ETL GSMBZ5240B Zener diode Datasheet

ISSUED DATE :2004/11/15
REVISED DATE :
GSMBZ5221B~GSMBZ5270B
Description
ZENER DIODES
Package Dimensions
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
A
A1
A2
D
E
HE
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
Ta=25 , Derate above 25
Total Device Dissipation
Alumina Substrate**TA=25 , Derate above 25
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR-5 - 1.0 0.75 0.062 in. **Alumina-0.4 0.3
Symbol
PD
PD
R JA
Tj,Tstg
18A
Test
Current
IZT(mA)
20
Min
2.280
GSMBZ5222B
18B
20
2.375
2.5
GSMBZ5223B
18C
20
2.565
2.7
GSMBZ5224B
18D
20
2.660
GSMBZ5225B
18E
20
GSMBZ5226B
8A
20
Marking
Code
GSMBZ5221B
Unit
225
1.8
300
2.4
417
-55 to +150
mW
mW/
mW
mW/
/W
0.024 in. 99.5% alumina.
Thermal Characteristics (VF=0.9V Max @ IF=10mA for all types.)
Device
Max
Zener Voltage
Vz(V)
Nominal
Max
2.4
2.520
ZZK
IZ=0.25mA
Max
1200
ZZT
IZ=IZT
Max
30
Max. Reverse
Current
IR(uA)
@VR(V)
100
1.0
2.625
1250
30
100
1.0
2.835
1300
30
75
1.0
2.8
2.940
1400
30
75
1.0
2.850
3.0
3.150
1600
29
50
1.0
3.135
3.3
3.465
1600
28
25
1.0
GSMBZ5227B
8B
20
3.420
3.6
3.780
1700
24
15
1.0
GSMBZ5228B
8C
20
3.705
3.9
4.095
1900
23
10
1.0
GSMBZ5229B
8D
20
4.085
4.3
4.515
2000
22
5.0
1.0
GSMBZ5230B
8E
20
4.465
4.7
4.935
1900
19
5.0
2.0
GSMBZ5231B
8F
20
4.845
5.1
5.355
1600
17
5.0
2.0
GSMBZ5232B
8G
20
5.320
5.6
5.880
1600
17
5.0
3.0
GSMBZ5233B
8H
20
5.700
6.0
6.300
1600
7.0
5.0
3.5
GSMBZ5234B
8J
20
5.890
6.2
6.510
1000
7.0
5.0
4.0
GSMBZ5235B
8K
20
6.460
6.8
7.140
750
5.0
3.0
5.0
GSMBZ5236B
8L
20
7.125
7.5
7.875
500
6.0
3.0
6.0
GSMBZ5237B
8M
20
7.790
8.2
8.610
500
8.0
3.0
6.5
GSMBZ5238B
8N
20
8.265
8.7
9.135
600
8.0
3.0
6.5
GSMBZ5239B
8P
20
8.645
9.1
9.555
600
10
3.0
7.0
GSMBZ5240B
8Q
20
9.500
10
10.500
600
17
3.0
8.0
1/9
ISSUED DATE :2004/11/15
REVISED DATE :
Test
Current
IZT(mA)
20
Zener Voltage
Vz(V)
Nominal
Max
11
11.550
ZZK
IZ=0.25mA
Max
600
ZZT
IZ=IZT
Max
22
12.600
600
30
1.0
9.1
13.650
600
13
0.5
9.9
14
14.700
600
15
0.1
10
15
15.750
600
16
0.1
11
15.200
16
16.800
600
17
0.1
12
7.4
16.150
17
17.850
600
19
0.1
13
7.0
17.100
18
18.900
600
21
0.1
14
Device
Marking
Code
GSMBZ5241B
8R
GSMBZ5242B
8S
20
11.400
12
GSMBZ5243B
8T
9.5
12.350
13
GSMBZ5244B
8U
9.0
13.300
GSMBZ5245B
8V
8.5
14.250
GSMBZ5246B
8W
7.8
GSMBZ5247B
8X
GSMBZ5248B
8Y
Min
10.450
Max. Reverse
Current
IR(uA)
@VR(V)
2.0
8.4
GSMBZ5249B
8Z
6.6
18.050
19
19.950
600
23
0.1
14
GSMBZ5250B
81A
6.2
19.000
20
21.000
600
25
0.1
15
GSMBZ5251B
81B
5.6
20.900
22
23.100
600
29
0.1
17
GSMBZ5252B
81C
5.2
22.800
24
25.200
600
33
0.1
18
GSMBZ5253B
81D
5.0
23.750
25
26.250
600
35
0.1
19
GSMBZ5254B
81E
4.6
25.650
27
28.350
600
41
0.1
21
GSMBZ5255B
81F
4.5
26.600
28
29.400
600
44
0.1
21
GSMBZ5256B
81G
4.2
28.500
30
31.500
600
49
0.1
23
GSMBZ5257B
81H
3.8
31.350
33
34.650
700
58
0.1
25
GSMBZ5258B
81J
3.4
34.200
36
37.800
700
70
0.1
27
GSMBZ5259B
81K
3.2
37.050
39
40.950
800
80
0.1
30
GSMBZ5260B
81L
3.0
40.850
43
45.150
900
93
0.1
33
GSMBZ5261B
81M
2.7
44.650
47
49.350
1000
105
0.1
36
GSMBZ5262B
81N
2.5
48.450
51
53.550
1100
125
0.1
39
GSMBZ5263B
81P
2.2
53.200
56
58.800
1300
150
0.1
43
GSMBZ5264B
81Q
2.1
57.000
60
63.000
1400
170
0.1
46
GSMBZ5265B
81R
2.0
58.900
62
65.100
1400
185
0.1
47
GSMBZ5266B
81S
1.8
64.600
68
71.400
1600
230
0.1
52
GSMBZ5267B
81T
1.7
71.250
75
78.750
1700
270
0.1
56
GSMBZ5268B
81U
1.5
77.900
82
86.100
2000
330
0.1
62
GSMBZ5269B
81V
1.4
82.650
87
91.350
2200
370
0.1
68
GSMBZ5270B
81W
1.4
86.450
91
95.550
2300
400
0.1
69
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ISSUED DATE :2004/11/15
REVISED DATE :
Characteristics Curve
3/9
ISSUED DATE :2004/11/15
REVISED DATE :
4/9
ISSUED DATE :2004/11/15
REVISED DATE :
5/9
ISSUED DATE :2004/11/15
REVISED DATE :
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ISSUED DATE :2004/11/15
REVISED DATE :
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ISSUED DATE :2004/11/15
REVISED DATE :
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ISSUED DATE :2004/11/15
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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