Dual Silicon Carbide Power Schottky Diode CDBGBSC20650-G Reverse Voltage: 650V Forward Current: 20A RoHS Device TO-247 Features - Rated to 650V at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.640(16.26) 0.620(15.75) 0.209(5.30) 0.185(4.70) 0.244(6.20) 0.213(5.40) 0.144(3.65) 0.140(3.55) 4 0.216(5.49) 0.170(4.32) 0.845(21.46) 0.819(20.80) Circuit diagram 0.800(20.32) 0.780(19.81) C(4) 2 0.177(4.50) MAX. 1 3 0.084(2.13) 0.065(1.65) 0.031(0.80) 0.016(0.40) 0.055(1.40) 0.039(1.00) 0.098(2.49) 0.059(1.50) 0.433(11.00) 0.425(10.80) A(3) A(1) C(2) Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C, unless otherwise noted) Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Surge peak reverse voltage VRSM 650 V DC bolcking voltage VDC 650 V IF 33 15 10 A Parameter Conditions Continuous forward current TC = 25°C (Per leg) TC = 135°C (Per leg) TC = 155°C (Per leg) Repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 (Per leg) IFRM 50 A Non-repetitive peak forward surge current Tc = 25°C, tp = 10ms Half sine wave (Per leg) IFSM 100 A Power dissipation 109 TC = 25°C (Per leg) PTOT 48 TC = 110°C (Per leg) W Typical thermal resistance from Per leg RθJC 1.37 junction to case Per diode RθJC 0.69 TJ -55 ~ +175 °C TSTG -55 ~ +175 °C °C/W Operating junction temperature range Storage temperature range Company reserves the right to improve product design , functions and reliability without notice. REV: QW-BSCXX Page 1 Comchip Technology CO., LTD. Dual Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C, unless otherwise noted) Parameter Symbol Conditions IF = 10A, Tj = 25°C Forward voltage VF IF = 10A, Tj = 175°C VR = 650V, Tj = 25°C Reverse current IR VR = 650V, Tj = 175°C VR = 400V, Tj = 150°C QC = ∫ C(V) dv Total capacitive charge Typ. Min. QC VR Unit Max. 1.5 1.7 1.7 2.5 20 100 30 200 36 - 690 730 72 75 71 74 V μA nC 0 VR = 0V, Tj = 25°C, f = 1MHZ Total capacitance VR = 200V, Tj = 25°C, f = 1MHZ C VR = 400V, Tj = 25°C, f = 1MHZ pF RATING AND CHARACTERISTIC CURVES (CDBGBSC20650-G) Per Leg: Fig.1 - Forward IV Characteristics as a Function of TJ : 13 Fig.2 - Reverse IV Characteristics as a Function of TJ : 0.088 TJ=25°C 12 0.08 0.072 10 TJ=75°C 9 Reverse Current, IR (mA) Forward Current, IF (A) 11 TJ=125°C 8 TJ=175°C 7 6 5 4 3 0.056 0.048 TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0.04 0.032 0.024 0.016 2 0.008 1 0 0 0 0.5 1.0 1.5 2.0 2.5 300 400 500 600 700 800 Fig.4 - Capacitance VS. Reverse Voltage Capacitance Between Terminals, CJ (pF) 100 10% Duty 90 80 70 60 30% Duty 50 40 30 20 50% Duty 50 200 Fig.3 - Current Derating 110 25 100 Reverse Voltage, VR (V) 120 10 0 0 Forward Voltage, VF (V) 130 Forward Current, IF (A) 0.064 70% Duty 75 DC 100 125 150 175 750 700 600 500 400 300 200 100 0 0.01 Case Tempature, TC (°C) 0.1 1 10 100 1000 1000 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV: QW-BSCXX Page 2 Comchip Technology CO., LTD.