CPH6341 Ordering number : ENA1084 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6341 General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --30 V ±20 V --5 A ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --20 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --30 V VDS=--30V, VGS=0V --1 μA ±10 μA IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--3A ID=--3A, VGS=--10V 45 59 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--1.5A, VGS=--4.5V 71 100 mΩ ID=--1.5A, VGS=--4V 82 115 mΩ Cutoff Voltage Marking : YT --1.2 2.8 --2.6 4.8 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30508PE TI IM TC-00001220 No. A1084-1/4 CPH6341 Continued from preceding page. Parameter Symbol pF pF 75 pF td(on) tr See specified Test Circuit. 7.5 ns See specified Test Circuit. 26 ns td(off) tf See specified Test Circuit. 45 ns Reverse Transfer Capacitance Crss Turn-ON Delay Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. 35 ns VDS=--15V, VGS=--10V, ID=--5A VDS=--15V, VGS=--10V, ID=--5A 10 nC 2.0 nC VDS=--15V, VGS=--10V, ID=--5A IS=--5A, VGS=0V Package Dimensions 2.5 VDD= --15V 4 ID= --3A RL=5Ω VIN 0.2 0.6 V 0V --10V 0.15 2.9 D 0.05 1.6 2.8 --1.2 Switching Time Test Circuit VIN 5 nC --0.87 unit : mm (typ) 7018A-003 6 Unit max 105 Coss Fall Time typ 430 Ciss Output Capacitance Turn-OFF Delay Time min VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz Input Capacitance Rise Time Ratings Conditions VOUT PW=10μs D.C.≤1% 2 0.95 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 0.9 0.2 0.6 G 1 CPH6341 P.G 50Ω S SANYO : CPH6 VDS= --10V 5V . --3 --5 --3.0V --2.0 --1.5 --1.0 --2 --1 VGS= --2.5V --0.5 --3 Ta= 7 --2.5 --4 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT13379 0 --0.5 --1.0 --1.5 --2.0 25° --2 C 5°C --3.0 5°C Drain Current, ID -- A --3.5 ID -- VGS --6 --16.0 Drain Current, ID -- A --4.0 --6.0 V --4. 5V V --10.0V --4.5 --4 .0V ID -- VDS --5.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 IT13380 No. A1084-2/4 CPH6341 RDS(on) -- VGS 160 RDS(on) -- Ta 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 ID= --1.5A --3.0A 80 60 40 20 140 120 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 7 C 5° -2 =- Ta 1.0 °C 75 °C 25 7 5 3 0 20 40 60 80 100 120 140 160 IT13382 IS -- VSD --10 7 5 5 2 --20 Ambient Temperature, Ta -- °C ⏐yfs⏐ -- ID 3 --40 IT13381 VDS= --10V VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.2 5 7 --10 IT13383 Drain Current, ID -- A --0.6 --0.8 --1.0 --1.2 IT13384 Ciss, Coss, Crss -- VDS 1000 VDD= --15V VGS= --10V 100 --0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 2 f=1MHz 7 5 7 td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0 --60 --16 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 10 A --1.5 I D= , V .0 A = --4 --1.5 VGS I D= , V 5 . = --4 VGS --3.0A I , D= V 0 1 = -VGS 100 --25° C 140 Ta=7 5°C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C tf 3 2 tr 10 td(on) 7 Ciss 3 2 Coss Crss 100 7 5 5 3 2 --0.1 3 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 0 --10 3 2 Drain Current, ID -- A --7 --6 --5 --4 --3 --10 7 5 3 2 --1 3 2 2 3 4 5 6 7 Total Gate Charge, Qg -- nC 8 9 10 IT13387 --30 IT13386 PW≤10μs 10 ID= --5A 1m DC --1.0 7 5 --0.1 7 5 1 --25 IDP= --20A 10 ms 0m s 3 2 --2 0 --20 --15 ASO 5 --8 0 --10 Drain-to-Source Voltage, VDS -- V VDS= --15V ID= --5A --9 --5 IT13385 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 7 0μ s s 10 op er Operation in this area is limited by RDS(on). ati on Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT13388 No. A1084-3/4 CPH6341 PD -- Ta Allowable Power Dissipation, PD -- W 2.0 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13389 Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. PS No. A1084-4/4