Ordering number : ENN6793 CPH5504 NPN Epitaxial Planar Silicon Transistor CPH5504 High-Current Switching Applications Package Dimensions DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2162 • 0.15 3 1.6 0.6 Composite type with 2 NPN transistors in one package facilitating high-density mounting. The CPH5504 is composed of 2 chips each equivaient to the CPH3205. Ultrasmall-sized package facilitates miniaturization in end products. (mounting height : 0.9mm) 4 0.05 1 2 0.95 0.4 1 : Collector(TR1) 2 : Collector(TR2) 3 : Base(TR2) 4 : Emitter Common 5 : Base(TR1) Specifications 0.9 0.7 0.2 • 5 0.6 • [CPH5504] 2.9 Features 0.2 • 2.8 Applications 0.4 SANYO : CPH5 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC PT Tj Tstg Conditions Ratings 80 80 50 6 3 6 600 0.9 1.2 150 -55 to +15 Mounted on a ceramic board (600mm2✕0.8mm) Mounted on a ceramic board (600mm2✕0.8mm) Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=3A VCE=10V, IC=500mA VCB=10V, f=1MHz Ratings min typ max 1 1 560 200 70 380 13 Unit µA µA MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21401 TS IM TA-2946 GI IM No.6793-1/4 CPH5504 Continued from preceding page. Parameter Symbol VCE(sat) VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Ratings Conditions min IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit typ 80 140 0.88 Unit max 120 210 1.2 mV mV V V V V V ns ns ns 80 80 50 6 35 300 22 Marking : ED Switching Time Test Circuit PW=20µs D.C.≤1% Electrical Connection B1 IB1 IB2 B2 OUTPUT INPUT RB RL VR 50Ω EC + + 100µF 470µF C1 C2 VBE= –5V VCC=25V 10IB1= –10IB2= IC= 1A IC -- VCE 4.0 60mA 3.5 40mA 2.5 3.0 2.5 20mA 2.0 10mA 1.5 5.0mA 1.0 2.0 Ta=75°C 25°C --25°C Collector Current, IC -- A VCE=2V 80mA A 100m 4.5 IC -- VBE 3.0 Collector Current, IC -- A 5.0 1.5 1.0 0.5 0.5 IB=0 0 0 0.4 0.8 1.2 1.6 0 Collector-to-Emitter Voltage, VCE -- V DC Current Gain, hFE Ta=75°C 3 2 --25°C 25°C 100 7 5 3 2 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT02466 0.6 0.8 1.0 IT02465 f T -- IC 1000 Gain Bandwidth Product, f T -- MHz 5 0.4 Base-to-Emitter Voltage, VBE -- V VCE=2V 7 0.2 IT02464 hFE -- IC 1000 10 0.01 0 2.0 VCE=10V 7 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT02467 No.6793-2/4 CPH5504 Cob -- VCB 100 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 Output Capacitance, Cob -- pF VCE(sat) -- IC 1000 f=1MHz 5 3 2 10 7 5 5 3 2 °C 100 75 = Ta 7 °C 25 ° 25 5 C -- 3 2 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 2 °C 5 =7 Ta 5 C °C 25° --25 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A Collector Current, IC -- A s 0µ 0m op s er 3 2 ms s 0µ DC 10 50 10 1.0 7 5 ati on 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) 1unit 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 3 7 1.0 2 3 5 IT02469 2 1000 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 IT02471 PC -- Ta 1.2 10 s 5 3 1.4 1m IC=3A 3 Collector Current, IC -- A ICP=6A 3 2 2 IC / IB=50 IT02470 ASO 10 7 5 7 0.1 VBE(sat) -- IC 100 0.01 5 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 7 5 5 5 100 3 Collector Current, IC -- A IC / IB=50 7 2 IT02468 VCE(sat) -- IC 1000 1.0 To t 0.9 al 0.8 nit 0.6 Di ss 1u ip ati on 0.4 0.2 Mounted on a ceramic board(600mm2✕0.8mm) 0 5 7 IT02472 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02473 PC(TR2) -- PC(TR1) 1.0 Collector Dissipation, PC(TR2) -- W 10 0.01 5 7 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Mounted on a ceramic board(600mm2✕0.8mm) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Dissipation, PC(TR1) -- W 0.9 1.0 IT02474 No.6793-3/4 CPH5504 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS No.6793-4/4