Advanced Technical Information IXFN 340N06 HiPerFETTM Power MOSFETs Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 60 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IL(RMS) TC = 25°C, Chip capability Terminal current limit 340 100 A A IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C 1360 200 A A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 700 W TJ TJM -55 ... +150 150 °C °C Tstg -55 ... +150 °C 2500 3000 V~ V~ VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque VDSS = 60 V ID25 = 340 A 3 mW RDS(on) = t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications Symbol Test Conditions VDSS V GS = 0 V, ID = 3 mA 60 VGH(th) V DS = VGS, ID = 8 mA 2.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) V GS = 10 V, ID = 100A Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C V 4.0 V ±200 nA 100 2 mA mA 3 mW DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages Easy to mount Space savings High power density 98751 (10/00) IXFN 340N06 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 60A, pulse test 80 Ciss Coss 105 S 16800 pF 8200 pF 5000 pF 140 ns 95 ns 200 ns 33 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 100A td(off) RG = 2 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 50V, ID = 100A Qgd 600 nC 110 nC 300 nC RthJC 0.18 RthCK K/W 0.05 Source-Drain Diode K/W miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD I F = 100A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % t rr QRM IRM I F = 50A, -di/dt = 100 A/ms, VR = 40V; TJ =25°C 1.4 8 340 A 1360 A 1.2 V 250 ns mC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025