
12
TA = 85°C
TA = 25°C
TA = –40°C
–4
24
fRF = 400MHz
IIP3
16
–2
Conv Gain, IIP3
vs 2XLO Input Power
12
20
0
NF vs 2XLO Input Power
NF (dB)
CONV GAIN (dB), IIP3 (dBm)
24
f2XLO = 1602MHz
VCC = 5V
2
5517 G05
Conv Gain, IIP3 vs Supply Voltage
28
P2XLO = –10dBm
fBB = 1MHz
4 VCC = 5V
–6
100 200 300 400 500 600 700 800 900
RF INPUT FREQUENCY (MHz)
0
2XLO-RF LEAKAGE (dBm)
POUT, IM3 (dBm/TONE)
6
0.80
f2XLO = 1602MHz fRF1 = 799.9MHz
VCC = 5V
fRF2 = 800.1MHz
PHASE MISMATCH (DEGREE)
20
I/Q Phase Mismatch
vs RF Input Frequency
I/Q Gain Mismatch
vs RF Input Frequency
f2XLO = 80MHz
–110
0
5517 G11
–120
–15
–12
–9
–6
–3
2XLO INPUT POWER (dBm)
0
5517 G12
5517f
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LT5517
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TYPICAL PERFOR A CE CHARACTERISTICS
fRF = 800MHz, P2XLO = –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)
6
120
4
fRF = 40MHz
100
CONV GAIN (dB)
RF-LO ISOLATION (dB)
110
RF, 2XLO Port Return Loss
vs Frequency
Conv Gain
vs Baseband Frequency
90
80
fRF = 400MHz
0
f2XLO = 1602MHz
VCC = 5V
TA = –40°C
2
TA = 25°C
–5
RETURN LOSS (dB)
RF-LO Isolation
vs RF Input Power
TA = 85°C
0
70
fRF = 800MHz
60
–2
TA = 25°C
VCC = 5V
50
–15
–10
–5
0
5
10
RF INPUT POWER (dBm)
–4
0.1
–10
RF
–15
LO
–20
1
10
100
BASEBAND FREQUENCY (MHz)
5517 G13
1000
5517 G14
–25
0
0.40
1.20
1.60
0.80
FREQUENCY (GHz)
2
5517 G15
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PI FU CTIO S
GNDRF (Pins 1, 4): Ground Pins for RF Termination.
These pins are not internally connected, and should be
connected to the PCB ground plane for best RF isolation.
RF+, RF– (Pins 2, 3): Differential RF Input Pins. These pins
are internally biased to 2.30V. These two pins should be
DC blocked when connected to ground or other matching
components. The inputs can be terminated in a singleended configuration, but differential input drive is preferred for best performance. An external matching network
is required for impedance transformation.
EN (Pin 5): Enable Pin. When the input voltage is higher
than 1.6V, the circuit is completely turned on. When the
input voltage is less than 1.3V, the circuit is turned off.
VCC (Pins 6, 7, 8, 12): Power Supply Pins. These pins
should be decoupled using 1000pF and 0.1µF capacitors.
2XLO (Pin 10): 2XLO Input Pin. This pin is internally
biased to 1V. The input signal’s frequency should be twice
that of the desired demodulator LO frequency. The pin
should be AC coupled with an external DC blocking
capacitor.
QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output
Pins of the Q-Channel. The internal DC bias voltage is
VCC – 0.78V for each pin.
IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output
Pins of the I-Channel. The internal DC bias voltage is
VCC – 0.78V for each pin.
Exposed Pad (Pin 17): Ground Return for the Entire IC.
This pin must be soldered to the printed circuit board
ground plane.
GND (Pins 9, 11): Ground Pins. These pins are internally
tied together and to the Exposed Pad. They should be
connected to the PCB ground plane.
5517f
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LT5517
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BLOCK DIAGRA
VCC
VCC
VCC
VCC
6
7
8
12
I-MIXER
16 IOUT+
15 IOUT–
0°
RF AMP
RF +
LPF
2
LO BUFFERS
RF – 3
÷2
90°
LPF
14 QOUT+
13 QOUT–
Q-MIXER
BIAS
5
EN
9
11
17
GND GND EXPOSED
PAD
10
5517 BD
2XLO
5517f
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LT5517
TEST CIRCUIT
J3
J5
IOUT–
C15
10pF
QOUT+
C14
10pF
J4
J6
3
4
RF +
RF
QOUT –
GNDRF
LT5517
–
2XLO
GNDRF
C2
1nF
VCC
GND
GND
VCC
2
VCC
C10
3.3pF
VCC
1
RF
QOUT +
C1
T1
MABAES0054 1nF
IOUT +
R2
0Ω
QOUT–
C13
10pF
16 15 14 13
EN
J1
C16
10pF
IOUT –
IOUT+
5
6
7
8
12
C12
1nF
11
10
J2
2XLO
9
C11
1nF
17
VCC
EN
C5
1nF
R1
100k
REFERENCE
DESIGNATION
C1,C2,C5,C11,C12
C3
C4
C10
C13 TO C16
R1
R2
T1
VALUE
1nF
0.1µF
2.2µF
3.3pF
10pF
100k
0Ω
1:4
SIZE
0603
0603
0603
0603
0805
0603
0603
C3
0.1µF
C4
2.2µF
PART NUMBER
AVX 06033A102JAT1A
TAIYO YUDEN EMK107B
TAIYO YUDEN JMK107B
AVX 06033A3R3KAT2A
AVX 08055A100ZAT1A
OPTIONAL
JUMPER, OPTIONAL
M/A COM MABAES0054
5517 F02
Figure 2. Evaluation Circuit Schematic
Figure 3. Component Side Silkscreen of Evaluation Board
Figure 4. Component Side Layout of Evaluation Board
5517f
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LT5517
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APPLICATIO S I FOR ATIO
The LT5517 is a direct I/Q demodulator targeting high
linearity receiver applications. It consists of an RF amplifier, I/Q mixers, a quadrature LO carrier generator and bias
circuitry.
of the receiver are similar to those of the transformercoupled demo board, because the single-ended to differential conversion has a 1:4 impedance transformation,
similar to the transformer.
The RF signal is applied to the inputs of the RF amplifier,
and is then demodulated into I-channel and Q-channel
baseband signals using precision quadrature LO signals,
which are internally generated using a divide-by-two circuit. The demodulated I/Q signals are lowpass filtered
internally with a –3dB bandwidth of 130MHz. The differential outputs of the I-channel and Q-channel are well matched
in amplitude and their phases are 90° apart across the full
frequency range from 40MHz to 900MHz.
Table 1. The Component Values of Matching Network LSH, CS1
and CS2
FREQUENCY (MHz)
LSH (nH)
CS1, CS2 (pF)
40
437
71.1
100
169
28.6
200
80.8
14.3
300
51.5
9.6
400
37
7.2
500
28.3
5.8
600
22.6
4.9
700
18.5
4.2
800
15.6
3.7
900
13.5
3.3
RF Input Port
Differential drive is recommended for the RF inputs as
shown in Figure 2. A low loss 1:4 transformer is used on
the demonstration board for a wide bandwidth input
impedance match and to assure good noise figure and
maximum demodulator gain. Single-ended to differential
conversion can also be implemented using narrowband
L-C circuits to produce the required balanced waveforms
at the RF+ and RF– inputs using three discrete elements as
shown in Figure 5. Nominal values are listed in Table 1. (In
practice, these values should be compensated according
to the parasitics of the PCB.) The conversion gain and NF
The differential impedance of the RF inputs is listed in
Table 2. The RF inputs may also be terminated in a singleended configuration. In this case either the RF+ or the RF–
input can be simply AC coupled to a 50Ω source, while the
other RF input is connected to ground with a 1nF capacitor.
Note, however, that this will result in degraded conversion
gain and noise figure in most cases.
MATCHING NETWORK
CS1
3.7pF
RF
INPUT
TO RF+
CS2
3.7pF
LSH
15.6nH
TO RF–
5517 F05
Figure 5. RF Input Matching Network at 800MHz
5517f
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LT5517
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APPLICATIO S I FOR ATIO
quadrature Local Oscillator (LO) signals for the demodulator. The on-chip divide-by-two circuit delivers wellmatched, quadrature LO carriers to the I mixer and the Q
mixer.
Table 2. RF Input Differential Impedance
DIFFERENTIAL S11
FREQUENCY
(MHz)
DIFFERENTIAL INPUT
IMPEDANCE (Ω)
MAG
ANGLE(°)
40
240.1-j10.3
0.665
–0.8
100
245.5-j25.9
0.664
–2.5
200
236.8-j50.0
0.664
–5.1
300
223.6-j70.5
0.663
–7.6
400
207.9-j86.3
0.662
–10.2
500
190.6-j98.1
0.660
–12.7
600
173.2-j105.8
0.657
–15.3
700
156.2-j110.2
0.655
–17.9
800
141.2-j111.8
0.651
–20.4
900
129.5-j114.5
0.650
–22.9
I-Channel and Q-Channel Outputs
Each of the I-channel and Q-channel outputs is internally
connected to VCC though a 60Ω resistor. The output DC
bias voltage is VCC – 0.78V. The outputs can be DC coupled
or AC coupled to the external loads. The differential output
impedance of the demodulator is 120Ω in parallel with a
10pF internal capacitor, forming a lowpass filter with a
–3dB corner frequency at 130MHz. The load impedance,
RLOAD, should be larger than 600Ω to assure full gain. The
gain is reduced by 20 • log(1 + 120Ω/RLOAD) in dB when
the differential output is terminated by RLOAD. For example, the gain is reduced by 6.85dB when each output pin
is connected to a 50Ω load (or 100Ω differential loads).
The output should be taken differentially (or by using
differential-to-single-ended conversion) for best RF performance, including NF and IM2. Proper filtering of the
unwanted high frequency mixing product is also important to maintain the highest linearity. A convenient
2XLO Input Port
To ease the interface of the receiver with the external 2XLO
input, the 2XLO port is designed with on-chip 50Ω impedance matching up to 2GHz. The input is internally biased
at 1V. A 1nF DC blocking capacitor is required when
connected to the external 2XLO source.
The 2XLO frequency is required to be twice the desired
operating frequency in order for the chip to generate the
LT5517
VCC
J1
RF
T1
MABAES0054
5
C10
3.3pF
4
C1
1nF
1
2
RF+
2
250Ω
–
3
3
RF
2.30V
C2
1nF
5517 F06
Figure 6. RF Input Equivalent Circuit with External Broadband Matching
5517f
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LT5517
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APPLICATIO S I FOR ATIO
approach is to terminate each output with a shunt capacitor. The capacitor value can be optimized depending upon
the operating frequency and the specific PCB layout.
When AC output coupling is used, the resulting highpass
filter’s –3dB roll-off frequency is defined by the R-C
constant of the blocking capacitor and RLOAD, assuming
RLOAD > 600Ω.
The phase relationship between the I-channel output signal and the Q-channel output signal is fixed. When the LO
input frequency is higher than the RF input frequency, then
the Q-channel outputs (QOUT+, QOUT–) lead the I-channel
outputs (IOUT+, IOUT–) by 90°.
Care should be taken when the demodulator’s outputs are
DC coupled to the external load to make sure that the I/Q
mixers are biased properly. If the current drain from the
outputs exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no
more than 13mA when connected to an external load with
a DC voltage higher than VCC – 0.78V.
When the LO input frequency is lower than the RF input
frequency, then the Q-channel outputs lag the I-channel
outputs by 90°. Note that the phase relationship of the Iand Q-channel outputs relative to the LO can vary by 180°,
depending on start-up conditions. This is the nature of a
frequency divider-based quadrature phase generator.
VCC
60Ω
60Ω
60Ω
60Ω
IOUT+
IOUT–
10pF
16
15
+
QOUT
QOUT–
14
13
10pF
5517 F07
Figure 7. I/Q Output Equivalent Circuit
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LT5517
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PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.15 ± 0.05
2.90 ± 0.05 (4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
4.00 ± 0.10
(4 SIDES)
0.75 ± 0.05
R = 0.115
TYP
0.55 ± 0.20
15
16
PIN 1
TOP MARK
1
2.15 ± 0.10
(4-SIDES)
2
(UF) QFN 0503
0.200 REF
0.00 – 0.05
0.30 ± 0.05
0.65 BSC
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
4. EXPOSED PAD SHALL BE SOLDER PLATED
5517f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LT5517
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RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
DC-3GHz High Signal Level Downconverting Mixer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5515
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5520
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports
LT5522
600MHz to 2.7GHz High Signal Level Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
Infrastructure
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC®5505
RF Power Detectors with >40dB Dynamic Range
300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5507
100kHz to 1000MHz RF Power Detector
100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
44dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Adjustable Gain and Offset
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
LT5506
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
LT5546
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V
Supply, –7dB to 56dB Linear Power Gain
RF Power Controllers
LTC1757A
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1758
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1957
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC4400
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4403
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones
5517f
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Linear Technology Corporation
LT/TP 0104 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2004