AP6679BMT
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Low On-resistance
▼ Simple Drive Requirement
D
BVDSS
RDS(ON)
ID
-30V
9mΩ
-60A
G
▼ RoHS Compliant & Halogen-Free
S
D
Description
AP6679B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
D
D
S
S
S
G
®
PMPAK 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
-60
A
-19.1
A
-15.3
A
-200
A
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
50
W
PD@TA=25℃
Total Power Dissipation
5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
2.5
℃/W
25
℃/W
1
201609051
AP6679BMT
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-20A
-
-
9
mΩ
VGS=-4.5V, ID=-20A
-
-
15
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
gfs
Forward Transconductance
VDS=-10V, ID=-20A
-
66
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-20A
-
43
69
nC
Qgs
Gate-Source Charge
VDS=-15V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
21
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
16
-
ns
tr
Rise Time
ID=-1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
69
-
ns
tf
Fall Time
VGS=-10V
-
43
-
ns
Ciss
Input Capacitance
VGS=0V
-
3900 6240
pF
Coss
Output Capacitance
VDS=-15V
-
620
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
520
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
6
Ω
Min.
Typ.
IS=-20A, VGS=0V
-
-
-1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-20A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 60 oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679BMT
120
200
T C =25 o C
-10V
-8.0V
-7.0V
-6.0V
-5.0V
V G = -4.0V
120
-10V
-8.0V
-7.0V
-6.0V
-5.0V
V G = -4.0V
100
-ID , Drain Current (A)
-ID , Drain Current (A)
160
T C = 150 o C
80
80
60
40
40
20
0
0
0
2
4
6
8
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I D = -20A
V G = -10V
I D = -20 A
T C =25 ℃
1.6
10
.
Normalized RDS(ON)
RDS(ON) (mΩ)
12
1.2
0.8
8
0.4
6
0.0
2
4
6
8
10
-100
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2.0
I D = -250uA
1.6
Normalized VGS(th)
-IS(A)
16
12
T j =25 o C
o
T j =150 C
8
1.2
0.8
0.4
4
2.01E+09
0.0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679BMT
I D = -20 A
V DS = -15V
5000
6
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
6000
8
4000
C iss
3000
4
2000
2
1000
C oss
C rss
0
0
0
20
40
60
1
80
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
33
37
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this area
limited by RDS(ON)
100us
.
10
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
-ID (A)
13
1
10
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
Single Pulse
0.01
0.1
0.1
Duty factor=0.5
0.00001
100
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
80
V DS = -5V
-ID , Drain Current (A)
-ID , Drain Current (A)
80
60
40
T j =150 o C
60
40
20
20
o
2011082301
T j =25 C
T j = -55 o C
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 12. Drain Current v.s. Case Temperature
4
AP6679BMT
80
2
I D = -1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
60
40
20
0.4
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
50
T j =25 o C
RDS(ON) (mΩ)
40
30
.
20
-4.5V
10
V GS = -10V
0
0
20
40
60
80
100
120
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP6679BMT
MARKING INFORMATION
Part Number
6679B
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6