Renesas FS10KMH-03 Mitsubishi nch power mosfet high-speed switching use Datasheet

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Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
FS10KMH-03
OUTLINE DRAWING
Dimensions in mm
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
f 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
w
2.6 ± 0.2
1 2 3
¡2.5V DRIVE
¡VDSS .................................................................................. 30V
¡rDS (ON) (MAX) .............................................................. 92mΩ
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.) ............. 35ns
¡Viso ................................................................................ 2000V
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Conditions
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
Drain current
Drain current (Pulsed)
IDA
Avalanche drain current (Pulsed)
IS
ISM
Source current
Source current (Pulsed)
PD
T ch
Maximum power dissipation
Channel temperature
T stg
Viso
Storage temperature
Isolation voltage
AC for 1minute, Terminal to case
Weight
Typical value
—
VGS = 0V
VDS = 0V
L = 30µH
Ratings
Unit
30
±10
V
V
10
40
A
A
10
A
10
40
A
A
15
–55 ~ +150
W
°C
–55 ~ +150
2000
°C
V
2.0
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
rDS (ON)
VDS (ON)
Drain-source on-state resistance
Drain-source on-state voltage
y fs
Ciss
Forward transfer admittance
Input capacitance
Coss
Crss
Output capacitance
Reverse transfer capacitance
td (on)
tr
Turn-on delay time
Rise time
td (off)
Turn-off delay time
tf
VSD
Fall time
Source-drain voltage
Rth (ch-c)
trr
Thermal resistance
Reverse recovery time
Limits
Test conditions
Unit
Min.
Typ.
Max.
30
—
—
—
—
±0.1
V
µA
—
0.6
—
0.9
0.1
1.2
mA
V
—
68
92
mΩ
—
—
88
0.34
141
0.46
mΩ
V
—
—
12
540
—
—
S
pF
—
—
160
55
—
—
pF
pF
—
—
12
35
—
—
ns
ns
—
45
—
ns
—
—
40
1.0
—
1.5
ns
V
—
—
—
35
8.3
—
°C/W
ns
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
ID = 5A, VGS = 2.5V
ID = 5A, VGS = 4V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –50A/µs
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
16
12
8
4
0
0
20
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
5
3
2
50
100
200
100ms
1ms
100
7
5
3
2
10ms
DC
TC = 25°C
Single Pulse
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
Tc = 25°C
Pulse Test
16
150
tw = 10ms
101
7
5
3
2
10–1
7
5
4V
VGS = 5V
3V
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
20
VGS = 5V
2.5V
12
PD = 15W
8
2V
4
4V 3V
2.5V
8
2V
6
Tc = 25°C
Pulse Test
4
2
1.5V
1.5V
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
100
1.6
1.2
ID = 15A
0.8
10A
0.4
5A
0
0
1.0
2.0
3.0
4V
40
20
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
Tc = 25°C
VDS = 10V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
60
TRANSFER CHARACTERISTICS
(TYPICAL)
16
8
102
7
5
4
3
2
VDS = 5V
Pulse Test
TC = 25°C
75°C
125°C
101
7
5
4
3
2
0
1.0
2.0
3.0
4.0
100 0
10
5.0
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
Tch = 25°C
f = 1MHZ
VGS = 0V
104
7
5
3
2
102
7
5
3
2
VGS = 2.5V
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
5.0
24
103
7
5
3
2
80
DRAIN CURRENT ID (A)
32
0
Tc = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
40
CAPACITANCE
Ciss, Coss, Crss (pF)
4.0
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
Tc = 25°C
Pulse Test
Ciss
Coss
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
2.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
102
7
5
4
3
td(off)
tf
tr
2
td(on)
101
7
5
4
3
Tch = 25°C
VDD = 15V
VGS = 4V
RGEN = RGS = 50Ω
2
100 0
10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
5.0
SOURCE CURRENT IS (A)
3.0
VDS = 10V
2.0
20V
25V
1.0
0
2
4
6
8
75°C
16
25°C
8
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
2
100
7
5
4
3
2
–50
0
50
100
VDS = 10V
ID = 1mA
1.6
1.2
0.8
0.4
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
TC = 125°C
24
0
101
7 VGS = 4V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
32
10
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
40
Tch = 25°C
ID = 10A
4.0
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101 D = 1.0
7 0.5
5
3 0.2
2
100
7
5
3
2
PDM
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–1 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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