ON NTMFS4C05N Power mosfet Datasheet

NTMFS4C05N
Power MOSFET
30 V, 78 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
Applications
30 V
78 A
5.0 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
D (5−8)
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
21.7
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.57
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
34.8
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
Continuous Drain
Current RqJA
(Note 2)
TA = 80°C
TA = 80°C
TA = 25°C
S (1,2,3)
PD
ID
6.6
11.9
8.9
PD
1
TC = 25°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
33
W
TA = 25°C, tp = 10 ms
IDM
174
A
ID
TC =80°C
0.77
78
A
58
80
A
TJ,
TSTG
−55 to
+150
°C
IS
30
A
Drain to Source dV/dt
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 20 V, IL = 41 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS
84
mJ
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
4C05N
AYWZZ
D
D
W
IDmax
Source Current (Body Diode)
D
S
SO−8 FLAT LEAD
S
CASE 488AA
S
STYLE 1
G
A
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
MARKING
DIAGRAMS
W
TA = 25°C
Operating Junction and Storage
Temperature
N−CHANNEL MOSFET
26.0
TA = 80°C
Current Limited by Package
G (4)
16.3
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
ID MAX
3.4 mW @ 10 V
• CPU Power Delivery
• DC−DC Converters
Steady
State
RDS(ON) MAX
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4C05NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C05NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 20 V, IL = 29 A, EAS = 42 mJ.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 7
1
Publication Order Number:
NTMFS4C05N/D
NTMFS4C05N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
3.8
Junction−to−Ambient – Steady State (Note 4)
RqJA
48.6
Junction−to−Ambient – Steady State (Note 5)
RqJA
161.7
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
19
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
12
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
1.3
VGS(TH)/TJ
RDS(on)
5.1
mV/°C
VGS = 10 V
ID = 30 A
2.7
3.4
VGS = 4.5 V
ID = 30 A
4.0
5.0
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
Gate Resistance
RG
TA = 25°C
68
0.3
1.0
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1972
VGS = 0 V, f = 1 MHz, VDS = 15 V
1215
pF
59
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
14
Threshold Gate Charge
QG(TH)
3.3
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
5.0
Gate Plateau Voltage
VGP
3.1
V
30
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.030
6.0
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
11
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
32
21
7.0
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2
ns
NTMFS4C05N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
8.0
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26
ns
26
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.77
TJ = 125°C
0.62
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
40.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
20.3
ns
19.9
30.2
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C05N
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
TJ = 25°C
3.8 V
3.6 V
4 V to 6.5 V
ID, DRAIN CURRENT (A)
140
130 10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
3
5
4
140
130 VDS = 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
2.0
2.5
3.0
3.5
4.0
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
4.0
5.0
6.0
7.0
8.0
9.0
10
4.5
0.008
TJ = 25°C
0.007
0.006
0.005
VGS = 4.5 V
0.004
VGS = 10 V
0.003
0.002
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1.7
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
1.5
Figure 1. On−Region Characteristics
Figure 3. On−Resistance vs. VGS
1.5
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.4
1.3
1.2
1.1
1.0
1000
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4C05N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
2750
2500
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
3000
2250
Ciss
2000
1750
1500
1250
1000
Coss
750
500
250
0
Crss
0
5
10
15
20
25
30
QT
8
6
4
Qgd
Qgs
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
0
0
4
8
12
16
24
28
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
32
20
VDD = 15 V
ID = 15 A
VGS = 10 V
IS, SOURCE CURRENT (A)
18
td(off)
td(on)
100
tr
tf
10
VGS = 0 V
16
14
12
10
8
6
4
TJ = 125°C
TJ = 25°C
2
1
1
10
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
10 ms
1 ms
10 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
10
0.01
0.01
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100 ms
0.1
0.5
RG, GATE RESISTANCE (W)
100
1
0
0.4
100
1000
ID, DRAIN CURRENT (A)
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
45
ID = 29 A
40
35
30
25
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4C05N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
120
ID, DRAIN CURRENT (A)
100
GFS (S)
80
60
40
20
0
0
10
20
30
40
50
60
70
TA = 25°C
1
1.E−07
80
TA = 85°C
10
1.E−06
1.E−05
1.E−04
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
1.E−03
NTMFS4C05N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
0.10 C
SIDE VIEW
DETAIL A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.495
0.10
b
C A B
0.05
c
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15
5.00
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
4.560
2X
8X
1.530
e/2
e
L
1
4
3.200
K
4.530
E2
PIN 5
(EXPOSED PAD)
L1
1.330
2X
M
0.905
1
0.965
G
D2
4X
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NTMFS4C05N/D