AOK20B120E1 1200V, 20A Alpha IGBT General Description • Latest AlphaIGBT (α IGBT) technology • Best in Class VCE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance TM with Diode Product Summary VCE IC (TC=100°C) 1200V 20A VCE(sat) (TC=25°C) 1.68V Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top View TO-247 C G AOK20B120E1 Orderable Part Number G C E E Package Type AOK20B120E1 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol V CE Collector-Emitter Voltage Gate-Emitter Voltage V GE Continuous Collector TC=25°C Current TC=100°C IC Form Tube Minimum Order Quantity 240 AOK20B120E1 1200 Units V ±30 40 V 20 A Pulsed Collector Current, Limited by TJmax Non repetitive peak collector currentA I Cpulse 80 A I CSM 200 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 80 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case 40 IF 20 I Fpulse 80 333 PD 167 T J , T STG TL Symbol R θ JA R θ JC R θ JC A A W -55 to 175 °C 300 °C AOK20B120E1 40 0.45 Units °C/W °C/W 1.6 °C/W Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs Rev.1.0: March 2015 www.aosmd.com Page 1 of 8 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) Collector-Emitter Saturation Voltage Conditions Min IC=1mA, VGE=0V, TJ=25°C TJ=25°C VGE=15V, IC=20A TJ=125°C 1200 - VGE=0V, IC=20A Diode Forward Voltage I GES g FS Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance VCE=1200V, VGE=0V Units - - V 1.68 2.1 - 2 - - 2.2 - TJ=25°C - 1.6 2 TJ=125°C - 1.68 TJ=175°C - 1.7 - 4.5 5.15 5.8 - - 10 TJ=25°C I CES Max TJ=175°C VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ V V TJ=125°C - - 500 TJ=175°C - - 5000 V µA VCE=0V, VGE=±30V - - ±100 VCE=20V, IC=20A - 23 - nA S - 1620 - pF - 90 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 28 - pF Qg Total Gate Charge - 60.5 - nC Q ge Gate to Emitter Charge - 14.5 - nC Q gc Gate to Collector Charge - 28 - nC Rg Gate resistance - 2.1 - Ω - 134 - ns - 98 - ns - 0.83 - mJ - 155 - ns - 184 - ns - 1.37 - mJ VGE=15V, VCE=960V, IC=20A VGE=0V, VCE=0V, f=1MHz SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy TJ=25°C VGE=15V, VCE=600V, IC=20A, RG=15Ω, Parasitic Inductance=150nH SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy TJ=175°C VGE=15V, VCE=600V, IC=20A, RG=15Ω, Parasitic Inductance=150nH THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2015 www.aosmd.com Page 2 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 200 20V 20V 120 17V 17V 100 IC (A) IC (A) 150 13V 15V 11V 90 15V 13V 9V 50 0 1 30 9V VGE= 7V 0 VGE=7V 0 2 3 4 5 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 6 0 7 1 2 3 4 5 VCE(V) Fig 2: Output Characteristic (Tj=175°C ) VCE=20V IF (A) IC (A) 7 -40°C 80 60 40 175°C 20 -40°C 0 4 60 25°C 40 175°C 20 25°C 7 0 10 13 0.5 VGE(V) Fig 3: Transfer Characteristic 1.0 1.5 2.0 2.5 3.0 3.5 4.0 150 175 VF (V) Fig 4: Diode Characteristic 7 5 4 6 IC=40A VGE(TH)(V) VCE(sat) (V) 6 100 80 3 IC=20A 2 1 5 4 3 IC=10A 0 2 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: March 2015 11V 60 www.aosmd.com 0 25 50 75 100 125 TJ (°C) Figure 6: VGE(TH) vs. Tj Page 3 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 Cies 1000 9 Capacitance (pF) VGE(V) 10000 VCE=960V IC=20A 6 3 Coes 100 10 Cres 1 0 0 10 20 30 40 50 60 Qg(nC) Fig 7: Gate-Charge Characteristics 0 70 5 10 15 20 25 30 VCE(V) Fig 8: Capacitance Characteristic 35 40 350 300 Power Disspation (W) 250 200 150 100 50 0 25 50 75 100 125 150 175 TCASE(°C) Fig 10: Power Disspation as a Function of Case 60 50 Current rating IC(A) 40 30 20 10 0 25 Rev.1.0: March 2015 50 75 100 125 150 TCASE(°C) Fig 11: Current De-rating 175 www.aosmd.com Page 4 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) 100 10 1 Tf 1000 100 10 1 0 10 20 30 40 IC (A) Figure 12: Switching Time vs. IC (Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω) 0 25 50 75 100 125 150 Rg (Ω) Figure 13: Switching Time vs. Rg (Tj=175°C,VGE=15V,VCE=600V,IC=20A) 175 10000 Td(off) Tf Switching Time (nS) 1000 100 10 1 0 Rev.1.0: March 2015 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=600V,IC=20A,Rg=15Ω) 200 www.aosmd.com Page 5 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 4 Eoff Switching Energy (mJ) SwitchIng Energy (mJ) Eoff 2 1 0 3 2 1 0 0 10 20 30 IC (A) Figure 15: Switching Loss vs. IC (Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω) 40 0 4 25 50 75 100 Rg (Ω) Figure 16: Switching Loss vs. Rg (Tj=175°C,VGE=15V,VCE=600V,IC=20A) 4 Eoff Eoff Switching Energ y (mJ) Switching Energy (mJ) 3 2 1 0 3 2 1 0 0 Rev.1.0: March 2015 125 25 50 75 100 125 150 175 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=600V,IC=20A,Rg=15Ω) 200 www.aosmd.com 100 200 300 400 500 600 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=175°C,VGE=15V,IC=20A,Rg=15Ω) 700 Page 6 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-02 3 1.E-03 1.E-04 VSD (V) ICE(S) (A) VCE=1200V 1.E-05 1.E-06 1.8 20A 1.2 5A VCE=960V 0.6 1.E-07 1.E-08 0 50 100 150 1 IF=1A 0 200 0 Temperature (°C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature ZθJC Normalized Transient Thermal Resistance 40A 2.4 25 50 75 100 125 150 175 Temperature (°C ) Fig 20: Diode Forward voltage vs. Junction Temperature D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 ZθJC Normalized Transient Thermal Resistance Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: March 2015 www.aosmd.com Page 7 of 8 Rev.1.0: March 2015 www.aosmd.com Page 8 of 8