IRF IRHLF87Y20 Radiation hardened logic level power mosfet Datasheet

PD-97810
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF87Y20
20V, N-CHANNEL
R8
™
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHLF87Y20 100K Rads (Si) 32mΩ
IRHLF83Y20
300K Rads (Si)
32mΩ
ID
12A*
12A*
International Rectifier’s R8TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
TO-39
Features:
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
12*
10.2
48
15.6
0.13
±12
43
12
1.6
2.85
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
08/13/13
IRHLF87Y20
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
20
—
—
V
—
0.03
—
V/°C
—
—
1.0
—
20
—
—
27
26
—
-4.7
—
—
—
32
31
2.3
—
—
1.0
10
—
—
—
—
—
—
—
—
—
—
—
—
20
4.0
4.5
17
63
26
12
7.0
100
-100
27
5.7
8.5
21
114
30
22
—
mΩ
V
mV/°C
S
µA
nA
nC
ns
nH
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 4.5V, ID = 10.2A
Ã
VGS = 7.0V, ID = 10.2A
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 10.2A Ã
VDS= 16V ,VGS= 0V
VDS = 16V,
VGS = 0V, TJ =125°C
VGS = 12V
VGS = -12V
VGS = 5.5V, ID =12A
VDS = 10V
VDD = 10V, ID = 12A, ‡
VGS = 5.5V, RG = 2.35Ω
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2431
592
143
—
—
—
Gate Resistance
—
0.94
—
pF
Ω
VGS = 0V, VDS = 20V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
12*
48
1.2
41
51
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 12A, VGS = 0V Ã
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
VDD ≤ 20V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
8.0
Test Conditions
°C/W
* Current is limited by package
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLF87Y20
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
Up to 300K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Diode Forward Voltage „
Units
Min
Max
20
1.0
—
—
—
—
2.3
100
-100
1.0
µA
—
—
32
1.2
mΩ
V
V
nA
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 12V
VGS = -12V
VDS= 16V, VGS= 0V
VGS = 4.5V, ID = 10.2A
VGS = 0V, ID = 12A
1. Part numbers IRHLF87Y20, IRHLF83Y20
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
(MeV)
(µm)
2
(MeV/(mg/cm ))
37 ± 5%
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
-1V
-2V
-3V
-5V
-10V
8
4
12
8
-
12
6
-
298 ± 5%
38 ± 5%
18
18
60 ± 5%
320 ± 5%
32 ± 7.5%
18
18
81 ± 5%
375 ± 7.5%
28 ± 7.5%
18
18
15
Bias VDS (V)
20
16
LET=37 ± 5%
12
LET=60 ± 5%
8
LET=81 ± 5%
4
0
0
-2
-4
-6
-8
-10
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLF87Y20
Pre-Irradiation
100
100
10
BOTTOM
1
2..2V
20µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
7.0V
5.5V
4.5V
3.5V
3.0V
2.7V
2.5V
2.2V
2.2V
20µs PULSE WIDTH,
Tj =150°C
0.1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T J = 150°C
T J = 25°C
1
VDS = 20V
20µs PULSE
15 WIDTH
01
ID = 12A
1.4
1.2
1.0
0.8
0.6
VGS = 4.5V
0.4
1
1.5
2
2.5
3
3.5
4
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
BOTTOM
10
VGS
10V
7.5V
5.5V
4.5V
3.5V
3.0V
2.7V
2.5V
2.2V
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHLF87Y20
80
ID = 12A
70
60
50
T J = 150°C
40
T J = 25°C
30
20
10
0
0
2
4
6
8
RDS(on), Drain-to -Source On Resistanc (m Ω)
RDS(on), Drain-to -Source On Resistance (m Ω)
Pre-Irradiation
60
50
T J = 150°C
40
T J = 25°C
30
20
10
VGS = 4.5V
0
0
10
10
20
VGS, Gate -to -Source Voltage (V)
40
50
ID, Drain Current (A)
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
2.5
40
ID = 250µ$
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
30
38
36
34
32
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0
30
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7 Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHLF87Y20
4500
12
VGS = 0V,
f = 1.0 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
3500
ID = 12A
VGS, Gate-to-Source Voltage (V)
4000
C, Capacitance (pF)
Pre-Irradiation
C oss = C ds + C gd
3000
Ciss
2500
Coss
2000
1500
1000
Crss
500
10
VDS = 6.0V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
0
0.1
1
10
100
0
4
8
12 16 20 24 28 32 36 40
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
ISD, Reverse Drain Current (A)
VDS = 16V
VDS = 10V
20
LIMITED BY PACKAGE
16
ID, Drain Current (A)
T J = 150°C
10
T J = 25°C
1
12
8
4
VGS = 0V
0.1
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
IRHLF87Y20
100µs
10
1ms
10ms
1
0.1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
ID
5.4A
7.6A
12A
TOP
80
BOTTOM
60
40
20
0
0.1
1
10
100
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
10
Thermal Response ( Z thJC )
D = 0.50
0.20
1
0.10
0.02
P DM
0.05
t1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHLF87Y20
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
V
- DD
IAS
VGS
20V
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
5.5V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
V GS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLF87Y20
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 20V, starting TJ = 25°C, L = 0.6mH
Peak IL = 12A, VGS =12V
 ISD ≤ 12A, di/dt ≤ 423A/µs,
VDD ≤ 20V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
16 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
‡ Switching speed maximum limits are based on
manufacturing test equipment and capability.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
NOTES
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2013
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