MIXA81H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V Part name (Marking on product) MIXA81H1200EH 13, 21 1 9 2 10 19 E72873 15 3 11 4 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Optimizes pin layout IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110518a 1-6 MIXA81H1200EH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V ±20 ±30 V V IC25 IC80 collector current TC = 25°C TC = 80°C 120 84 A A Ptot total power dissipation TC = 25°C 390 W VCE(sat) collector emitter saturation voltage IC = 77 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 1.8 2.1 2.1 V V VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE TVJ = 25°C 6.0 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C 0.03 0.6 0.2 mA mA IGES gate emitter leakage current VGE = ±20 V 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A 230 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 75 A VGE = ±15 V; RG = 10 W TVJ = 125°C 70 40 250 100 6.8 8.3 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 10 W; TVJ = 125°C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 10 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 25°C continuous transient 5.4 TVJ = 125°C 225 A 10 µs A 0.32 K/W 300 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 100 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1600 A/µs IF = 100 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25°C 1200 V TC = 25°C TC = 80°C 135 90 A A 2.2 V V TVJ = 25°C TVJ = 125°C 1.95 1.95 TVJ = 125°C 12.5 100 350 4 µC A ns mJ 0.4 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110518a 2-6 MIXA81H1200EH Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) dS dA creep distance on surface strike distance through air Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink Conditions min. -40 -40 Ratings typ. max. 125 150 125 Unit °C °C °C 3000 V~ IISOL < 1 mA; 50/60 Hz 200 3 6 10 7.5 with heatsink compound Weight Nm mm mm 2.5 mW 0.02 K/W 300 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 V0 R0 R0 Definitions IGBT Conditions T1 - T6 min. TVJ = 150°C free wheeling diode D1 - D6 TVJ = 150°C Ratings typ. max. 1.1 17.9 1.09 9.1 Unit V mW V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110518a 3-6 MIXA81H1200EH Circuit Diagram 13, 21 2D Data Matrix FOSS-ID 6 digits 1 9 2 10 XXX XX-XXXXX Logo Part name 19 15 3 11 4 12 YYCWx Prod.Index Date Code Part number M I X A 81 H 1200 EH 14, 20 Outline Drawing = Module = IGBT = XPT = standard = Current Rating [A] = H~ Bridge = Reverse Voltage [V] = E3-Pack Dimensions in mm (1 mm = 0.0394“) Remark: Dimensions without tolerances acc. DIN ISO 2768-T1-m Product Marking Ordering Part Name Marking on Product Standard MIXA 81 H 1200 EH MIXA81H1200EH IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 5 511053 20110518a 4-6 MIXA81H1200EH Transistor T1 - T6 140 IC [A] 140 VGE = 15 V 120 120 100 100 TVJ = 25°C 80 60 [A] 40 20 20 0.5 1.0 1.5 2.0 2.5 3.0 9V 60 40 0 0.0 0 0.0 3.5 11 V TVJ = 125°C IC 80 TVJ = 125°C 13 V VGE = 15 V 17 V 19 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 140 IC = 75 A VCE = 600 V 120 15 100 80 VGE [A] 60 [V] IC 40 5 TVJ = 125°C 20 0 10 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 50 100 150 16 9 10 E E 8 [mJ] 6 [mJ] 4 Eoff 0 0 20 40 Eoff 8 7 Eon IC = 75 A VCE = 600 V VGE = ±15 V TVJ = 125°C 6 Eon 2 300 10 RG = 10 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 12 250 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 14 200 QG [nC] VGE [V] 60 80 100 120 140 160 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 5 8 10 12 14 16 18 20 22 24 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20110518a 5-6 MIXA81H1200EH Inverter D1 - D6 200 24 TVJ = 125°C VR = 600 V 20 150 200 A Qrr 16 IF 100 [A] 100 A [µC] 12 TVJ = 125°C 50 TVJ = 25°C 0 0.0 0.5 1.0 50 A 8 1.5 2.0 2.5 4 1000 3.0 1200 1400 160 2000 2200 700 TVJ = 125°C 140 [A] 1800 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt Fig. 7 Typ. Forward current versus VF IRM 1600 diF /dt [A/µs] VF [V] 200 A 600 100 A 500 VR = 600 V 120 trr 50 A 100 TVJ = 125°C VR = 600 V 200 A 400 [ns] 300 80 100 A 200 60 50 A 100 40 1000 1200 1400 1600 1800 2000 0 1000 2200 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 1 8 200 A TVJ = 125°C VR = 600 V Diode 6 IGBT 100 A Erec ZthJC 0.1 4 [mJ] 50 A IGBT [K/W] 1 2 3 4 2 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.01 0.001 0.01 FRD Ri ti Ri ti 0.072 0.037 0.156 0.055 0.002 0.03 0.03 0.08 0.092 0.067 0.155 0.086 0.002 0.03 0.03 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20110518a 6-6