Freescale MRF8S18210WHS Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S18210WHS
Rev. 0, 4/2012
RF Power Field Effect Transistors
MRF8S18210WHSR3
MRF8S18210WGHSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz
to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ =
1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
17.8
29.2
7.0
--34.2
1960 MHz
17.8
28.2
7.0
--34.4
1995 MHz
18.1
27.6
7.1
--34.3
1805 MHz -- 1995 MHz
50 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW
1800 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ =
1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
18.2
30.1
7.3
--35.1
1840 MHz
18.1
29.1
7.4
--35.4
1880 MHz
18.2
27.8
7.4
--35.9
NI--880XS--2
MRF8S18210WHSR3
NI--880XS--2 GULL
MRF8S18210WGHSR3
Features
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
RFin/VGS 2
1 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
239
1.44
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 81°C, 50 W CW, 30 Vdc, IDQ = 1300 mA, 1840 MHz
Case Temperature 101°C, 210 W CW(3), 30 Vdc, IDQ = 1300 mA, 1840 MHz
RθJC
Unit
°C/W
0.48
0.44
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 306 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDD = 30 Vdc, ID = 1300 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.06 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1300 mA, Pout = 50 W Avg., f = 1930 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
17.0
17.8
20.0
dB
Drain Efficiency
ηD
26.0
29.2
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
6.7
7.0
—
dB
ACPR
—
--34.2
--30.0
dBc
IRL
—
--9
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1300 mA, Pout = 50 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz
17.8
29.2
7.0
--34.2
--9
1960 MHz
17.8
28.2
7.0
--34.4
--9
1995 MHz
18.1
27.6
7.1
--34.3
--13
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Part internally matched both on input and output.
5. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRF8S18210WHSR3 MRF8S18210WGHSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1300 mA, 1930 MHz -- 1995 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
210
—
—
12
—
W
IMD Symmetry @ 80 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
100
—
MHz
Gain Flatness in 65 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.14
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.02
—
dB/°C
∆P1dB
—
0.008
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (1)
MHz
Typical Broadband Performance — 1800 MHz (In Freescale 1800 MHz Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1300 mA, Pout =
50 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
18.2
30.1
7.3
--35.1
--10
1840 MHz
18.1
29.1
7.4
--35.4
--9
1880 MHz
18.2
27.8
7.4
--35.9
--10
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C22
C3
C7
C5
C13*
C11*
R1
C9
C1
C15*
C21*
C20*
C17
R2
C2
CUT OUT AREA
C16
C18*
C19*
C12*
C10
C14*
C6
C4
C8
MRF8S18210HS/B
Rev. 0
*C11, C12, C13, C14, C15, C18, C19, C20, and C21 are mounted vertically.
Figure 2. MRF8S18210WHSR3(WGHSR3) Test Circuit Component Layout
Table 5. MRF8S18210WHSR3(WGHSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
2.2 μF Chip Capacitors
C3225X7R2A225M
TDK
C3, C4, C5, C6, C7, C8
10 μF Chip Capacitors
C5750X7S2A106MT
TDK
C9, C10, C11, C12, C13, C14
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C15
1.3 pF Chip Capacitor
ATC100B1R3BT500XT
ATC
C16, C21
1.8 pF Chip Capacitors
ATC100B1R8BT500XT
ATC
C17
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C18, C19
3.9 pF Chip Capacitors
ATC100B3R9BT500XT
ATC
C20
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C22
470 μF, 63 V Electrolytic Capacitor
B41858-C8477-M000
EPCOS
R1, R2
10 Ω, 1/4 W Chip Resistors
232272461009
Phycomp
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8S18210WHSR3 MRF8S18210WGHSR3
4
RF Device Data
Freescale Semiconductor, Inc.
Gps, POWER GAIN (dB)
18
30
Gps
28
26
17.8
17.6
--31
VDD = 30 Vdc, Pout = 50 W (Avg.), IDQ = 1300 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
17.4
17.2
IRL
PARC
17
16.8
--32
0
--33
--10
--34
--35
ACPR
--36
16.6
16.4
1880
1900
1920
1940
1960
1980
2000
2020
--37
2040
--20
--30
--40
--50
--2.8
--3
--3.2
--3.4
--3.6
PARC (dB)
ηD
IRL, INPUT RETURN LOSS (dB)
32
18.2
ACPR (dBc)
18.4
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--3.8
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
IM7--L
--50
IM7--U
VDD = 30 Vdc, Pout = 80 W (PEP)
--60 I = 1300 mA
DQ
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
--70
1
10
100
300
TWO--TONE SPACING (MHz)
18.5
--1
18
17.5
17
16.5
16
--2
VDD = 30 Vdc, IDQ = 1300 mA, f = 1960 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
--1 dB = 25 W
--2 dB = 35 W
ηD
--3
PARC
10
30
50
--25
30
--5
--6
60
40
--3 dB = 48 W
--4
--20
50
ACPR
Gps
70
70
90
--30
--35
ACPR (dBc)
0
ηD, DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
20
--45
10
--50
110
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
17 1930 MHz
0
50
--10
40
30
1960 MHz
1960 MHz 1995 MHz
1930 MHz
16
60
15
Gps
ACPR
10
0
300
14
1
20
10
100
--20
--30
--40
ACPR (dBc)
VDD = 30 Vdc, IDQ = 1300 mA, Single--Carrier
1995 MHz
W--CDMA, 3.84 MHz Channel Bandwidth
19 Input Signal PAR = 9.9 dB @ 0.01%
1960 MHz
Probability on CCDF
1930 MHz
ηD
18
1995 MHz
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
VDD = 30 Vdc
Pin = 0 dBm
IDQ = 1300 mA
18.5
0
Gain
--5
GAIN (dB)
17.5
16.5
--10
IRL
15.5
--15
14.5
--20
13.5
1830
1860
1890
1920
1950
1980
2010
2040
IRL, INPUT RETURN LOSS (dB)
5
19.5
--25
2070
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8S18210WHSR3 MRF8S18210WGHSR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 30 Vdc, IDQ = 1300 mA, Pout = 50 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1880
3.52 -- j5.54
3.50 -- j2.60
1900
3.71 -- j4.76
3.42 -- j2.64
1920
3.97 -- j3.96
3.33 -- j2.67
1940
4.31 -- j3.15
3.23 -- j2.69
1960
4.76 -- j2.29
3.13 -- j2.71
1980
5.33 -- j1.40
3.02 -- j2.71
2000
6.08 -- j0.48
2.89 -- j2.71
2020
7.08 + j0.47
2.77 -- j2.71
2040
8.39 + j1.41
2.64 -- j2.69
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
Zload
Figure 10. Series Equivalent Source and Load Impedance
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 30 Vdc, IDQ = 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1930
5.06 -- j7.33
2.07 -- j3.37
54.3
269
49.2
55.2
331
51.2
1960
10.2 -- j6.91
2.14 -- j3.42
54.2
263
48.7
55.1
324
50.8
1995
13.1 -- j0.18
2.39 -- j3.53
54.1
257
48.5
55.0
316
49.7
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 11. Load Pull Performance — Maximum P1dB Tuning
VDD = 30 Vdc, IDQ = 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1930
5.06 -- j7.33
2.44 -- j1.46
52.7
186
58.9
53.4
219
61.4
1960
10.2 -- j6.91
2.23 -- j1.55
52.6
182
57.8
53.5
224
60.3
1995
13.1 -- j0.18
2.31 -- j1.63
52.6
182
56.6
53.3
214
59.8
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 12. Load Pull Performance — Maximum Drain Efficiency Tuning
MRF8S18210WHSR3 MRF8S18210WGHSR3
8
RF Device Data
Freescale Semiconductor, Inc.
C24
C3
C7
C5
C13*
C1
C11*
C9
R1
C15*
C18
C17
C19
R2
C10
C2
CUT OUT AREA
C16
C22
C23
C20*
C21*
C12*
C14*
C6
C4
C8
MRF8S18210HS/B
Rev. 0
*C11, C12, C13, C14, C15, C20, and C21 are mounted vertically.
Figure 13. MRF8S18210WHSR3(WGHSR3) Test Circuit Component Layout — 1805 MHz -- 1880 MHz
Table 6. MRF8S18210WHSR3(WGHSR3) Test Circuit Component Designations and Values — 1805 MHz -- 1880 MHz
Part
Description
Part Number
Manufacturer
C1, C2
2.2 μF Chip Capacitors
C3225X7R2A225M
TDK
C3, C4, C5, C6, C7, C8
10 μF Chip Capacitors
C5750X7S2A106MT
TDK
C9, C10, C11, C12, C13, C14
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C15
10 pF Chip Capacitor
ATC100B10R0BT500XT
ATC
C16, C17
2.2 pF Chip Capacitors
ATC100B2R2BT500XT
ATC
C18, C19, C22
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C20, C21
3.9 pF Chip Capacitors
ATC100B3R9BT500XT
ATC
C23
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C24
470 μF, 63 V Electrolytic Capacitor
B41858-C8477-M000
EPCOS
R1, R2
10 Ω, 1/4 W Chip Resistors
232272461009
Phycomp
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 1805 MHz -- 1880 MHz
20
18.5
ACPR
Gps
18.0
IRL
17.5
--35
--3
--36
--6
--37
PARC
17.0
--38
16.5
16.0
1760
--39
1780
1800
1820
1840
1860
1880
1900
--9
--12
--15
--40
1920
--18
--2
--2.4
--2.8
--3.2
--3.6
PARC (dB)
19.0
ACPR (dBc)
Gps, POWER GAIN (dB)
20.0
19.5
ηD, DRAIN
EFFICIENCY (%)
40
VDD = 30 Vdc, Pout = 50 W (Avg.), IDQ = 1300 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 35
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
30
ηD
25
20.5
IRL, INPUT RETURN LOSS (dB)
21.0
--4
f, FREQUENCY (MHz)
Figure 14. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
ηD
60
0
50
--10
40
1880 MHz
17
1805 MHz
16
30
1840 MHz
1880 MHz
15
20
ACPR
1840 MHz
10
1805 MHz
0
300
14
10
1
100
--20
--30
--40
ACPR (dBc)
VDD = 30 Vdc, IDQ = 1300 mA, Single--Carrier 1880 MHz
W--CDMA, 3.84 MHz Channel Bandwidth
1840 MHz
19 Input Signal PAR = 9.9 dB @ 0.01%
1805
MHz
Probability on CCDF
Gps
18
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
VDD = 30 Vdc
Pin = 0 dBm
IDQ = 1300 mA
19
0
18
GAIN (dB)
5
Gain
--5
17
IRL
16
--10
15
--15
14
1600
1650
1700
1750
1800
1850
1900
1950
IRL, INPUT RETURN LOSS (dB)
10
20
--20
2000
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
MRF8S18210WHSR3 MRF8S18210WGHSR3
10
RF Device Data
Freescale Semiconductor, Inc.
VDD = 30 Vdc, IDQ = 1300 mA, Pout = 50 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1760
1.81 -- j4.25
3.09 -- j2.28
1780
1.95 -- j4.06
2.97 -- j2.29
1800
2.13 -- j3.89
2.85 -- j2.29
1820
2.35 -- j3.77
2.71 -- j2.28
1840
2.61 -- j3.70
2.58 -- j2.25
1860
2.91 -- j3.74
2.45 -- j2.21
1880
3.19 -- j3.90
2.32 -- j2.16
1900
3.41 -- j4.21
2.19 -- j2.10
1920
3.48 -- j4.64
2.06 -- j2.03
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
Zload
Figure 17. Series Equivalent Source and Load Impedance — 1805 MHz -- 1880 MHz
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
11
VDD = 30 Vdc, IDQ = 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1805
0.79 -- j4.26
1.77 -- j2.83
54.4
275
50.5
55.3
339
52.0
1840
1.34 -- j5.03
1.83 -- j2.96
54.5
282
50.8
55.3
339
52.2
1880
2.15 -- j5.84
1.89 -- j2.98
54.4
275
51.0
55.3
339
51.8
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 18. Load Pull Performance — Maximum P1dB Tuning — 1805 MHz -- 1880 MHz
VDD = 30 Vdc, IDQ = 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1805
0.79 -- j4.26
3.02 -- j1.55
53.0
200
59.6
53.4
219
62.5
1840
1.34 -- j5.03
2.64 -- j1.20
52.8
191
60.7
53.5
224
63.0
1880
2.15 -- j5.84
2.40 -- j1.51
53.1
204
59.7
53.2
209
62.2
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 19. Load Pull Performance — Maximum Drain Efficiency Tuning — 1805 MHz -- 1880 MHz
MRF8S18210WHSR3 MRF8S18210WGHSR3
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
13
MRF8S18210WHSR3 MRF8S18210WGHSR3
14
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
15
MRF8S18210WHSR3 MRF8S18210WGHSR3
16
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8S18210WHS and MRF8S18210WGHS parts will be available for 2 years after release
of MRF8S18210WHS and MRF8S18210WGHS Freescale Semiconductor, Inc. reserves the right to limit the quantities that will
be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the
R5 tape and reel option will be offered MRF8S18210WHS and MRF8S18210WGHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2012
Description
• Initial Release of Data Sheet
MRF8S18210WHSR3 MRF8S18210WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
17
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E 2012 Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
Document Number: MRF8S18210WHS
Rev. 0, 4/2012
18
RF Device Data
Freescale Semiconductor, Inc.