SMD Schottky Barrier Diode CDBQR40-HF I o = 200 mA V R = 40 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041(1.05) 0.037(0.95) -Low reverse current. -Designed for mounting on small surface. -Extremely thin / leadless package. 0.026(0.65) 0.022(0.55) -Majority carrier conduction. Mechanical data 0.022(0.55) 0.018(0.45) -Case: 0402/SOD-923F standard package, molded plastic. 0.012(0.30) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BC 0.020(0.50) Typ. -Mounting position: Any. Dimensions in inches and (millimeter) -Weight: 0.001 gram(approx.). Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) Power dissipation V RM 40 V VR 40 V V R(RMS) 28 V IO 200 mA I FSM 0.6 A PD 125 mW Storage temperature T STG Junction temperature Tj -65 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 1mA I F = 40mA VF 0.38 1 V Reverse current V R = 30V IR 0.2 uA Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage CT 5 pF Reverse recovery time I F =I R =10mA,Irr=0.1xIR,RL=100 ohm T rr 5 nS REV:B Page 1 QW-G1100 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR40-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 100u Reverse current ( A ) 100 10 O 125 C 1u O 75 C 100n O 25 C C 10n O O 25 10u -25 O 125 C 1 C 7 5 OC Forward current (mA ) 1000 O -25 C 0.1 1n 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 40 Reverse voltage (V) Forward voltage (V) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 120 4 Mounting on glass epoxy PCBs f=1MHz O T A =25 C Average forward current(%) Capacitance between terminals ( P F) 30 20 3 2 1 100 80 60 40 20 0 0 0 10 20 30 40 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:B Page 2 QW-G1100 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed 0402 (SOD-923F) 0402 (SOD-923F) SYMBOL A B C d D D1 D2 (mm) 0.75 ± 0.10 1.15 ± 0.10 0.60 ± 0.10 1.55 + 0.10 178 ± 1 60.0 MIN. 13.0 ± 0.20 (inch) 0.026 ± 0.004 0.045 ± 0.004 0.024 ± 0.004 0.061 + 0.004 7.008 ± 0.04 2.362 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.22 ± 0.05 8.00 ± 0.20 13.5 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.531 MAX. REV:B Page 3 QW-G1100 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Marking Code Park Number Marking Code CDBQR40-HF BC BC Suggested PAD Layout 0402/SOD-923F SIZE (mm) (inch) A 0.750 0.030 B 0.500 0.020 C 0.700 0.028 D 1.250 0.049 E 0.250 0.010 D A E C B Standard Package Qty per Reel Reel Size (Pcs) (inch) 5000 7 Case Type 0402/SOD-923F REV:B Page 4 QW-G1100 Comchip Technology CO., LTD.