eupec BSM50GB60DLC Igbt-module Datasheet

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
VCES
600
V
Tc= 80°C
IC,nom.
50
A
Tc= 25°C
IC
75
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP= 1ms, Tc= 80°C
ICRM
100
A
Gesamt-Verlustleistung
total power dissipation
Tc= 25°C, Transistor
Ptot
280
W
VGES
+/- 20V
V
IF
50
A
IFRM
100
A
I2t
450
A2s
VISOL
2,5
kV
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP= 1ms
Grenzlastintegral der Diode
2
I t - value, Diode
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
1,95
2,45
V
-
2,20
-
V
VGE(th)
4,5
5,5
6,5
V
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC= 50A, VGE= 15V, Tvj= 25°C
IC= 50A, VGE= 15V, Tvj= 125°C
VCE sat
Gate-Schwellenspannung
gate threshold voltage
IC= 1,0mA, VCE= VGE, Tvj= 25°C
Eingangskapazität
input capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Cies
-
2,2
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Cres
-
0,2
-
nF
-
1
500
µA
-
1
-
mA
-
-
400
nA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE= 600V, VGE= 0V, Tvj= 25°C
VCE= 600V, VGE= 0V, Tvj= 125°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE= 0V, VGE= 20V, Tvj= 25°C
prepared by: Andreas Vetter
date of publication: 2000-04-26
approved by: Michael Hornkamp
revision: 1
1 (8)
ICES
IGES
BSM 50 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
40
-
ns
-
42
-
ns
-
9
-
ns
-
10
-
ns
-
120
-
ns
-
130
-
ns
-
12
-
ns
-
21
-
ns
Eon
-
0,5
-
mJ
Eoff
-
1,0
-
mJ
ISC
-
225
-
A
LσCE
-
40
-
nH
RCC'+EE'
-
1,2
-
mΩ
min.
typ.
max.
-
1,25
1,6
V
-
1,20
-
V
-
88
-
A
-
92
-
A
-
3,4
-
µC
-
5,6
-
µC
-
-
-
mJ
-
1,5
-
mJ
Transistor / Transistor
IC= 50A, VCC= 300V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE= ±15V, RG= 2,7Ω, Tvj= 25°C
td,on
VGE= ±15V, RG= 2,7Ω, Tvj= 125°C
IC= 50A, VCC= 300V
Anstiegszeit (induktive Last)
rise time (inductive load)
VGE= ±15V, RG= 2,7Ω, Tvj= 25°C
tr
VGE= ±15V, RG= 2,7Ω, Tvj= 125°C
IC= 50A, VCC= 300V
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
VGE= ±15V, RG= 2,7Ω, Tvj= 25°C
td,off
VGE= ±15V, RG= 2,7Ω, Tvj= 125°C
IC= 50A, VCC= 300V
Fallzeit (induktive Last)
fall time (inductive load)
VGE= ±15V, RG= 2,7Ω, Tvj= 25°C
tf
VGE= ±15V, RG= 2,7Ω, Tvj= 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IC= 50A, VCC= 300V, VGE= 15V
RG= 2,7Ω, Tvj= 125°C, Lσ = 35nH
IC= 50A, VCC= 300V, VGE= 15V
RG= 2,7Ω, Tvj= 125°C, Lσ = 35nH
tP ≤ 10µsec, VGE ≤ 15V
Tvj≤125°C, VCC=360V, VCEmax= VCES -LσCE ·di/dt
Modulinduktivität
stray inductance module
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
Tc= 25°C
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF= 50A, VGE= 0V, Tvj= 25°C
IF= 50A, VGE= 0V, Tvj= 125°C
VF
IF= 50A, -diF/dt= 2900A/µsec
Rückstromspitze
peak reverse recovery current
VR= 300V, VGE= -10V, Tvj= 25°C
IRM
VR= 300V, VGE= -10V, Tvj= 125°C
IF= 50A, -diF/dt= 2900A/µsec
Sperrverzögerungsladung
recoverred charge
VR= 300V, VGE= -10V, Tvj= 25°C
Qr
VR= 300V, VGE= -10V, Tvj= 125°C
IF= 50A, -diF/dt= 2900A/µsec
Abschaltenergie pro Puls
reverse recovery energy
VR= 300V, VGE= -10V, Tvj= 25°C
VR= 300V, VGE= -10V, Tvj= 125°C
2 (8)
Erec
BSM 50 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
-
-
0,44
K/W
-
-
0,80
K/W
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
Diode / diode, DC
RthJC
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
λPaste= 1W/m*K / λgrease= 1W/m*K
RthCK
-
0,03
-
K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj
-
-
150
°C
Betriebstemperatur
operation temperature
Top
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al2O3
Kriechstrecke
creepage insulation
15
mm
Luftstrecke
clearance
8,5
mm
CTI
comperative tracking index
275
Anzugsdrehmoment für mech. Befestigung
mounting torque
Schraube M6
screw M6
5
M1
-15
Gewicht
weight
G
Nm
+15
%
180
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
3 (8)
BSM 50 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Ausgangskennlinie (typisch)
Output characteristic (typical)
I C= f (VCE)
VGE= 15V
100
90
Tvj = 25°C
80
Tvj = 125°C
IC [A]
70
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
I C= f (VCE)
Tvj= 125°C
100
90
VGE = 8V
80
VGE = 9V
VGE = 10V
IC [A]
70
VGE = 12V
VGE = 15V
60
VGE = 20V
50
40
30
20
10
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VCE [V]
4 (8)
BSM 50 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
I C= f (VGE)
VCE= 20V
100
90
Tvj = 25°C
80
Tvj = 125°C
IC [A]
70
60
50
40
30
20
10
0
5
6
7
8
9
10
11
12
13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
I F= f (VF)
100
90
Tvj = 25°C
Tvj = 125°C
80
IF [A]
70
60
50
40
30
20
10
0
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
VF [V]
5 (8)
BSM 50 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Schaltverluste (typisch)
Switching losses (typical)
E on= f (IC), Eoff= f (IC), Erec= f (IC)
RG,on= 2,7Ω,
Ω,=
Ω , VCC= 300V, Tvj= 125°C
Ω, =RG,off = 2,7Ω
2,5
Eon
Eoff
E [mJ]
2,0
Erec
1,5
1,0
0,5
0,0
0
20
40
60
80
100
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
E on= f (RG), Eoff= f (RG), Erec= f (RG)
IC= 50A , VCC= 300V , Tvj = 125°C
2,5
E [mJ]
2,0
1,5
1,0
0,5
Eon
Eoff
Erec
0,0
0
5
10
15
20
RG [Ω
Ω]
6 (8)
BSM 50 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Transienter Wärmewiderstand
Transient thermal impedance
Z thJC = f (t)
1
ZthJC
[K / W]
0,1
Zth:IGBT
Zth:Diode
0,01
0,001
0,001
0,01
0,1
1
10
t [sec]
i
ri [K/kW]
τi [sec]
ri [K/kW]
τi [sec]
: IGBT
1
18,6
2
230,6
3
155,1
4
35,7
: IGBT
0,0018
0,0240
0,0651
0,6626
: Diode
281,9
270,4
169,8
77,9
: Diode
0,0487
0,0169
0,1069
0,9115
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
VGE= +15V, R G,off = 2,7Ω,
Ω, Tvj= 125°C
120
100
80
IC [A]
60
IC,Modul
40
IC,Chip
20
0
0
100
200
300
400
500
600
700
VCE [V]
7 (8)
BSM 50 GB 60 DLC
2000-02-08
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 50 GB 60 DLC
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
13
M5
10
6
1
17
7
3
23
23
6
6
2
2,8 x 0,5
80
94
17
5
4
6
7
1
3
5
2
4
8 (8)
BSM 50 GB 60 DLC
2000-02-08
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