MORE MSN08B2K 80v(d-s) n-channel enhancement mode power mos fet Datasheet

MSN08B2K
80V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =80V,ID =120A
RDS(ON) <6mΩ @ VGS=10V
● High density cell design for ultra low Rdson
Lead Free
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
Schematic diagram
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
MSN08B2K
Device
Device Package
Reel Size
Tape width
Quantity
MSN08B2K
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
80
V
Gate-Source Voltage
VGS
±20
V
ID
120
A
ID (100℃)
84
A
Pulsed Drain Current
IDM
450
A
Maximum Power Dissipation
PD
220
W
1.47
W/℃
EAS
1400
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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MSN08B2K
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
℃/W
0.68
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
80
89
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=80V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
-
4.9
6
mΩ
gFS
VDS=25V,ID=5A
90
-
-
S
-
6500
-
PF
-
520
-
PF
Crss
-
460
-
PF
Turn-on Delay Time
td(on)
-
26
-
nS
Turn-on Rise Time
tr
VDD=30V,ID=2A
-
24
-
nS
td(off)
VGS=10V,RG=2.5Ω
-
91
-
nS
-
39
-
nS
-
163
nC
-
31
nC
-
64
nC
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=25V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
VSD
VGS=0V,IS=40A
IS
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
-
1.2
V
-
-
120
A
TJ = 25°C, IF = 40A
-
42
60
nS
(Note3)
-
66
80
nC
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
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MSN08B2K
Test circuit
1)EAS test Circuit
2)Gate charge test Circuit
3)Switch Time Test Circuit
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MSN08B2K
ID- Drain Current (A)
Normalized On-Resistance
T ypical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
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Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
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C Capacitance (pF)
MSN08B2K
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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MSN08B2K
TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
7.500 REF.
3.400
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0.295 REF.
3.800
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0.134
0.150
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