polyfet rf devices F1020 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance 130 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 390 Watts Maximum Junction Temperature 0.45 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 20 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V RF CHARACTERISTICS ( 130 WATTS OUTPUT ) SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficienc VSWR MIN TYP MAX 10 60 Load Mismatch Toleranc 20:1 UNITS TEST CONDITIONS dB Idq = 2 A, Vds = 28.0 V, F = 400 MHz % Idq = 2 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 2 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson MIN TYP MAX 65 1 UNITS TEST CONDITIONS V Ids = 0.25 A, Vgs = 0V 5 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.5 A, Vgs = Vds 4 Mho Vds = 10V, Vgs = 5V Saturation Resistanc 0.25 Ohm Vgs = 20V, Ids = 20 A Idsat Saturation Curren 27.5 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 165 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 100 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1020 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1020 POUT vs PIN F=400 MHZ; IDQ=2.0A; VDS=28V F1B 5 DIE Capacitance vs Vds 12 250 1000 11 200 GAIN 10 Ciss 150 9 Coss 100 100 POUT 8 50 7 Crss Efficiency = 55% 6 0 0 5 10 15 20 25 30 35 40 10 PIN IN WATTS 0 POUT 5 10 15 GAIN 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1B 5 DIE IV CURVE F1B_5 DICE ID & GM VS VG 35 100 30 Id 25 10 20 15 1 Gm 10 5 0 0.1 0 2 4 6 8 10 12 14 16 18 20 0 2 4 Vds in Volts Vg = 2V Vg = 4V Vg = 6V 6 8 10 12 14 16 18 20 Vgs in Volts Vg = 8V S11 AND S22 SMITH CHART Vg = 10V Vg = 12V GM ID PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com