PD-96341
AUTOMOTIVE MOSFET
AUIRFR5305
AUIRFU5305
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
D
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
RDS(on) max.
G
ID
S
Description
0.065Ω
-31A
D
D
G
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
-55V
D
S
G
D-Pak
AUIRFR5305
D
S
I-Pak
AUIRFU5305
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
ch
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
ch
Units
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
dh
c
eh
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) ∗∗
Junction-to-Ambient ***
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
12/06/10
AUIRFR/U5305
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
Units
-55
–––
–––
-2.0
8.0
–––
–––
–––
–––
–––
-0.034
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.065
-4.0
–––
-25
-250
100
-100
V
V/°C
Ω
V
S
µA
nA
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -16A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = -20V
VGS = 20V
f
h
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
66
39
63
63
13
29
–––
–––
–––
–––
Units
nC
ns
–––
4.5
–––
–––
7.5
–––
–––
–––
–––
1200
520
250
–––
–––
–––
pF
Min.
Typ.
Max.
Units
nH
Conditions
ID = -16A
VDS = -44V
VGS = -10V See Fig.6 and 13
VDD = -28V
ID = -16A
RG = 6.8 Ω
RD = 1.6 Ω See Fig.10
fh
fh
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz,see Fig.5
D
G
S
h
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
–––
–––
-31
–––
–––
-110
–––
–––
–––
–––
71
170
-1.3
110
250
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = -16A, VGS = 0V
TJ = 25°C, IF = -16A
di/dt = 100A/µs
f
fh
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF5305 data and test conditions.
TJ ≤ 175°C
* *When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
*** Uses typical socket mount.
2
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AUIRFR/U5305
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
D PAK
I-PAK
N/A
Class M2 (200V)
( per AEC-Q101-002)
ESD
Human Body Model
(per AEC-Q101-001)
Charged Device
Model
RoHS Compliant
Class H1B (1000V)
Class C5 (1125V)
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR/U5305
1000
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
100
10
-4.5V
100
20µs PULSE WIDTH
Tc = 25°C
A
1
0.1
1
10
10
-4.5V
1
0.1
100
Fig 1. Typical Output Characteristics
2.0
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
4
5
6
7
8
9
10
10
A
100
Fig 2. Typical Output Characteristics
100
V DS = -25V
20µs PULSE WIDTH
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TC = 175°C
A
I D = -27A
1.5
1.0
0.5
V GS = -10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRFR/U5305
C, Capacitance (pF)
2000
Ciss
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
2500
Coss
1500
1000
Crss
500
0
1
10
100
I D = -16A
V DS = -44V
V DS = -28V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
-VDS , Drain-to-Source Voltage (V)
20
30
40
50
A
60
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-ID , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
VGS = 0V
10
0.4
0.8
1.2
1.6
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
2.0
100
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
A
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR/U5305
35
-ID , Drain Current (A)
RD
VDS
30
VGS
25
D.U.T.
RG
-
+
20
VDD
-10V
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
175
td(on)
tr
t d(off)
tf
VGS
10%
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR/U5305
-20V
+
-
D.U.T
RG
IAS
tp
DRIVER
VDD
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test
Circuit
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
700
TOP
600
BOTTOM
500
400
300
200
100
0
VDD = -25V
25
I AS
ID
-6.6A
-11A
-16A
50
75
100
125
150
A
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
D.U.T.
QGD
VGS
VG
-3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
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+VDS
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRFR/U5305
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
+
• dv/dt controlled by R G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
8
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AUIRFR/U5305
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR5305
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFR/U5305
I-Pak (TO-251AA) Package Outline
( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUFU5305
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U5305
D-Pak (TO-252AA) Tape & Reel Information
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRFR/U5305
Ordering Information
Base part
Package Type
AUIRFR5305
DPak
AUIRFU5305
IPak
12
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
Complete Part Number
AUIRFR5305
AUIRFR5305TR
AUIRF5305TRL
AUIRF5305TRR
AUIRFU5305
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AUIRFR/U5305
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and
to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and
/ or customer specific requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is
an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties
may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.
IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create
a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly
or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is
solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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13