BWTECH MS14N60 900v n-channel mosfet Datasheet

MS14N60
900V N-Channel MOSFET
Description
The MS14N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
14
A
Drain Current -Continuous (TC=100°C)
8.4
A
IDM
Drain Current -Pulsed
56
A
IAR
Avalanche Current
14
A
EAS
Single Pulsed Avalanche Energy
53
mJ
EAR
Repetitive Avalanche Energy
16
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
TJ
Storage Temperature
150
°C
Power Dissipation (TC=25°C)
60
W
0.35
W/°C
ID
PD
Derate above 25C
• Drain current limited by maximum junction temperature
Publication Order Number: [MS14N60]
© Bruckewell Technology Corporation Rev. A -2014
MS14N60
900V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TSTG
Operating Junction and Storage Temperature
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Value
Unit
-55 to +150
°C
300
°C
Note:
1. Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=14A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Thermal Resistance , Junction-to-Case
--
2.58
RθJA
Thermal Resistance , Junction-to-Ambient
--
62.5
Units
°C/W
Static Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
4.0
V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
2.0
BVDSS
Drain-Source Breakdown Voltage
VGS =0 V , ID = 250μA
600
--
--
V
△BVDSS /△TJ
Breakdown Voltage Temperature
ID = 250μA, Referenced to
25°C
--
0.7
--
V/°C
IDSS
Zero Gate Voltage Drain Current
--
--
VDS = ±30
--
--
±100
nA
VGS = 10 V , ID = 8.4 A
--
--
0.55
Ω
IGSS
*RDS(ON)
Coefficient
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Dynamic Characteristics
Symbol
Parameter
CISS
VDS = 600 V , VGS = 0 V
VDS = 480 V , TC = 125°C
Test Conditions
Input Capacitance
VDS = 25 V, VGS = 0 V,
1
10
uA
Min
Typ.
Max.
Units
--
2222
--
pF
--
180
--
pF
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
--
17
--
pF
td(on)
Turn-On Time
--
16
--
ns
tr
Turn-On Time
VDD = 250 V, ID =14 A,
--
30
--
ns
td(off)
Turn-Off Delay Time
VGS = 10 V , RG =9.1 Ω
--
48
--
ns
tf
Turn-Off Fall Time
--
34
--
ns
Publication Order Number: [MS14N60]
f=1.0MHz
© Bruckewell Technology Corporation Rev. A -2014
MS14N60
900V N-Channel MOSFET
Dynamic Characteristics
Symbol
Parameter
Qg
Test Conditions
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V,ID =14 A,
VGS = 10 V
Min
Typ.
Max.
Units
--
40
--
nC
--
10
--
nC
--
15
--
nC
Min
Typ.
Max.
Units
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS
VD = VG = 0,
--
--
14
ISM
VS = 1.3 V
--
--
56
VSD
IS = 14 A , VGS = 0 V
--
--
1.5
V
trr
IS =14 A , VGS = 0 V
--
393
--
ns
Qrr
diF/dt=100A/μs
--
3529
--
μC
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Publication Order Number: [MS14N60]
© Bruckewell Technology Corporation Rev. A -2014
MS14N60
900V N-Channel MOSFET
Disclaimer
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Publication Order Number: [MS14N60]
© Bruckewell Technology Corporation Rev. A -2014
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