HSM21PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 2.0 Amperes HSM28PT FEATURES * * * * * For surface mounted applications Low forward voltage, high current capability Low leakage current Metallurgically bonded construction Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals SMA 0.110(2.80) 0.065(1.65) 0.094(2.40) 0.049(1.25) (1) 0.181(4.60) (2) 0.165(4.20) MECHANICAL DATA Case: JEDEC SMA molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.002 ounces, 0.064 gram 0.012(0.310) 0.006(0.150) 0.090(2.30) 0.075(1.90) 0.060(1.52) 0.008 (0.203)(max) 0.030(0.76) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.212(5.40) Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%. 0.189(4.80) SMA Dimensions in inches and (millimeters) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL HSM21PT HSM22PT HSM23PT HSM24PT HSM25PT HSM26PT HSM27PT HSM28PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 Volts o Maximum Average Forward Rectified Current TL = 100 C IO 2.0 Amps IFSM 60 Amps Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range CJ 30 TJ, TSTG 20 pF o -65 to +150 C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Maximum Instantaneous Forward Voltage at 2.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC Maximum Reverse Recovery Time (Note 2) NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts 2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A VF HSM21PT HSM22PT HSM23PT HSM24PTHSM25PT HSM26PTHSM27PT HSM28PT 1.0 1.3 1.5 1.7 UNITS Volts 5.0 uAmps 100 uAmps IR trr 50 70 nSec 2002-5 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) D.U.T (+) 0 PULSE GENERATOR (NOTE 2) 25 Vdc (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A 1cm NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. SET TIME BASE FOR 10/20 nS/cm FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 2.0 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE ( OC ) TJ =100oC 1.0 TJ =25oC .1 HS 8P T M2 6P M2 7P T~ HS M2 HS M2 HS SM ~H ~H 4PT 1PT M2 T 25P T 23P SM Pulse Width = 300uS 1% Duty Cycle 1.0 HS TJ =125oC 10 T 10 INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 0.1 TJ =25oC .01 .001 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1.8 FIG. 6 - TYPICAL JUNCTION CAPACITANCE 70 200 60 JUNCTION CAPACITANCE, ( pF ) PEAK FORWARD SURGE CURRENT, ( A ) AVERAGE FORWARD CURRENT, ( A ) RATING CHARACTERISTIC CURVES ( HSM21PT THRU HSM28PT ) 8.3ms Single Half Sine-Wave (JEDEC Method) 50 40 30 20 10 0 100 60 HSM2 1PT~ 40 HSM2 6PT~H HSM2 20 5PT SM28P T 10 6 4 TJ =25oC 2 1 1 2 5 10 20 NUMBER OF CYCLES AT 60 Hz 50 100 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100