Filtronic FPD2250SOT89E Low noise high linearity packaged phemt Datasheet

FPD2250SOT89
Datasheet v3.0
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
PACKAGE:
FEATURES (1850MHZ):
•
•
•
•
•
•
29 dBm Output Power (P1dB)
14 dB Small-Signal Gain (SSG)
1.0 dB Noise Figure
44 dBm Output IP3
50% Power-Added Efficiency
FPD2250SOT89E - RoHS compliant
GENERAL DESCRIPTION:
9
The FPD2250SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 2250 µm Schottky barrier
gate, defined by high-resolution stepper-based
photolithography. The double recessed gate
structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
TYPICAL APPLICATIONS:
•
•
•
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
28
29
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
12
14
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
50
%
POUT = P1dB
Noise Figure
Output Third-Order Intercept Point
NF
IP3
(from 15 to 5 dB below P1dB)
VDS = 5 V; IDS = 50% IDSS
1.2
VDS = 5 V; IDS = 25% IDSS
1.0
1.4
dB
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
43
Matched for best IP3
44
560
700
dBm
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
825
mA
Maximum Drain-Source Current
IMAX
VDS = 2 V; VGS ≅ +1 V
1.1
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
600
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
10
µA
Pinch-Off Voltage
|VP|
VDS = 2 V; IDS = 2.25 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 2.25 mA
12
18
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 2.25 mA
12
16
V
Thermal Resistance
RθJC
50
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
-3V < VGS < +0V
8V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3V
Drain-Source Current
IDS
For VDS < 2V
IDss
Gate Current
IG
Forward or reverse current
22mA
PIN
Under any acceptable bias state
525mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-55°C to 150°C
Total Power Dissipation
PTOT
See De-Rating Note below
2.5W
Comp.
Under any bias conditions
5dB
RF Input Power
2
Gain Compression
Simultaneous Combination of Limits
3
2 or more Max. Limits
Notes:
1
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
4
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 2.5 - (0.02W/°C) x TPACK
where TPACK= source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C carrier temperature: PTOT = 2.5W – (0.02 x (65 – 22)) = 1.64W
BIASING GUIDELINES:
•
•
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices.
For standard class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. A class
A/B bias of 25-33% of IDSS to achieve better OIP3 and Noise Figure performance is suggested.
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
Power Transfer Characteristric
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
Drain Efficiency and PAE
VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
30.0
3.75
65.0%
55.0%
Comp Point
55.0%
2.75
Gain Compression (dB)
2.25
27.0
1.75
26.0
1.25
PAE
0.75
25.0
PAE (%)
Pout (dBm)
28.0
Eff.
45.0%
45.0%
35.0%
35.0%
25.0%
25.0%
15.0%
15.0%
Dain Efficiency (%)
29.0
Output Power (dBm)
65.0%
3.25
0.25
24.0
-0.25
23.0
5.0%
-0.75
9
11
13
15
17
5.0%
9
19
11
13
15
17
19
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
Typical Intermodulation Performance
VDS =5V IDS = 50% IDSS at f = 1.85 GHz
20.0
19.0
FPD2250SOT89 5V / 50%IDSS
30
-44
MSG
25
-46
18.0
-52
15.0
14.0
Pout (dBm)
3rds (dBc)
-54
13.0
-56
20
Gain
-50
16.0
S21
3rd Order IM Products (dBc)
Output Power (dBm)
-48
17.0
15
10
12.0
5
-58
11.0
10.0
-60
-2.5
-1.5
-0.5
0.6
1.6
2.6
3.6
0
4.6
1
Input Power (dBm)
2
3
4
5
Frequency (GHz)
6
7
8
Note:
pHEMT devices have enhanced
intermodulation performance. This yields OIP3
values of about P1dB + 14dBm. This IMD
enhancement is affected by the quiescent bias
and the matching applied to the device.
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD1500SOT89
0.60
Note: The recommended method for measuring
IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V. This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above). Setting the VDS > 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
Drain-Source Current (A)
0.50
0.40
VG=-1.5V
VG-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.5V
VG=-0.25V
VG=0V
0.30
0.20
0.10
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
TYPICAL OUTPUT PLANE POWER CONTOURS: (VDS = 5v, IDS = 50%IDSS)
FPD2250SOT89 POWER CONTUORS 1850MHz
0
2.
0
3.
23dBm
24dBm
5.0
0.2
5.0
27dBm
10.0
5.0
4.0
3.0
0.6
0.4
0.2
0
2.0
10.0
28dBm
10.0
5.0
4.0
3.0
2.0
0.8
0.6
0.4
1.0
0.2
0.2
10.0
0
4.
25dBm
26dBm
1.0
24dBm
0.8
0.
4
4.0
0
1.0
0.8
2.
0
0.
4
3.0
25dBm
26dBm
27dBm
Swp Max
115
6
0.
1.0
0.6
0.8
FPD2250SOT89 POWER CONTUORS 900MHz
Swp Max
145
28dBm
29dBm
-10.0
-10.0
29dBm
2
-0.
-5.
0
-0.2
-5.0
-4
.0
-4.0
.0
-3
.0
.4
-0
1850 MHz
Contours swept with a constant input power,
set so that optimum P1dB is achieved at the
point of output match.
Input (Source plane) Γs:
0.59 ∠ -177.5º
0.25 - j0.02 (normalized)
12.5 – j1.0 Ω
Nominal IP3 performance is obtained with
this input plane match, and the output plane
match as shown.
.
-2
Swp Min
1
-1.0
-0.8
-0
.6
Swp Min
1
-1.0
-0.8
-0.6
.0
-2
0
.4
-3
-0
900 MHz
Contours swept with a constant input power,
set so that optimum P1dB is achieved at the
point of output match.
Input (Source plane) Γs:
0.67 ∠ 103.6º
0.30 + j0.74 (normalized)
15 + j37.0 Ω
Nominal IP3 performance is obtained with
this input plane match, and the output plane
match as shown.
TYPICAL SCATTERING PARAMETERS (50Ω SYSTEM):
FPD2250SOT89 5V / 50%IDSS
0
0 .2
0
5.0
10.0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.2
0
10.0
4.0
5.0
3.0
2.0
1.0
4.
2 GHz
0.4
0 .2
0.8
0
3 GHz
10.0
2 GHz
3.
7 GHz
4 GHz
5. 0
0.6
6 GHz
5 GHz
4.
0.4
2.
0
2.
0
0
2.5 GHz
0.2
1.0
0. 8
6
0.
1.0
0. 8
0.
4
3.
3 GHz
0
Swp Max
8GHz
7 GHz
4 GHz
3.5 GHz
0.
4
6
0.
6 GHz
5 GHz
FPD2250SOT89 5V / 50%IDSS
Swp Max
8GHz
1 GHz
1.5 GHz
-10. 0
-10. 0
.0
-2
-1.0
S22
Swp Min
0.5GHz
-0 .8
6
.0
-2
-1.0
-0 .8
6
4
-0
.
.0
-0
.
-3
S11
.
-0
-
-4
.0
-5 .
0
4
3.
0
.
-0
2
-4
.0
-5.
0
- 0.
. 2 GHz
-01
Swp Min
0.5GHz
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
S-PARAMETERS: BIASED @ 5V, 50%IDSS
FREQ[GHz]
0.500
0.750
1.000
1.250
1.500
1.750
2.000
2.250
2.500
2.750
3.000
3.250
3.500
3.750
4.000
4.250
4.500
4.750
5.000
5.250
5.500
5.750
6.000
6.250
6.500
6.750
7.000
7.250
7.500
7.750
8.000
8.250
8.500
8.750
9.000
9.250
9.500
9.750
10.000
10.250
10.500
10.750
11.000
11.250
11.500
11.750
12.000
S11m
0.823
0.772
0.758
0.753
0.752
0.745
0.746
0.740
0.743
0.744
0.740
0.751
0.750
0.755
0.762
0.762
0.781
0.788
0.803
0.809
0.810
0.828
0.880
0.862
0.878
0.853
0.854
0.851
0.847
0.856
0.869
0.873
0.868
0.878
0.885
0.886
0.894
0.897
0.899
0.902
0.905
0.906
0.907
0.912
0.916
0.915
0.912
S11a
-119.1
-142.8
-157.5
-168.0
-178.1
174.3
166.8
159.4
152.6
145.5
138.4
132.4
125.7
119.7
113.4
107.4
102.3
97.0
92.1
86.7
82.3
78.1
71.8
67.8
62.1
58.8
55.3
51.5
47.7
43.8
39.4
33.4
28.1
23.1
17.4
12.5
7.8
3.5
0.0
-3.1
-6.0
-8.5
-10.9
-13.0
-15.8
-18.3
-21.2
S21m
16.103
11.584
9.092
7.526
6.335
5.505
4.905
4.410
4.030
3.702
3.409
3.173
2.953
2.753
2.573
2.408
2.260
2.119
2.000
1.896
1.801
1.718
1.701
1.610
1.540
1.452
1.385
1.337
1.283
1.247
1.203
1.145
1.094
1.043
0.995
0.949
0.897
0.851
0.812
0.771
0.743
0.711
0.684
0.662
0.644
0.632
0.620
S21a
109.2
97.3
87.6
79.7
72.9
65.7
59.1
52.7
46.3
40.4
33.7
27.4
21.2
15.0
9.1
2.9
-2.7
-8.2
-13.6
-18.9
-24.3
-29.3
-35.9
-40.7
-47.5
-51.7
-56.3
-60.9
-65.9
-71.0
-76.8
-82.4
-87.5
-92.9
-97.9
-102.8
-107.9
-112.4
-116.8
-121.0
-125.0
-129.0
-132.7
-136.8
-140.1
-144.0
-147.9
S12m
0.027
0.033
0.038
0.044
0.049
0.054
0.060
0.066
0.072
0.078
0.083
0.089
0.095
0.100
0.104
0.108
0.112
0.115
0.118
0.122
0.125
0.129
0.137
0.138
0.142
0.142
0.144
0.147
0.148
0.153
0.155
0.155
0.155
0.155
0.155
0.154
0.153
0.151
0.149
0.146
0.142
0.137
0.135
0.133
0.133
0.133
0.136
S12a
46.5
44.3
42.7
41.6
40.2
37.8
35.6
32.8
29.4
26.8
22.5
18.7
14.7
10.7
6.4
2.1
-1.8
-5.8
-9.6
-13.3
-17.2
-20.8
-26.3
-29.6
-35.4
-38.2
-41.7
-45.3
-49.2
-53.4
-58.3
-62.8
-67.5
-72.2
-76.6
-81.1
-85.9
-90.3
-95.2
-100.3
-104.9
-109.0
-112.4
-115.3
-118.3
-121.2
-124.8
S22m
0.459
0.450
0.455
0.445
0.445
0.447
0.439
0.439
0.433
0.436
0.436
0.436
0.450
0.459
0.473
0.487
0.497
0.512
0.521
0.532
0.537
0.548
0.589
0.583
0.599
0.589
0.584
0.578
0.580
0.591
0.602
0.620
0.634
0.655
0.671
0.687
0.702
0.715
0.724
0.731
0.733
0.743
0.746
0.749
0.739
0.734
0.723
S22a
-159.0
-167.9
-176.0
178.5
172.0
167.4
162.5
157.4
152.2
146.2
140.8
134.3
128.5
122.9
117.7
112.8
108.0
103.2
98.7
94.6
90.5
86.8
82.7
79.0
72.5
67.5
61.7
56.7
51.6
46.6
41.0
36.4
31.8
28.2
24.5
22.0
19.5
17.2
14.2
11.1
8.5
5.9
3.1
0.1
-3.4
-6.9
-11.4
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
HANDLING PRECAUTIONS:
PACKAGE OUTLINE:
(dimensions in millimeters – mm)
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages of
storage, handling, assembly, and testing.
These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
DISCLAIMERS:
PCB Foot Print
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART
NUMBER
DESCRIPTION
FPD2250SOT89
Packaged pHEMT
FPD2250SOT89E
RoHS Compliant Packaged pHEMT
FPD2250SOT89CE
RoHS Compliant Packaged pHEMT with enhanced
passivation (Recommended for New Designs)
Units in inches
PREFERRED ASSEMBLY INSTRUCTIONS:
Available on request.
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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