NCS2502 650 mA 110 MHz Current Feedback Op Amp with Enable Feature NCS2502 is a 650 mA 110MHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. This device features an enable pin. http://onsemi.com MARKING DIAGRAMS Features −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 110 MHz Typ Slew Rate 230 V/ms Supply Current 650 mA Input Referred Voltage Noise 5 nV/ ǸHz THD −49 dB (f = 5.0 MHz, VO = 2.0 Vp−p) Output Current 80 mA Enable Pin Available Pin Compatible with EL5160, MAX4452 Pb−Free Packages are Available Portable Video Line Drivers Radar/Communication Receivers Set Top Box NTSC/PAL/HDTV 3 NORMAILIZED GAIN(dB) 2 1 VS = ±5.0V VOUT = 0.5V Gain = +2 RF = 1.2kW RL = 100W 6 5 12 −2 3 VS = ±2.5V VOUT = 1.0V −5 0.1 1 6 YA2AYW G 1 = NCS2502 = Assembly Location = Wafer Lot = Year = Work Week = Date Code = Pb−Free Package SO−8 PINOUT NC 1 −IN 2 +IN 3 VEE 4 8 EN − 7 VCC + 6 OUT 5 NC (Top View) VS = ±5.0V VOUT = 1.0V 10 1 FREQUENCY (MHz) YA2M G SOT23−6 (TSOP−6) SN SUFFIX CASE 318G G VS = ±5.0V VOUT = 2.0V −3 6 SC−70−6 (SC−88) SQ SUFFIX CASE 419B 4 M VS = ±2.5V VOUT = 0.5V N2502 ALYW G 1 YA2, N2502 A L Y W VS = ±2.5V VOUT = 2.0V −1 −6 0.01 1 1 0 −4 8 6 Applications • • • • • 8 SO−8 D SUFFIX CASE 751 SOT23−6/SC70−6 PINOUT 100 1000 Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 OUT 1 VEE 2 +IN 3 + • • • • • • • • • − 6 VCC 5 EN 4 −IN (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 2 1 Publication Order Number: NCS2502/D NCS2502 PIN FUNCTION DESCRIPTION Pin (SO−8) Pin (SOT23/SC70) Symbol Function 6 1 OUT Output Equivalent Circuit VCC ESD OUT VEE 4 2 VEE Negative Power Supply 3 3 +IN Non−inverted Input VCC ESD ESD +IN −IN VEE 2 4 −IN Inverted Input 7 6 VCC Positive Power Supply See Above 8 5 EN Enable VCC EN ESD VEE 1, 5 N/A NC No Connect ENABLE PIN TRUTH TABLE Enable High* Low Enabled Disabled *Default open state VCC +IN OUT −IN CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2502 ATTRIBUTES Characteristics Value ESD Human Body Model Machine Model Charged Device Model 2.0 kV (Note 1) 200 V 1.0 kV Moisture Sensitivity (Note 2) Flammability Rating Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in 1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage VS 11 VDC Input Voltage Range VI vVS VDC Input Differential Voltage Range VID vVS VDC Output Current IO 100 mA Maximum Junction Temperature (Note 3) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −60 to +150 °C Power Dissipation PD (See Graph) mW Thermal Resistance, Junction−to−Air SO−8 SC70−6 SOT23−6 °C/W RqJA 172 215 154 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION 1400 Maximum Power Dissapation (mW) The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. 1200 SO−8 Pkg 1000 SOT23 Pkg 800 600 SC70 Pkg 400 200 0 −50 −25 0 50 75 25 100 Ambient Temperature (°C) 125 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 150 NCS2502 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p 110 90 AV = +2.0 15 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.08 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.2 ° Slew Rate AV = +2.0, Vstep = 2.0 V 230 V/ms Settling Time 0.01% 0.1% AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V 160 35 (10%−90%) AV = +2.0, Vstep = 2.0 V 9.0 ns TIME DOMAIN RESPONSE SR ts ns tr tf Rise and Fall Time tON Turn−on Time 900 ns tOFF Turn−off Time 400 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p, RL = 150 W −49 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −57 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −53 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 2.0 Vp−p 35 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 2.0 Vp−p 55 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 5 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting 25 25 pAń ǸHz http://onsemi.com 4 NCS2502 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit −8.0 0 +8.0 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient VIH Input High Voltage (Enable) (Note 4) VIL Input Low Voltage (Enable) (Note 4) mV/°C 6.0 +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 4) −20 −20 +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V "3.0 "0.4 +20 +20 +40 −10 mA nA/°C VCC−1.5 V V VCC−3.5 V V INPUT CHARACTERISTICS VCM CMRR Input Common Mode Voltage Range (Note 4) Common Mode Rejection Ratio RIN Input Resistance CIN Differential Input Capacitance (See Graph) "3.0 "4.0 V 50 55 dB 4 350 MW W 1.0 pF 0.03 W +Input (Non−Inverting) −Input (Inverting) OUTPUT CHARACTERISTICS ROUT Output Resistance VO Output Voltage Swing "3.0 "3.5 V IO Output Current "40 "80 mA POWER SUPPLY VS Operating Voltage Supply 10 V IS,ON Power Supply Current − Enabled VO = 0 V 0.4 0.65 1.2 mA IS,OFF Power Supply Current − Disabled VO = 0 V 0 0.04 0.3 mA PSRR Power Supply Rejection Ratio (See Graph) 50 60 4. Guaranteed by design and characterization. http://onsemi.com 5 dB NCS2502 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p 110 70 AV = +2.0 10 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.08 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.2 ° Slew Rate AV = +2.0, Vstep = 1.0 V 180 V/ms Settling Time 0.01% 0.1% AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V 155 25 (10%−90%) AV = +2.0, Vstep = 1.0 V 8.0 ns TIME DOMAIN RESPONSE SR ts ns tr tf Rise and Fall Time tON Turn−on Time 900 ns tOFF Turn−off Time 400 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p, RL = 150 W −49 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −57 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −53 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 1.0 Vp−p 35 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 1.0 Vp−p 55 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 5 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting 25 25 pAń ǸHz http://onsemi.com 6 NCS2502 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit −8.0 0 +8.0 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 5) Input Bias Current Temperature Coefficient VIH Input High Voltage (Enable) (Note 5) VIL Input Low Voltage (Enable) (Note 5) mV/°C 6.0 −20 −20 +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V "3.0 "0.4 +20 +20 +40 −10 mA nA/°C VCC−1.5 V V VCC−3.5 V V INPUT CHARACTERISTICS VCM CMRR Input Common Mode Voltage Range (Note 5) Common Mode Rejection Ratio RIN Input Resistance CIN Differential Input Capacitance (See Graph) "1.3 "1.5 V 50 55 dB 4 350 MW W 1.0 pF 0.02 W +Input (Non−Inverting) −Input (Inverting) OUTPUT CHARACTERISTICS ROUT Output Resistance VO Output Voltage Swing "1.1 "1.4 V IO Output Current "40 "80 mA POWER SUPPLY VS Operating Voltage Supply 5.0 V IS,ON Power Supply Current − Enabled VO = 0 V 0.3 0.55 1.1 mA IS,OFF Power Supply Current − Disabled VO = 0 V 0 0.04 0.3 mA PSRR Power Supply Rejection Ratio (See Graph) 50 60 5. Guaranteed by design and characterization. + − VIN VOUT RL RF RF Figure 4. Typical Test Setup (AV = +2.0, RF = 1.8 kW or 1.2 kW or 1.0 kW, RL = 100 W) http://onsemi.com 7 dB NCS2502 3 6 NORMAILIZED GAIN(dB) 1 0 VS = ±5.0V VOUT = 0.5V VS = ±2.5V VOUT = 0.5V NORMALIZED GAIN (dB) Gain = +2 RF = 1.2kW RL = 100W 2 VS = ±2.5V VOUT = 2.0V −1 −2 VS = ±5V VOUT = 2.0V −3 −4 −5 −6 0.01 VS = ±5.0V VOUT = 1.0V 0.1 VS = ±2.5V VOUT = 1.0V 1 10 FREQUENCY (MHz) Gain = +1 RF = 1.2kW RL = 100W 3 0 VS = ±2.5V VOUT = 1.0V −6 −12 0.01 1000 Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 VS = ±2.5V VOUT = 0.7V VS = ±5.0V VOUT = 1.0V 0.10 1 10 FREQUENCY (MHz) 100 1000 Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 6 6 VS = ±5V AV = +4 3 NORMAILIZED GAIN(dB) NORMALIZED GAIN (dB) VS = ±5.0V VOUT = 0.7V VS = ±5.0V VOUT = 1.0V −3 −9 100 VS = ±2.5V VOUT = 1.0V 0 VS = ±2.5V AV = +2 −3 VS = ±5V AV = +2 −6 VOUT = 2.0V RL = 100W −9 −12 0.01 0.10 VS = ±2.5V AV = +4 1 10 FREQUENCY (MHz) VS = ±5.0V AV = +2 3 0 VS = ±2.5V AV = +4 −3 −6 VOUT = 0.5V RL = 100W −9 100 −12 0.01 1000 0.10 VS = ±5.0V AV = +4 VS = ±2.5V AV = +2 10 1 FREQUENCY (MHz) 100 Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency Figure 9. Small Signal Step Response Vertical: 500 mV/div Horizontal: 10 ns/div Figure 10. Large Signal Step Response Vertical: 1 V/div Horizontal: 10 ns/div http://onsemi.com 8 1000 NCS2502 −30 −40 VS = ±5V f = 5MHz RL = 150W DISTORTION (dB) −40 −45 DISTORTION (dB) −35 −45 HD3 THD −50 −55 −60 HD2 −65 VS = ±5V VOUT= 2VPP RL = 150W THD −50 HD3 −55 HD2 −60 −70 −65 −75 −70 −80 1 10 FREQUENCY (MHz) 0.5 100 Figure 11. THD and Harmonic Distortion (dB) vs Frequency (MHz) VS = ±5V 7 −25 3.5 4 VS = ±5V −30 6 CMRR (dB) VOLTAGE NOISE (nV/pHz) 3 −20 5 4 3 −35 −40 −45 −50 2 −55 1 −60 0 −65 10k 1 10 100 FREQUENCY (kHz) 1000 100k Figure 13. Input Referred Noise vs. Frequency 1M FREQUENCY (Hz) 10M 100M Figure 14. CMRR vs. Frequency 0 0.1 VS = ±5V RL = 150W 0.08 DIFFERENTIAL GAIN (%) −10 −20 PSRR(dB) 2 2.5 VOUT (VPP) Figure 12. THD and Harmonic Distortion (dB) vs Output Voltage (VPP) 8 +2.5V −30 −40 −50 1.5 1 +5.0V −2.5V −60 −70 0.01 −5.0V 0.1 1 FREQUENCY (MHz) 0.06 0.04 0.02 4.43MHz 3.58MHz 0 −0.02 −0.04 10MHz −0.06 −0.08 10 −0.1 −0.8 100 Figure 15. PSRR vs. Frequency −0.6 0.4 0.2 −0.4 −0.2 0 OFFSET VOLTAGE (V) Figure 16. Differential Gain http://onsemi.com 9 0.6 0.8 NCS2502 0.3 VS = ±5V RL = 150W CURRENT (mA) DIFFERENTIAL PHASE (°) 0.2 0.9 0.1 3.58MHz 0 −0.1 0.8 85°C 0.7 25°C 0.6 −40°C 0.5 4.43MHz 0.4 −0.2 10MHz −0.3 −0.8 0.3 −0.6 0.4 0.2 −0.4 −0.2 0 OFFSET VOLTAGE (V) 0.8 0.6 4 Figure 17. Differential Phase 5 6 7 9 8 SUPPLY VOLTAGE (V) 10 11 Figure 18. Supply Current vs. Power Supply (Enabled) 8 0.12 85°C 25°C OUTPUT VOLTAGE (VPP) CURRENT (mA) 0.1 −40°C 0.08 0.06 0.04 0.02 25°C 6 85°C 5 −40°C 4 3 0 2 4 5 6 8 7 9 SUPPLY VOLTAGE (V) 10 11 4 Figure 19. Supply Current vs. Temperature (Disabled) 5 6 8 7 9 SUPPLY VOLTAGE (V) 10 11 Figure 20. Output Voltage Swing vs. Supply Voltage 100 9 8 VS = ±5V OUTPUT RESISTANCE (W) OUTPUT VOLTAGE (VPP) 7 7 6 5 VS = ±2.5V 4 3 2 AV = +2 f = 1MHz 1 10 100 1000 LOAD RESISTANCE (W) 10 1 0.1 0.01 0.01 0 1 VS = ±5V 10k Figure 21. Output Voltage Swing vs. Load Resistance 0.1 1 10 FREQUENCY (MHz) Figure 22. Output Resistance vs. Frequency http://onsemi.com 10 100 NCS2502 10M 12 1M TRANSIMPEDANCE (W) 18 Gain(dB) 6 VS = ±5V 100k 0 100pF −6 −12 47pF VS = ±5V RF = 1.2kW RL = 100W Gain= +2 −18 −24 1k 100 10pF 10 1 0.01 −30 1 10k 10 100 Frequency (MHz) 1000 Figure 23. Frequency Response vs. CL EN 0.1 1 100 10 FREQUENCY (MHz) 1000 10k Figure 24. Transimpedance (ROL) vs. Frequency EN OUT OUT Output Signal: Squarewave, 10MHz, 2VPP Output Signal: Squarewave, 10MHz, 2VPP Figure 25. Turn ON Time Delay Horizontal: 4 ns / Div Vertical: 10mV/Div Figure 26. Turn OFF Time Delay Horizontal: 4 ns / Div Vertical: 10mV/Div http://onsemi.com 11 NCS2502 General Design Considerations resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces X0.1 dB of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to use a current feedback amplifier with the output shorted directly to the inverting input. The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed−loop bandwidth depends on the value of the feedback resistor. The closed−loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 27. 10 GAIN (dB) 5 Printed Circuit Board Layout Techniques RF = 1 kW 0 Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16″ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4″ are recommended. RF = 1.2 kW −5 RF = 1.8 kW −10 −15 AV = +2 VCC = +5 V VEE = −5 V −20 0.01 0.1 1.0 10 100 1000 10000 Video Performance FREQUENCY (MHz) This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. Figure 27. Frequency Response vs. RF The −3.0 dB bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect. ESD Protection Feedback and Gain Resistor Selection for Optimum Frequency Response This device is protected against electrostatic discharge (ESD) on all pins as specified in the attributes table. Note: Human Body Model for +IN and −IN pins are rated at 0.8 kV while all other pins are rated at 2.0 kV. Under closed−loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed−loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. A current feedback operational amplifier’s key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of 1% should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF http://onsemi.com 12 NCS2502 ORDERING INFORMATION Package Shipping† NCS2502SQT2G* SC70−6 (SC88) (Pb−Free) 3000 Tape & Reel NCS2502SNT1G SOT23−6 (TSOP−6) (Pb−Free) 3000 Tape & Reel NCS2502DG SO−8 (Pb−Free) 98 Units/Rail NCS2502DR2G SO−8 (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact ON Semiconductor for ordering information. http://onsemi.com 13 NCS2502 PACKAGE DIMENSIONS SO−8 D SUFFIX CASE 751−07 ISSUE AG NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 0.25 (0.010) S B 1 M Y M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 14 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCS2502 PACKAGE DIMENSIONS SC−70−6 (SC−88) SQ SUFFIX CASE 419B−02 ISSUE 02 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 15 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NCS2502 PACKAGE DIMENSIONS SOT23−6 (TSOP−6) SN SUFFIX CASE 318G−02 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L 6 S 1 5 4 2 3 B MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 D G M J C 0.05 (0.002) K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 16 For additional information, please contact your local Sales Representative. NCS2502/D