GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. VCES VCE(sat) IC70 IC(PK)80 IC25 KEY PARAMETERS 1800V (typ) 2.6V (max) 400A (max) 800A (max) 600A Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 4 2 5 1 3 The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters. FEATURES ■ n - Channel ■ Enhancement Mode Module outline type code: L (See package details for further information) Fig.1 Electrical connections - (not to scale) ■ High Input Impedance ■ Optimised For High Power High Frequency Operation 2(E) ■ Isolated Base ■ Ultra Low VCE(sat) 5(E1) ■ 400A Per Module 3(G1) APPLICATIONS ■ High Power Switching 1(C) 4(C1) Fig.2 Single switch circuit diagram ■ Motor Control ORDERING INFORMATION ■ Inverters Order As: GP401LSS18 ■ Traction Systems Note: When ordering, please use the complete part number. ■ Lower Loss Systems Retrofits Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11 GP401LSS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tcase = 25˚C unless stated otherwise. Symbol VCES Collector-emitter voltage VGES Gate-emitter voltage IC IC(PK) Test Conditions Parameter VGE = 0V - Max. Units 1800 V ±20 V Continuous collector current DC, Tcase = 25˚C 600 A Peak collector current DC, Tcase = 70˚C 400 A 1ms, Tcase = 80˚C (Transistor) 800 A Pmax Max. power dissipation Tcase = 25˚C (Transistor) 2980 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units THERMAL AND MECHANICAL RATINGS Test Conditions Parameter Symbol Rth(j-c) Thermal resistance - transistor (per arm) DC junction to case - 42 ˚C/kW Rth(j-c) Thermal resistance - diode (per arm) DC junction to case - 80 ˚C/kW Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm - 15 ˚C/kW Transistor - 125 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm (with mounting grease) Tj Tstg - Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/11 GP401LSS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 10 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±2 µA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 4 - 7.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 400A - 2.6 3.2 V VGE = 15V, IC = 400A, , Tcase = 125˚C - 3.3 4.0 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC, Tcase = 55˚C - - 400 A IFM Diode maximum forward current tp = 1ms, Tcase = 80˚C - - 800 A VF Diode forward voltage IF = 400A - 2.2 2.5 V IF = 400A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF - 15 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11 GP401LSS18 ELECTRICAL CHARACTERISTICS For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units IC = 400A - 900 1100 ns Fall time VGE = ±15V - 280 350 ns EOFF Turn-off energy loss VCE = 900V - 150 200 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.3Ω - 500 650 ns L ~ 100nH - 200 400 ns - 140 180 mJ - 65 85 µC Min. Typ. Max. Units IC = 400A - 1010 1200 ns Fall time VGE = ±15V - 390 500 ns EOFF Turn-off energy loss VCE = 900V - 180 230 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.3Ω - 660 800 ns L ~ 100nH - 310 400 ns - 210 260 mJ - 90 115 µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 50% VCES, dIF/dt = 2500A/µs Tcase = 25˚C unless stated otherwise. Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 50% VCES, dIF/dt = 2500A/µs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4/11 GP401LSS18 SWITCHING DEFINITIONS +15V Vge 10% 0V -15V t4 + 5µs Eon = ∫V .I dt ce c IC 90% t1 td(on) = t2 - t1 10% tr = t3 - t2 Vce t1 t2 t4 t3 Fig.3 Definition of turn-on switching times +15V 90% 0V Vge -15V t7 + 20µs Eoff = ∫V .I dt ce c t5 90% td(off) = t6 - t5 IC 10% tf = t7 - t6 Vce t5 t6 t7 Fig.4 Definition of turn-off switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11 GP401LSS18 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 800 800 Common emitter Tcase = 25˚C 700 700 600 Collector current, Ic - (A) Collector current, Ic - (A) 600 500 400 300 500 400 300 200 200 100 100 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig.5 Typical output characteristics 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 Fig.6 Typical output characteristics 500 400 350 Common emitter Tcase = 125˚C Tcase = 25˚C VGE = ±15V VCE = 900V 450 Tcase = 125˚C VGE = ±15V VCE = 900V 400 Turn-on energy, EON - (mJ) Turn-on energy, EON - (mJ) 300 250 A 200 B 150 C 350 A 300 250 B 200 C 150 100 100 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.3Ω 50 0 0 50 100 150 200 250 300 Collector current, IC - (A) 350 Fig.7 Typical turn-on energy vs collector current 400 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.3Ω 50 0 0 50 100 150 200 250 300 Collector current, IC - (A) Fig.8 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/11 350 400 GP401LSS18 250 200 175 Tcase = 25˚C VGE = ±15V VCE = 900V A 225 Turn-off energy, EOFF - (mJ) Turn-off energy, EOFF - (mJ) C 125 100 75 50 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.3Ω C 175 150 125 100 75 50 100 150 250 300 200 Collector current, IC - (A) 350 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.3Ω 25 0 0 400 50 60 400 td(off) Switching times, ts - (ns) 40 Tcase = 25˚C 30 20 10 Tcase = 125˚C VGE = ±15V VCE = 900V Rg = 4.3Ω 800 td(on) 600 tf 400 200 0 100 350 1000 Tcase = 125˚C 50 200 150 250 300 Collector current, IC - (A) 1200 VGE = ±15V VCE = 900V Rg = 4.3Ω 0 100 Fig.10 Typical turn-off energy vs collector current Fig.9 Typical turn-off energy vs collector current Diode turn-off energy, Eoff(diode) - (mJ) B 50 25 50 A 200 B 150 0 0 Tcase = 125˚C VGE = ±15V VCE = 900V 150 200 250 300 350 400 Collector current, IT - (A) Fig.11 Typical diode reverse recovery charge vs collector current 0 0 tr 50 100 150 200 250 300 Collector current, IC - (A) 350 400 Fig.12 Typical switching characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11 GP401LSS18 1000 800 900 700 Tj = 25˚C 800 700 Collector current, IC - (A) Foward current, IF - (A) 600 500 Tj = 125˚C 400 300 600 500 400 300 200 200 100 100 Tcase = 125˚C Vge = ±15V Rg(min) = 4.3Ω Rg(min) : Minimum recommended value 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 0 0 3.5 Fig.14 Reverse bias safe operating area Fig.13 Diode typical forward characteristics 10000 IC max. (single pulse) m .D ax C 50µs tin on (c 100µs us uo Collector current, IC - (A) IC 100 ) 10 tp = 1ms Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 1000 Diode Transistor 10 1 0.1 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig.15 Forward bias safe operating area 10000 1 10 100 Pulse width, tp - (ms) 1000 Fig.16 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/11 2000 1200 400 800 1600 Collector-emitter voltage, Vce - (V) 10000 GP401LSS18 700 900 PWM Sine Wave Power Factor = 0.9, Modulation Index =1 600 700 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 800 600 500 400 300 500 400 300 200 200 Conditions: Tj = 125˚C, Tcase = 75˚C Rg = 4.3Ω, VCC = 900V 100 100 0 1 10 fmax - (kHz) Fig.17 3-Phase inverter operating frequency 20 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.18 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11 GP401LSS18 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 46.5 46.5 3.5x6 4x Ø6.5 27 6x5.5 16 4 1 20 61.4 48 40 5 2 3 20 24 29 2x M6 23 36max 3x M4 5 106.4 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M4): 2Nm (17lbs.ins) Module outline type code: L ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with concept gate drivers AN5190 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/11 GP401LSS18 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER IC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5288-1.3 Issue No. 1.3 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11