WINNERJOIN MMDB4148 Switching diode Datasheet

RoHS
MMBD4148/BAS16TW
MMBD4148TW /BAS16TW
D
T
,. L
SWITCHING DIODE
FEATURES
Power dissipation
PD:
200
mW (Tamb=25℃)
Collector current
IO:
150
mA
Collector-base voltage
VR:
75
V
Operating and storage junction temperature range
IC
TJ, Tstg: -55℃ to +150℃
6
4
R
T
C
E
L
A
1
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
E
Parameter
Reverse breakdown voltage
J
E
Reverse voltage leakage current
Symbol
V(BR) R
IR
O
N
MAKING: KA2
unless otherwise specified)
Test
conditions
IR= 100µA
MAX
UNIT
V
VR=75V
1
VR=20V
0.025
0.715
0.855
1
1.25
V
2
pF
4
nS
Forward voltage
VF
Total capacitance
CT
VR=0V, f=1MHz
Reveres recovery time
trr
WEJ ELECTRONIC CO.
MIN
75
IF=1mA
IF=10mA
IF=50mA
IF=150mA
W
C
O
IF=IR=10mA
Irr=0.1×IR, RL=100Ω
Http:// www.wej.cn
µA
E-mail:[email protected]
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