Diode RapidSwitchingEmitterControlledDiode IDV20E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl IDV20E65D1 EmitterControlledDiodeRapid1Series RapidSwitchingEmitterControlledDiode Features: A •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •175°Cjunctionoperatingtemperature •Pb-freeleadplating;RoHScompliant C Applications: •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies C A KeyPerformanceandPackageParameters Type IDV20E65D1 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 20A 1.35V 175°C E20ED1 PG-TO220-2-22 FP 2 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 28.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTC=25°C Ptot 38.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 120.0 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit Diode thermal resistance,1) junction - case Rth(j-c) 4.00 K/W Thermal resistance junction - ambient Rth(j-a) 65 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 1.35 1.30 1.26 1.70 - - 2.0 350.0 40.0 - Unit StaticCharacteristic Diode forward voltage VF IF=20.0A Tvj=25°C Tvj=125°C Tvj=175°C Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C V µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 7.0 - Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case 1) LE nH Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. 4 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VR=400V, IF=20.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 42 - ns - 0.45 - µC - 15.6 - A - -1400 - A/µs Tvj=25°C, VR=400V, IF=20.0A, diF/dt=300A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 65 - ns - 0.31 - µC - 7.6 - A - -750 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175°C, VR=400V, IF=20.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 73 - ns - 1.12 - µC - 24.5 - A - -850 - A/µs Tvj=125°C, VR=400V, IF=20.0A, diF/dt=300A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 92 - ns - 0.79 - µC - 13.5 - A - -880 - A/µs DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 5 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series 40 30 35 30 IF,FORWARDCURRENT[A] Ptot,POWERDISSIPATION[W] 25 25 20 15 10 20 15 10 5 5 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 2. Diodeforwardcurrentasafunctionofcase temperature (Tvj≤175°C) Tj=25°C, IF = 20A Tj=175°C, IF = 20A 120 1 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 140 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 100 80 60 40 20 i: 1 2 3 4 5 6 7 8 ri[K/W]: 2.0E-3 0.1154276 0.336742 0.464846 0.410844 0.89244 1.6214 0.1316952 τi[s]: 2.9E-6 5.2E-5 3.0E-4 2.8E-3 0.02419074 0.3581748 2.428349 28.13731 0.01 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 0 200 10 tp,PULSEWIDTH[s] 600 1000 1400 1800 2200 2600 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 4. Typicalreverserecoverytimeasafunctionof diodecurrentslope (VR=400V) 6 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series 1.40 40 Tj=25°C, IF = 20A Tj=175°C, IF = 20A 35 1.20 Irrm,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] Tj=25°C, IF = 20A Tj=175°C, IF = 20A 1.00 0.80 0.60 0.40 0.20 0.00 200 600 1000 1400 1800 2200 2600 30 25 20 15 10 5 0 200 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 600 1000 1400 1800 2200 2600 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalreverserecoverychargeasafunction Figure 6. Typicalpeakreverserecoverycurrentasa ofdiodecurrentslope functionofdiodecurrentslope (VR=400V) (VR=400V) 0 Tj=25°C Tj=175°C 35 -400 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] -200 40 Tj=25°C, IF = 20A Tj=175°C, IF = 20A -600 -800 -1000 -1200 -1400 30 25 20 15 10 -1600 5 -1800 -2000 200 600 1000 1400 1800 2200 2600 0 0.00 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 7. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) Figure 8. Typicaldiodeforwardcurrentasafunctionof forwardvoltage 7 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series 2.00 IF=10A IF=20A IF=40A VF,FORWARDVOLTAGE[V] 1.75 1.50 1.25 1.00 0.75 0.50 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicaldiodeforwardvoltageasafunctionof junctiontemperature 8 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series 9 Rev.2.1,2014-09-18 IDV20E65D1 EmitterControlledDiodeRapid1Series vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E = off ∫V t CE t4 x IC x d t E 1 t1 on = ∫V t CE x IC x d t 2% VCE 3 t2 t3 t4 10 t Rev.2.1,2014-09-18 IDV20E65D1 Emitter Controlled Diode Rapid 1 Series Revision History IDV20E65D1 Revision: 2014-09-18, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-09-18 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. 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For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.1, 2014-09-18