FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES (1850MHZ): • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant GENERAL DESCRIPTION: 9 The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels. TYPICAL APPLICATIONS: • • • Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 28 29 dBm Small-Signal Gain SSG VDS = 5 V; IDS = 50% IDSS 12 14 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; 50 % POUT = P1dB Noise Figure Output Third-Order Intercept Point NF IP3 (from 15 to 5 dB below P1dB) VDS = 5 V; IDS = 50% IDSS 1.2 VDS = 5 V; IDS = 25% IDSS 1.0 1.4 dB VDS = 5V; IDS = 50% IDSS Matched for optimal power 43 Matched for best IP3 44 560 700 dBm Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 825 mA Maximum Drain-Source Current IMAX VDS = 2 V; VGS ≅ +1 V 1.1 mA Transconductance GM VDS = 2 V; VGS = 0 V 600 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 10 µA Pinch-Off Voltage |VP| VDS = 2 V; IDS = 2.25 mA 0.7 1.0 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 2.25 mA 12 18 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 2.25 mA 12 16 V Thermal Resistance RθJC 50 °C/W Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2250SOT89 Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS -3V < VGS < +0V 8V Gate-Source Voltage VGS 0V < VDS < +8V -3V Drain-Source Current IDS For VDS < 2V IDss Gate Current IG Forward or reverse current 22mA PIN Under any acceptable bias state 525mW Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -55°C to 150°C Total Power Dissipation PTOT See De-Rating Note below 2.5W Comp. Under any bias conditions 5dB RF Input Power 2 Gain Compression Simultaneous Combination of Limits 3 2 or more Max. Limits Notes: 1 TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 2.5 - (0.02W/°C) x TPACK where TPACK= source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65°C carrier temperature: PTOT = 2.5W – (0.02 x (65 – 22)) = 1.64W BIASING GUIDELINES: • • • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. A class A/B bias of 25-33% of IDSS to achieve better OIP3 and Noise Figure performance is suggested. 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2250SOT89 Datasheet v3.0 TYPICAL TUNED RF PERFORMANCE: Power Transfer Characteristric VDS = 5V IDS = 50% IDSS at f = 1.85 GHz Drain Efficiency and PAE VDS = 5V IDS = 50% IDSS at f = 1.85 GHz 30.0 3.75 65.0% 55.0% Comp Point 55.0% 2.75 Gain Compression (dB) 2.25 27.0 1.75 26.0 1.25 PAE 0.75 25.0 PAE (%) Pout (dBm) 28.0 Eff. 45.0% 45.0% 35.0% 35.0% 25.0% 25.0% 15.0% 15.0% Dain Efficiency (%) 29.0 Output Power (dBm) 65.0% 3.25 0.25 24.0 -0.25 23.0 5.0% -0.75 9 11 13 15 17 5.0% 9 19 11 13 15 17 19 Input Power (dBm) Input Power (dBm) NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum output power at 1dB gain compression. Typical Intermodulation Performance VDS =5V IDS = 50% IDSS at f = 1.85 GHz 20.0 19.0 FPD2250SOT89 5V / 50%IDSS 30 -44 MSG 25 -46 18.0 -52 15.0 14.0 Pout (dBm) 3rds (dBc) -54 13.0 -56 20 Gain -50 16.0 S21 3rd Order IM Products (dBc) Output Power (dBm) -48 17.0 15 10 12.0 5 -58 11.0 10.0 -60 -2.5 -1.5 -0.5 0.6 1.6 2.6 3.6 0 4.6 1 Input Power (dBm) 2 3 4 5 Frequency (GHz) 6 7 8 Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB + 14dBm. This IMD enhancement is affected by the quiescent bias and the matching applied to the device. TYPICAL I-V CHARACTERISTICS: DC IV Curves FPD1500SOT89 0.60 Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits. Drain-Source Current (A) 0.50 0.40 VG=-1.5V VG-1.25V VG=-1.00V VG=-0.75V VG=-0.5V VG=-0.25V VG=0V 0.30 0.20 0.10 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Drain-Source Voltage (V) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2250SOT89 Datasheet v3.0 TYPICAL OUTPUT PLANE POWER CONTOURS: (VDS = 5v, IDS = 50%IDSS) FPD2250SOT89 POWER CONTUORS 1850MHz 0 2. 0 3. 23dBm 24dBm 5.0 0.2 5.0 27dBm 10.0 5.0 4.0 3.0 0.6 0.4 0.2 0 2.0 10.0 28dBm 10.0 5.0 4.0 3.0 2.0 0.8 0.6 0.4 1.0 0.2 0.2 10.0 0 4. 25dBm 26dBm 1.0 24dBm 0.8 0. 4 4.0 0 1.0 0.8 2. 0 0. 4 3.0 25dBm 26dBm 27dBm Swp Max 115 6 0. 1.0 0.6 0.8 FPD2250SOT89 POWER CONTUORS 900MHz Swp Max 145 28dBm 29dBm -10.0 -10.0 29dBm 2 -0. -5. 0 -0.2 -5.0 -4 .0 -4.0 .0 -3 .0 .4 -0 1850 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) Γs: 0.59 ∠ -177.5º 0.25 - j0.02 (normalized) 12.5 – j1.0 Ω Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. . -2 Swp Min 1 -1.0 -0.8 -0 .6 Swp Min 1 -1.0 -0.8 -0.6 .0 -2 0 .4 -3 -0 900 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) Γs: 0.67 ∠ 103.6º 0.30 + j0.74 (normalized) 15 + j37.0 Ω Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. TYPICAL SCATTERING PARAMETERS (50Ω SYSTEM): FPD2250SOT89 5V / 50%IDSS 0 0 .2 0 5.0 10.0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.2 0 10.0 4.0 5.0 3.0 2.0 1.0 4. 2 GHz 0.4 0 .2 0.8 0 3 GHz 10.0 2 GHz 3. 7 GHz 4 GHz 5. 0 0.6 6 GHz 5 GHz 4. 0.4 2. 0 2. 0 0 2.5 GHz 0.2 1.0 0. 8 6 0. 1.0 0. 8 0. 4 3. 3 GHz 0 Swp Max 8GHz 7 GHz 4 GHz 3.5 GHz 0. 4 6 0. 6 GHz 5 GHz FPD2250SOT89 5V / 50%IDSS Swp Max 8GHz 1 GHz 1.5 GHz -10. 0 -10. 0 .0 -2 -1.0 S22 Swp Min 0.5GHz -0 .8 6 .0 -2 -1.0 -0 .8 6 4 -0 . .0 -0 . -3 S11 . -0 - -4 .0 -5 . 0 4 3. 0 . -0 2 -4 .0 -5. 0 - 0. . 2 GHz -01 Swp Min 0.5GHz 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2250SOT89 Datasheet v3.0 S-PARAMETERS: BIASED @ 5V, 50%IDSS FREQ[GHz] 0.500 0.750 1.000 1.250 1.500 1.750 2.000 2.250 2.500 2.750 3.000 3.250 3.500 3.750 4.000 4.250 4.500 4.750 5.000 5.250 5.500 5.750 6.000 6.250 6.500 6.750 7.000 7.250 7.500 7.750 8.000 8.250 8.500 8.750 9.000 9.250 9.500 9.750 10.000 10.250 10.500 10.750 11.000 11.250 11.500 11.750 12.000 S11m 0.823 0.772 0.758 0.753 0.752 0.745 0.746 0.740 0.743 0.744 0.740 0.751 0.750 0.755 0.762 0.762 0.781 0.788 0.803 0.809 0.810 0.828 0.880 0.862 0.878 0.853 0.854 0.851 0.847 0.856 0.869 0.873 0.868 0.878 0.885 0.886 0.894 0.897 0.899 0.902 0.905 0.906 0.907 0.912 0.916 0.915 0.912 S11a -119.1 -142.8 -157.5 -168.0 -178.1 174.3 166.8 159.4 152.6 145.5 138.4 132.4 125.7 119.7 113.4 107.4 102.3 97.0 92.1 86.7 82.3 78.1 71.8 67.8 62.1 58.8 55.3 51.5 47.7 43.8 39.4 33.4 28.1 23.1 17.4 12.5 7.8 3.5 0.0 -3.1 -6.0 -8.5 -10.9 -13.0 -15.8 -18.3 -21.2 S21m 16.103 11.584 9.092 7.526 6.335 5.505 4.905 4.410 4.030 3.702 3.409 3.173 2.953 2.753 2.573 2.408 2.260 2.119 2.000 1.896 1.801 1.718 1.701 1.610 1.540 1.452 1.385 1.337 1.283 1.247 1.203 1.145 1.094 1.043 0.995 0.949 0.897 0.851 0.812 0.771 0.743 0.711 0.684 0.662 0.644 0.632 0.620 S21a 109.2 97.3 87.6 79.7 72.9 65.7 59.1 52.7 46.3 40.4 33.7 27.4 21.2 15.0 9.1 2.9 -2.7 -8.2 -13.6 -18.9 -24.3 -29.3 -35.9 -40.7 -47.5 -51.7 -56.3 -60.9 -65.9 -71.0 -76.8 -82.4 -87.5 -92.9 -97.9 -102.8 -107.9 -112.4 -116.8 -121.0 -125.0 -129.0 -132.7 -136.8 -140.1 -144.0 -147.9 S12m 0.027 0.033 0.038 0.044 0.049 0.054 0.060 0.066 0.072 0.078 0.083 0.089 0.095 0.100 0.104 0.108 0.112 0.115 0.118 0.122 0.125 0.129 0.137 0.138 0.142 0.142 0.144 0.147 0.148 0.153 0.155 0.155 0.155 0.155 0.155 0.154 0.153 0.151 0.149 0.146 0.142 0.137 0.135 0.133 0.133 0.133 0.136 S12a 46.5 44.3 42.7 41.6 40.2 37.8 35.6 32.8 29.4 26.8 22.5 18.7 14.7 10.7 6.4 2.1 -1.8 -5.8 -9.6 -13.3 -17.2 -20.8 -26.3 -29.6 -35.4 -38.2 -41.7 -45.3 -49.2 -53.4 -58.3 -62.8 -67.5 -72.2 -76.6 -81.1 -85.9 -90.3 -95.2 -100.3 -104.9 -109.0 -112.4 -115.3 -118.3 -121.2 -124.8 S22m 0.459 0.450 0.455 0.445 0.445 0.447 0.439 0.439 0.433 0.436 0.436 0.436 0.450 0.459 0.473 0.487 0.497 0.512 0.521 0.532 0.537 0.548 0.589 0.583 0.599 0.589 0.584 0.578 0.580 0.591 0.602 0.620 0.634 0.655 0.671 0.687 0.702 0.715 0.724 0.731 0.733 0.743 0.746 0.749 0.739 0.734 0.723 S22a -159.0 -167.9 -176.0 178.5 172.0 167.4 162.5 157.4 152.2 146.2 140.8 134.3 128.5 122.9 117.7 112.8 108.0 103.2 98.7 94.6 90.5 86.8 82.7 79.0 72.5 67.5 61.7 56.7 51.6 46.6 41.0 36.4 31.8 28.2 24.5 22.0 19.5 17.2 14.2 11.1 8.5 5.9 3.1 0.1 -3.4 -6.9 -11.4 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD2250SOT89 Datasheet v3.0 HANDLING PRECAUTIONS: PACKAGE OUTLINE: (dimensions in millimeters – mm) To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: PCB Foot Print This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER DESCRIPTION FPD2250SOT89 Packaged pHEMT FPD2250SOT89E RoHS Compliant Packaged pHEMT FPD2250SOT89CE RoHS Compliant Packaged pHEMT with enhanced passivation (Recommended for New Designs) Units in inches PREFERRED ASSEMBLY INSTRUCTIONS: Available on request. 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com