200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTD723YE 0.7 1.6 0.55 0.3 (2) 1.6 0.2 0.15 0.5 0.5 EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> 0.1Min. (1) 0.2 1.0 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : M62 DTD723YM 1.2 0.32 0.2 zFeature 1. VCE (sat) is lower than the conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4. Only the on / off conditions need to be set for operation, making the device design easy. 0.8 (3) 0.8 1.2 (3) 0.22 (1)(2) 0.4 0.4 0.2 zStructure NPN epitaxial plannar silicon transistor (Resistor built-in type) 0.13 0.5 0.8 (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : M62 zPackaging specifications Package EMT3 VMT3 Packaging type Taping Taping TL T2L 3000 8000 Code Part No. Basic ordering unit (pieces) − DTD723YE − DTD723YM zAbsolute maximum ratings (Ta=25°C) Symbol Parameter zInner circuit Limits DTD743EE DTD743EM Unit VCC 30 V Input voltage VIN −10 to +20 V 200 mA Collector current ∗1 IC (max) Power dissipation ∗2 OUT R1 Supply voltage PD 150 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C IN R2 GND OUT IN ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ GND R1=2.2kΩ / R2=10kΩ 1/2 2009.05 - Rev.B DTD743EE / DTD743EM Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 2.5 − − VO(on) − 70 300 mV IO/II= 50mA / 2.5mA II − − 1.4 mA VI= 5V IO(off) − − 0.5 µA VCC= 30V, VI=0V DC current gain GI 115 − − − Transition frequency ∗ fT − 260 − MHz VCE= 10V, IE= −5mA, f=100MHz Input resistance R1 3.29 4.7 6.11 kΩ − Resistance ratio R2/R1 0.8 1.0 1.2 − − Input voltage Output voltage Input current Output current Unit Conditions VCC= 5V, IO= 100µA V VO= 0.3V, IO= 20mA VO= 2V, IO= 100mA ∗ Characteristics of built-in transistor. zElectrical characteristics curves 100 100 25℃ 85℃ OUTPUT CURRENT : I O (mA) INPUT VOLTAGE : V I (on) (V) Ta= －40℃ 125℃ 10 1 V0= 0.3V 0.1 0.1 1 10 100 VCC = 5V 10 Ta=125℃ 85℃ 25℃ 1 －40℃ 0.1 0 1000 1 DC CURENT GAIN : G I Ta=125℃ 85℃ 25℃ 100 －40℃ 10 1 0.1 3 1 VO= 2V OUTPUT VOLTAGE : VO(on) (V) 1000 2 4 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (mA) IC /II=20 Ta=125℃ 85℃ 25℃ －40℃ 0.1 0.01 1 10 100 OUTPUT CURENT : IO (mA) 1000 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 10 100 1000 OUOPUT CURRENT : IO (mA) 2/2 2009.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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