Rohm BR35H160-WC Automotive serial eeprom Datasheet

Automotive Serial EEPROMs
125℃ SPI BUS ICs
BR35□□□□ Family
BR35H□□□-WC Series
No.11001ECT09
●Description
BR35H□□□-WC Series is a SPI BUS interface method serial EEPROM.
●Features
1) High speed clock operation up to 5MHz(Max.)
2) 2.5V to 5.5V single power source operation most suitable for battery use.
3) Page write mode useful for initial value at factory shipment.
4) Highly reliable connection by Au pad and Au wire.
5) For SPI bus interface (CPOL,CPHA)=(0,0),(1,1)
6) Auto erase and auto end function at data rewrite.
7) Low operating current
At write operation (5V): 0.6mA(Typ.)
At read operation (5V): 1.3mA(Typ.)
At standby operation (5V): 0.1μA(Typ.)
8) Address auto increment function at read operation.
9) Write mistake prevention function
Write prohibition at power on.
Write prohibition by command code (WRDI)
Write mistake prevention function at low voltage.
10) MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 Package.
11) Data at shipment Memory array:FFh.
12) Data Retention : 20 years(Ta≦125℃)
13) Endurance : 300,000 cycles(Ta≦125℃)
●Page Write
Number of pages
32Byte
64Byte
Product number
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
●BR35H□□□ Series
Capacity
Bit Format
Product Name
Supply
Voltage
MSOP8
TSSOP-B8
SOP8
SOP-J8
16Kbit
2K×8
BR35H160-WC
2.5～5.5V
●
●
●
●
32Kbit
4K×8
BR35H320-WC
2.5～5.5V
●
●
●
●
64Kbit
8K×8
BR35H640-WC
2.5～5.5V
-
●
●
●
128Kbit
16Kx8
BR35H128-WC
2.5～5.5V
-
-
●
●
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© 2011 ROHM Co., Ltd. All rights reserved.
1/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Absolute Maximum Ratings (Ta=25℃)
Symbol
Limits
Parameter
Impressed Voltage
Vcc
-0.3 to +6.5
560(SOP8)
560(SOP-J8)
Permissible
Pd
Dissipation
410(TSSOP-B8)
380(MSOP8)
Storage
Tstg
-65 to +150
Temperature Range
Operating
Topr
-40 to +125
Temperature Range
Terminal Voltage
-0.3 toVcc+0.3
●Recommended Operating Conditions
Parameter
Symbol
Limits
Supply Voltage
Vcc
2.5 to 5.5
Input Voltage
Vin
0 to Vcc
Unit
V
*1
*2
*3
*4
Unit
V
mW
℃
℃
V
＊When using at Ta=25℃ or higher, 4.5mW (*1,*2),
3.3mW (*3) , 3.1 mW (*4)to be reduced per 1℃
●Memory Cell Characteristics (Vcc=2.5V to 5.5V)
Limits
Parameter
Unit
Condition
Min.
Typ. Max.
1,000,000
Cycles Ta≦85℃
Endurance*5 500,000
Cycles Ta≦105℃
300,000
Cycles Ta≦125℃
40
Years Ta≦25℃
Data
25
Years Ta≦105℃
*5
Retention
20
Years Ta≦125℃
●Input / Output Capacitance (Ta=25℃, frequency=5MHz)
Parameter
Symbol Conditions Min. Max. Unit
Input
Capacitance *6
Output
Capacitance *6
CIN
VIN=GND
－
8
pF
COUT VOUT=GND －
8
*6:Not 100% TESTED
*5:Not 100% TESTED
●Electrical Characteristics (Unless otherwise specified, Ta=-40 to +125℃, Vcc=2.5 to 5.5V)
Limits
Symbol
Unit
Parameter
Min.
Typ.
Max.
“H” Input Voltage
VIH
0.7xVcc
－
Vcc+0.3
V
2.5V≦Vcc≦5.5V
“L” Input Voltage
VIL
-0.3
－
0.3xVcc
V
2.5V≦Vcc≦5.5V
“L” Output Voltage
VOL
0
－
0.4
V
IOL=2.1mA
“H” Output Voltage
Conditions
VOH
Vcc-0.5
－
Vcc
V
IOH=-0.4mA
Input Leakage Current
ILI
-10
－
10
μA
VIN=0V to Vcc
Output Leakage Current
ILO
-10
－
10
μA
VOUT=0V to Vcc, CSB=Vcc
Vcc=2.5V,fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Wrte, Page Write
Vcc=5.5V,fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Wirte, Page Write
Vcc=2.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V
CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN
2.0 *7
ICC1
－
－
ICC2
－
－
ICC3
－
－
1.5
mA
ICC4
－
－
2.0
mA
ISB
－
－
10
μA
Operating Current
(Write)
Operating Current
(Read)
Standby Current
2.5
*8
3.0
*7
mA
mA
5.5 *8
* This product is not designed for protection against radioactive rays.
*7 BR35H160/320-WC *8 BR35H640/128-WC
●Block Diagram
CSB
VOLTAGE
INSTRUCTION DECODE
DETECTION
CONTROL CLOCK
SCK
GENERATION
SI
WRITE
HIGH VOLTAGE
INHIBITION
GENERATOR
INSTRUCTION
REGISTER
STATUS REGISTER
ADDRESS
REGISTER
11～14bit *9
ADDRESS
DECODER
11～14bit *9
16K～128K
*9 11bit: BR35H160-WC
12bit: BR35H320-WC
13bit: BR35H640-WC
14bit: BR35H128-WC
EEPROM
DATA
SO
REGISTER
8bit
READ/WRITE
AMP
8bit
Fig.1 Block Diagram
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© 2011 ROHM Co., Ltd. All rights reserved.
2/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Pin Assignment and Description
Vcc
NC
SCK
SI
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
CSB
SO
NC
GND
Fig.2 Pin Assignment Diagram
Terminal Name
Vcc
GND
CSB
SCK
SI
SO
NC
Input/Output
–
–
Input
Input
Input
Output
–
Function
Power Supply to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Non connection
●Operating Timing Characteristics
●Sync data input / output timing
(Ta=-40℃ to +125℃, unless otherwise specified, load capacitance CL1=100pF)
Parameter
Symbol
SCK frequency
SCK high time
SCK low time
CSB high time
CSB setup time
CSB hold time
SCK setup time
SCK hold time
SI setup time
SI hold time
fSCK
tSCKWH
tSCKWL
tCS
tCSS
tCSH
tSCKS
tSCKH
tDIS
tDIH
tPD1
Data output delay time1
Data output delay time2
(CL2=30pF)
Output hold time
Output disable time
SCK rise time
SCK fall time
OUTPUT
rise time
OUTPUT
fall time
Write time
＊
*1
2.5≦Vcc≦5.5V
Min. Typ. Max.
5
85
85
85
90
85
90
90
20
30
70
tCS
Unit
CSB
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SCK
tPD2
-
-
55
ns
tOH
tOZ
tRC
tFC
0
-
-
100
1
1
ns
ns
μs
μs
tRO
-
-
50
ns
tFO
-
-
50
ns
tE/W
-
-
5
ms
tCSS
tSCKS
tSCKWL
tSCKWH
tRC
tFC
tDIS tDIH
SI
High-Z
SO
Fig.3 Input timing
Data through SI enters the IC in sync with the data
rise edge of SCK. Please input address and data
starting from the most significant bit MSB.
tCS
tCSH tSCKH
CSB
SCK
SI
tPD
tRO,tFO
tOH
tOZ
SO
High-Z
Fig.4 Input / Output timing
Data through SO is output in sync with the data fall
edge of SCK. Data is output starting from the most
significant bit MSB.
1 NOT 100% TESTED
●AC measurement conditions
Parameter
Symbol
CL1
CL2
-
Load capacitance 1
Load capacitance 2
Input rise time
Input fall time
Input voltage
Input / Output judgment voltage
-
Min.
-
Limits
Typ.
Max.
100
30
50
50
0.2Vcc / 0.8Vcc
0.3Vcc / 0.7Vcc
Unit
pF
pF
ns
ns
V
V
●tOZ measurement condition
IL is the load current that changes the SO voltage to 0.5×Vcc. IL = ±1mA.
After CSB starts to rise, the time needed for SO to change to High-Z is defined with 10% changing point from SO=High or
SO=Low.
0.8Vcc
Signal Input
CSB
Vcc
SO
NC
0.7Vcc
CSB
0.2Vcc
Signal Input
IL=±1mA
NC
SCK
CL1=100pF
GND
SI
High
Signal Input
0.9Vcc
SO
Fig.5
tOZ measurement circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
Fig.6
3/16
0.5Vcc
0.1Vcc
Low
tOZ measurement timing
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
● Characteristic
Data
●Characteristics
Data
(The following characteristic data are Typ. value.)
6
6
Ta=-40℃
Ta=25℃
Ta=125℃
5
5
VOL1[V]
SPEC
3
3
2
2
1
1
0
1
Fig.7
2
3
Vcc[V]
4
"H" input voltage
5
0.2
SPEC
0
2
3
Vcc[V]
4
5
6
0
8
1.0
Ta=-40℃
Ta=25℃
Ta=125℃
0.5
0.0
-1
-0.8
-0.6 -0.4
IOH[mA]
-0.2
6
4
2
2
Fig.10 "H" output voltage VOH1 (Vcc=2.5V)
1
2
3
Vcc[V]
4
5
6
0
SPEC
1.0
0.0
6.0
1
2
3
4
5
2.0
4.0
SPEC
2.0
6
1
2
3
4
5
0
3
Vcc[V]
4
5
6
100
80
tSCKWH [ns]
10
SPEC
1
Ta=-40℃
Ta=25℃
Ta=125℃
2
2
3
Vcc[V]
4
5
Fig.16 Standby Current ISB
1
2
3
Vcc[V]
4
5
0
6
2
Ta=-40℃
Ta=25℃
Ta=125℃
60
40
20
20
5
6
Fig.19 SCK low time tSCKWL
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© 2011 ROHM Co., Ltd. All rights reserved.
6
Ta=-40℃
Ta=25℃
Ta=125℃
60
40
20
0
0
5
80
tCSS[ns]
tCS[ns]
40
4
SPEC
80
Ta=-40℃
Ta=25℃
Ta=125℃
3
Vcc[V]
100
SPEC
80
4
1
Fig.18 SCK high time tSCKWH
100
SPEC
3
Vcc[V]
40
Fig.17 SCK frequency fSCK
100
2
60
0
0
6
Ta=-40℃
Ta=25℃
Ta=125℃
20
0
0
1
2
Fig.15 Operating Current (READ) ICC3,4
Fig.14 Operating Current (WRITE) ICC1,2
( BR35H640/128-WC )
fSCK[MHz]
4
0
1
Vcc[V]
SPEC
6
60
SPEC
1.0
SPEC
8
1
SPEC
1.5
6
100
Ta=-40℃
Ta=25℃
Ta=125℃
0
6
0.0
Vcc[V]
Fig.13 Operating Current (WRITE) ICC1,2
( BR35H160/320-WC )
10
5
0.5
0
12
4
Ta=-40℃
Ta=25℃
Ta=125℃
DATA=00h
SPEC
0.0
0
3
VOUT[V]
Fig.12 Output leak current ILO(SO)
ICC READ [mA]
2.0
SPEC
2
2.5
Ta=-40℃
Ta=25℃
Ta=125℃
DATA=00h
ICC WRITE [mA]
3.0
Ta=-40℃
Ta=25℃
Ta=125℃
1
Fig.11 Input leak current ILI(CSB,SCK,SI)
8.0
DATA=00h
6
0
0
4.0
5
Ta=-40℃
Ta=25℃
Ta=125℃
6
4
0
4
SPEC
8
Ta=-40℃
Ta=25℃
Ta=125℃
0
-1.2
3
IOL[mA]
10
ILO[μA]
ILI[μA]
1.5
2
12
SPEC
10
SPEC
1
Fig.9 "L" output voltage VOL1 (Vcc=2.5V)
12
2.0
ICC WRITE [mA]
1
Fig.8 "L" input voltage VIL(CSB,SCK,SI)
VIH(CSB,SCK,SI)
2.5
ISB[μA]
SPEC
0.4
0
6
3.0
tSCKWL [ns]
0.6
0
0
Ta=-40℃
Ta=25℃
Ta=125℃
0.8
4
VIL[V]
VIH[V]
4
VOH1[V]
1
Ta=-40℃
Ta=25℃
Ta=125℃
0
0
1
2
3
Vcc[V]
4
5
Fig.20 CSB high time tCS
4/16
6
0
1
2
3
Vcc[V]
4
5
6
Fig.21 CSB setup time tCSS
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
● CharacteristicData
Data
●Characteristics
(The following characteristic data are Typ. value.)
100
50
50
SPEC
40
tDIS[ns]
Ta=-40℃
Ta=25℃
Ta=125℃
60
40
30
SPEC
20
0
1
2
3
Vcc[V]
4
5
0
6
100
3
Vcc[V]
4
5
0
6
60
2
3
Vcc[V]
4
5
40
Fig.25 Data output delay time ｔPD1 (CL=100pF)
100
60
0
1
2
3
Vcc[V]
4
5
0
6
8
Ta=-40℃
Ta=25℃
Ta=125℃
80
SPEC
40
20
SPEC
40
1
2
3
Vcc[V]
4
5
6
Fig.28 Output rise time tRO
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© 2011 ROHM Co., Ltd. All rights reserved.
4
5
6
4
2
0
0
0
3
Vcc[V]
SPEC
20
0
2
Ta=-40℃
Ta=25℃
Ta=125℃
6
60
tE/W[ms]
tFO [ns]
60
1
Fig.27 Output disable time tOZ
100
80
6
20
Fig.26 Data utput delay time tPD2
Ta=-40℃
Ta=25℃
Ta=125℃
5
40
0
6
4
Ta=-40℃
Ta=25℃
Ta=125℃
80
SPEC
60
0
1
3
Vcc[V]
SPEC
100
20
0
2
120
Ta=-40℃
Ta=25℃
Ta=125℃
80
SPEC
40
0
1
Fig.24 SI hold time tDIH
tOZ [ns]
Ta=-40℃
Ta=25℃
Ta=125℃
tPD2 [ns]
tPD1 [ns]
2
100
20
tRO [ns]
1
Fig.23 SI setup time tDIS
Fig.22 CSB hold time tCSH
80
20
0
0
0
SPEC
30
10
10
20
Ta=-40℃
Ta=25℃
Ta=125℃
40
tDIH[ns]
80
tCSH[ns]
Ta=-40℃
Ta=25℃
Ta=125℃
0
1
2
3
Vcc[V]
4
5
Fig.29 Output fall time tFO
5/16
6
0
1
2
3
Vcc[V]
4
5
6
Fig.30 Write cycle time tE/W
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Features
○Status registers
This IC has status registers. The status register has 8 bits and expresses the following parameters.
WEN is set by the write enable command and write disable command. WEN goes into the write disable status when the
power source is turned off. The R/B bit is for write confirmation and therefore cannot be set externally.
The status register value can be read by use of the read status command.
●Status registers
Product Number
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
bit
Memory
location
WEN
Register
R/B
Register
bit 7
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
bit 0
0
0
0
0
0
0
WEN
R/B
Function
Write and write status register write enable / disable status confirmation bit
WEN=0=prohibited
WEN=1=permitted
Write cycle status (READY / BUSY) status confirmation bit
R/B=0=READY
R/B=1=BUSY
●Command mode
Command
WREN
WRDI
READ
WRITE
RDSR
Ope code
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
0000
0110
0000
0100
0000
0011
0000
0010
0000
0101
Contents
Write enable
Write disable
Read
Write
Read status register
Write enable command
Write disable command
Read command
Write command
Status register read command
●Timing chart
1. Write enable (WREN) / disable (WRDI) cycle
WREN (WRITE ENABLE): Write enable
CSB
SCK
0
SI
SO
1
0
0
2
0
3
0
4
0
5
6
1
1
7
0
High-Z
Fig.31
Write enable command
WRDI (WRITE DISABLE): Write disable
CSB
SCK
SI
SO
0
0
1
0
2
0
3
0
5
4
0
1
6
0
7
0
High-Z
Fig.32
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© 2011 ROHM Co., Ltd. All rights reserved.
Write disable
6/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
○This IC has a write enable status and a write disable status. Write enable status is achieved by the write enable
command and write disable status is achieved by the write disable command. As for these commands, set CSB to LOW
and then input the respective ope codes. The respective commands are accepted at the 7-th clock rise. The command is
also valid with Inputs over 7 clocks.
In order to perform a write command it is necessary to use the write enable command to set the IC to the write enable
status. If a write command is input during write disable status the command will be cancelled. After a write command is
input during write enable status the IC will return to the write disable status. When turning on the power the IC will be in
write disable status.
2. Read command (READ)
～
～
～
～
CSB
Product
number
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
～
～
0
1
2
3
4
5
6
7
8
9
10
11
23
～
～
SCK
24
30
～
～
0
0
0
0
0
1
*
1
*
A13 A12
A1
A0
～
～
0
～
～
SI
～
～
～
～
～
～
High-Z
SO
D6
D7
D2
D1
D0
Address
Length
A10-A0
A11-A0
A12-A0
A13-A0
＊=Don't Care
Fig.33 Read command (BR35H160/320/640/128-WC)
By use of the read command, the data of the EEPROM can be read. As for this command, set CSB to LOW, then input
the address after the read ope code. EEPROM starts data output of the designated address. Data output is started from
the SCK fall of 23 clock and from D7 to D0 sequentially. The IC features an increment read function. After the output of 1
byte (8bits) of data, by continuing input of SCK the next data addresses can be read. Increment read can read all
addresses of the EEPROM. After reading the data of the most the significant address, by continuing with the increment
read the data of the most insignificant address is read.
3. Write command (WRITE)
1
0
2
3
4
5
6
7
9
8
10
11
～
～
SCK
～ ～
～
～
～
～
CSB
23
24
～
～
～
～
0
0
0
0
1
0
A13
*
*
A12
A1
A0
D7
～
～
0
D6
High-Z
D2
D0
D1
～
～
～
～
SO
0
～
～
SI
31
30
Product
number
BR35H160-WC
BR35H320-WC
Address
Length
A10-A0
A11-A0
BR35H640-WC
BR35H128-WC
A12-A0
A13-A0
＊=Don't Care
Fig.34 Write command (BR35H160/320/640/128-WC)
12
*
23
A1
A0
25
24
D7
D6
31
32
32n-7
33
32n-2
32n-1 32n
D1
D0
D7
D7
D6
D6
D0
～
～
High-Z
30
～
～
0
8
32n-8
～
～
1
7
～
～
0
6
～ ～
～
～
0
5
CSB valid timing
～ ～
～
～
0
4
～ ～
～
～
0
3
～
～
0
2
～
～
SO
0
1
～
～
SI
0
～
～
SCK
～
～
～
～
CSB
Fig.35 N Byte page write command (BR35H160/320/640-WC)
*
23
A1
A0
24
D7
25
D6
30
31
32
64n-7
33
64n-2
64n-1 64n
D1
D0
D7
D6
D7
D6
D0
～
～
High-Z
12
～
～
0
8
64n-8
～
～
1
7
～
～
0
6
～ ～
～
～
0
5
CSB valid timing
～ ～
～
～
0
4
～ ～
～
～
0
3
～
～
0
2
～
～
SO
0
1
～
～
SI
0
～
～
SCK
～
～
～
～
CSB
Fig.36 N Byte page write command (BR35H128-WC)
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7/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
With the write command data can be written to the EEPROM. As for this command, set CSB to LOW, then input address
and data after inputting the write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of
EEPROM requires time of tE/W (Max 5ms). During tE/W, commands other than the status read command are not
accepted. Start CSB after taking the last data (D0) and before the next SCK clock starts. At other timings the write
command will not be executed and will be cancelled. The IC has page write functionality. After input 1 byte (8bits) of data,
*1
by continuing data input without starting CSB, data up to 32/64 bytes can be written in one tE/W. In page write, the
*2
insignificant 5/6 bit of the designated address is incremented internally every time 1 byte of data is input, and data is
written to the respective addresses. When data larger then the maximum bytes is input the address rolls over and
previously input data is overwritten.
Write command is executed when CSB rises between the SCK clock rising edge to recognize the 8th bit’s of data input
and the next SCK rising edge. At other timings the write command is not executed and cancelled (Fig.42 valid timing c).
In page write, the CSB valid timing is every 8 bits. If CSB rises at other timings page write is cancelled together with the
write command and the input data is reset.
This column addresses are
Top address of this page
This column addresses are
*1 BR35H160/320/640-WC = Max 32 Bytes
BR35H128-WC
= Max 64 Bytes
*2 BR35H160/320/640-WC = Lower 5 bits
BR35H128-WC
= Lower 6 bits
Top address of this page
32byte
64byte
page0
000h
001h
002h
･･･
01Eh
01Fh
page 0
0000h
0001h
0002h
･･･
003Eh
003Fh
page 1
020h
021h
022h
･･･
03Eh
03Fh
page 1
0040h
0041h
0042h
･･･
007Eh
007Fh
page 2
・
・
・
040h
・
・
・
041h
・
・
・
042h
・
・
・
･･･
・
・
・
05Eh
・
・
・
05Fh
・
・
・
page 2
・
・
・
0080h
・
・
・
0081h
・
・
・
0082h
・
・
・
･･･
・
・
・
00BEh
・
・
・
00BFh
・
・
・
page m-1
n-63
n-62
n-61
･･･
n-33
page m-1
n-127
n-126
n-125
･･･
n-65
n-64
n-31
n-30
n-29
･･･
n-1
n-63
n-62
n-61
･･･
n-1
page
*4
m
*3 n=8191d=1FFFh: BR35H640-WC
n=4095d=FFFh：BR35H320-WC
n=2047d=7FFh：BR35H160-WC
*4 m=255 : BR35H640-WC
m=127：BR35H320-WC
m=63：BR35H160-WC
n-32
*3
*6
n
page m
*5
n
*5 n=16383d=3FFFh：BR35H128-WC
This column addresses are the
last address of this page
This column addresses are the
*6 m=255：BR35H128-WC
last address of this page
Fig.37 EEPROM physical address for Page write command (32/64Byte)
●Example of Page write command
No.
Addresses of Page0
①
Previous data
②
2 bytes input data
③
After No.②
④
34 byte input data
⑤
After No.④
000h
00h
AAh
AAh
AAh
001h
01h
55h
55h
55h
002h
02h
02h
AAh
････
････
････
････
････
01Eh
1Eh
1Eh
AAh
01Fh
1Fh
1Fh
55h
FFh
00h
-
････
-
-
FFh
00h
AAh
････
AAh
55h
a：In case of input the data of No.② which is 2 bytes page write command for the data of No.①, EEPROM data changes
like No.③.
b：In case of input the data of No.④ which is 34 bytes page write command for the data of No.①, EEPROM data changes
like No.⑤.
c：In case of a or b, when write command is cancelled, EEPROM data keep No.①.
In page write command, when data is set to the last address of a page (e.g. address “03Fh” of page 1), the next data will be
set to the top address of the same page (e.g. address “020h” of page 1). This is why page write address increment is
available in the same page. As a reference, if of 32 bytes, page write command is executed for 2 bytes the data of the other
30 bytes without addresses will not be changed.
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8/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
4.Status register read command
CSB
SCK
SI
SO
1
0
0
0
2
0
3
0
4
5
0
7
6
0
1
9
10
11
12
13
14
15
1
High-Z
Fig.38
8
bit7
bit6
bit5
bit4
bit3
0
0
0
0
0
bit2
bit1
0
WEN R/B
bit0
Status register read command (BR35H160/320/640/128-WC)
The EEPROM status can be read by use of the status register read command. For this command set CSB to Low then
input the ope code of the status register read command followed by the clock input as shown above. The data of status
register will then be read out. This command features increment functionality. When clock input is continued during
CSB=Low, 8 bytes of status register data will be continuously read out. When this command is executed from the start of
write programming to the end of write programming, the end of write programming can be confirmed by checking the
following changes: WEN=Low followed by R/B=Low. After confirming the end of write programming, before inputting the
next command CSB first needs to be High and then put back to Low.
●At standby
○Current at standby
Set CSB “H”, and be sure to set SCK, SI input “L” or “H”. Do not input intermediate electric potantial.
○Timing
As shown in Fig.39, at standby, when SCK is “H”, even if CSB falls, SI status is not read at fall edge. SI status is read at
SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status
Even if CSB is fallen at SCK=SI=”H”,
SI status is not read at that edge.
CSB
Command start here. SI is read.
SCK
0
1
2
SI
Fig.39
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Operating timing
9/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Method to cancel each command
○READ
・Cancellation method: cancel by CSB = “H”
Ope code
8 bits
Address
Data
8 bits/16bits
8 bits
Cancel available in all areas of read mode
Fig.40 READ cancel valid timing
○RDSR
・Cancellation method: cancel by CSB = “H”
Data
Ope code
8 bits
8 bits
Cancel available in all
areas of rdsr mode
Fig.41 RDSR cancel valid timing
○WRITE, PAGE WRITE
a：Ope code, address input area.
Cancellation possible by CSB=”H”
b：Data input area (D7~D1 input area)
Cancellation possible by CSB=”H”
c：Data input area (D0 area)
Write starts after CSB rise.
After CSB rise, cancellation is no longer possible.
d：tE/W area.
Cancellation is possible by CSB = “H”. However, when
write starts (CSB rise) in area c, cancellation is no
longer possible. Also, cancellation is not possible by
continues inputting of SCK clock. In page write
mode, there is a write enable area at every 8 clocks.
Ope code
8bits
Address
Data
16bits
8bits
a
tE/W
b
d
c
SCK
SI
D7
D6
D5
D4
D3
D2
D1
D0
c
b
Fig.42 WRITE cancel valid timing
Note 1) If Vcc is set to OFF during execution of write the data of the designated address is not guaranteed. Please
execute write again.
Note 2) If CSB rises at the same timing as that the SCK rises, write execution / cancel will become unstable.
Therefore, it is recommended to let CSB rise in the SCK = “L” area. As for SCK rise, ensure a timing of tCSS /
tCSH or higher.
○WREN/WRDI
a：From ope code to 7-th clock rise, cancel by CSB = “H”.
b：Cancellation is not possible when CSB rises after the 7-th clock.
6
SCK
7
8
8 bits
a
b
Fig.43 WREN/WRDI cancel valid timing
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10/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●High speed operations
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
○Input pin pull up, pull down resistance
When attaching pull up, pull down resistance to the EEPROM input pin, select an appropriate value for the
microcontroller VOL, IOL from the VIL characteristics of this IC.
○Pull up resistance
Microcontroll
IOLM
RPU
VOLM
･･･①
IOLM
VILE
“L” output
VCC-VOLM
RPU≥
EEPROM
VOLM≤
“L” input
VILE
･･･②
Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA,
from the equation ①,
Fig.44 Pull up resistance
5－0.4
RPU≧
-3
2×10
2.3[kΩ]
∴RPU≧
With the value of Rpu to satisfy the above equation, VOLM
becomes 0.4V or lower, and with VILE (=1.5V), the equation ② is
also satisfied.
・VILE :EEPROM VIL specifications
・VOLM :Microcontroller VOL specifications
・IOLM :Microcontroller IOL specifications
Also, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up.
○Pull down resistance
Microcontroll
EEPROM
VOHM
VIHE
“H” output
IOHM
RPD
RPD≧
VOHM≧
VOHM
IOHM
VIHE
･･･③
･･･④
Example) When VCC=5V, VOHM=VCC-0.5V, IOHM＝0.4mA,
VIHE=VCC×0.7V, from the equation③,
“H” input
Fig.45 Pull down resistance
RPD≧
5－0.5
0.4×10-3
∴RPU≧
11.3[kΩ]
The operations speed changes according to the amplitude VIHE, VILE of the signals input to the EEPROM. More stable
high speed operations can be realized by inputting signals with Vcc / GND levels of amplitude. On the contrary, when
*1
signals with an amplitude of 0.8Vcc / 0.2Vcc are input, operation speed slows down.
In order to realize more stable high speed operation, it is recommended to set the values of RPU, RPD as large as possible,
and to have the amplitude of the signals input to the EEPROM close to the Vcc / GND amplitude level.
*
( 1 In this case, the guaranteed value of operating timing is guaranteed.)
○SO load capacitance condition
The load capacitance of the SO output pin affects the SO output delay characteristic. (Data output delay time, time from
HOLDB to High-Z, output rise time, output fall time.). Make the SO load capacitance small to improve the output delay
characteristic.
EEPROM
SO
CL
Fig.46 SO load dependency of data output delay time tPD
○Other cautions
Make all wires from the microcontroller to EEPROM input pin the same length. This in order to prevent setup / hold
violation to the EEPROM.
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11/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Equivalent circuit
○Output circuit
SO
OEint.
Fig.47 SO output equivalent circuit
○Input circuit
RESETint.
CSB
Fig.48 CSB input equivalent circuit
SCK
SI
Fig.49 SCK input equivalent circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
Fig.50 SI input equivalent circuit
12/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Notes on power ON/OFF
○At power ON/OFF set CSB=”H” (=Vcc).
When CSB is “L”, the IC goes into input accept status (active). If power is turned on in this status noises, etc. may cause
malfunction or erroneous write. To prevent this, set CSB to “H” at power ON. (When CSB is in “H” status, all inputs are
canceled.)
Vcc
Vcc
CSB
GND
Good
example
Bad
example
CSB timing at power ON/OFF
Fig.51
(Good example) CSB terminal is pulled up to Vcc.
After turning power off allow for 10ms or more before turning power on again. If power is turned on without observing
this condition, the IC internal circuit may not be reset.
(Bad example) CSB terminal is “L” at power ON/OFF.
In this case, CSB always becomes “L” (active status), and the EEPROM may malfunction or perform an erroneous
write due to noises, etc.
This can even occur when CSB input is High-Z.
○LVCC circuit
LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power and prevents erroneous write.
At LVCC voltage (Typ. =1.9V) or below, it prevents data rewrite.
○P.O.R. circuit
This IC has a POR (Power On Reset) circuit as countermeasure against erroneous write. After the POR operation is
performed, write disable status is entered. The POR circuit is only valid when power is ON and does not work when
power is OFF. When power is ON and the following recommended tR, tOFF, Vbot conditions are not satisfied, write
enable status might be entered due to noise etc.
tR
Vcc
tR
tOFF
0
Vbot
Recommended conditions for tR, tOFF, Vbot
tOFF
Vbot
10ms or below
10ms or higher
0.3V or below
100ms or below
10ms or higher
0.2V or below
Fig.52 Rise waveform
●Noise countermeasures
○Vcc noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur. To prevent this, it is recommended to attach a
bypass capacitor (0.1μF) between IC Vcc and GND, as close to IC as possible.
It is also recommended to attach a bypass capacitor between the board Vcc and GND.
○SCK noise
When the rise time of SCK (tRC) is long and a there is a certain degree of noise, malfunction may occur due to clock bit
displacement. To avoid this, a Schmitt trigger circuit is built in the SCK input. The hysteresis width of this circuit is set to
about 0.2V. If noises exist at the SCK input set the noise amplitude to 0.2Vp-p or below. Also, it is recommended to set
the rise time of SCK (tRC) to 100ns or below. In case the rise time is 100ns or higher, sufficient noise countermeasures
are needed. Clock rise, fall time should be as small as possible.
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13/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Notes for use
(1) Described numeric values and data are design representative values and not guaranteed.
(2) We believe that the application circuit examples are recommendable. However, in actual use, please sufficiently further
characteristics. When changing the fixed number of external parts, make your decision with sufficient margin, in
consideration of static characteristics, transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage, operating temperature range, etc. are exceeded, the LSI
might be damaged. Please do not impress voltage or temperature exceeding the absolute maximum ratings. In case of
fear of exceeding the absolute maximum ratings please take physical safety countermeasures such as fuses and see
to it that conditions exceeding the absolute maximum ratings are impressed to LSI.
(4) GND electric potential
Set the voltage of the GND terminal as low as possible with all action conditions. Ensure that that all terminal voltages
are higher than that of the GND terminal.
(5) Heat design
In consideration of permissible dissipation in actual use condition, please carry out the heat design with sufficient
margin.
(6) Inter-terminal short circuit and wrong packaging
When packaging the LSI onto a board, pay sufficient attention to the LSI direction and displacement. Wrong packaging
may damage LSI. Short circuit between LSI terminals, terminals and power source, terminal and GND due to foreign
matters may also result in LSI damage.
(7) Use in strong electromagnetic fields may cause malfunction. Therefore, please evaluate the design sufficiently.
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14/16
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Ordering part number
B
3
R
Rohm type
5
H
1
6
0
Double cell
Package
FVM : MSOP8
FVT : TSSOP-B8
F
: SOP8
FJ : SOP-J8
Capacity
Operating
160=16K
temperature
H:-40℃ to +125℃ 320=32K
640=64K
128=128K
BUS type
35: SPI
W
F
C
E
2
Packaging and forming
specification
E2：Embossed tape and reel
TR：Embossed tape and reel
(MSOP8 package only)
●Package specifications
SOP8
<Tape and Reel information>
5.0±0.2
(MAX 5.35 include BURR)
7
+6°
4° −4°
5
6.2±0.3
4.4±0.2
0.3MIN
6
1 2
3
0.9±0.15
8
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
4
0.595
1.5±0.1
+0.1
0.17 -0.05
S
S
0.11
0.1
1.27
1pin
0.42±0.1
Reel
(Unit : mm)
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
SOP-J8
<Tape and Reel information>
4.9±0.2
(MAX 5.25 include BURR)
+6°
4° −4°
6
5
0.45MIN
7
3.9±0.2
6.0±0.3
8
1
2
3
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
4
0.545
0.2±0.1
1.375±0.1
S
0.175
1.27
0.42±0.1
0.1 S
1pin
Reel
(Unit : mm)
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
TSSOP-B8
<Tape and Reel information>
3.0 ± 0.1
(MAX 3.35 include BURR)
8
7
6
4±4
3000pcs
2
0.525
3
4
1PIN MARK
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1.0±0.2
0.5±0.15
6.4±0.2
4.4±0.1
+0.05
0.145 −0.03
S
0.1±0.05
1.2MAX
Embossed carrier tape
Quantity
Direction
of feed
1
1.0±0.05
Tape
5
0.08 S
+0.05
0.245 −0.04
0.08
M
1pin
0.65
Reel
(Unit : mm)
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15/16
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2011.03 - Rev.C
Technical Note
BR35H□□□-WC Series
●Package specifications (Continue)
MSOP8
<Tape and Reel information>
2.8±0.1
4.0±0.2
8 7 6 5
0.6±0.2
+6°
4° −4°
0.29±0.15
2.9±0.1
(MAX 3.25 include BURR)
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1 2 3 4
1PIN MARK
1pin
+0.05
0.145 −0.03
0.475
0.08±0.05
0.75±0.05
0.9MAX
S
+0.05
0.22 −0.04
0.08 S
Direction of feed
0.65
Reel
(Unit : mm)
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16/16
∗ Order quantity needs to be multiple of the minimum quantity.
2011.03 - Rev.C
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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R1120A