AOSMD AOD421 P-channel enhancement mode field effect transisto Datasheet

AOD421
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD421 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for load switching. It is ESD
protected. Standard Product AOD421 is Pb-free
(meets ROHS & Sony 259 specifications). AOD421L
is a Green Product ordering option. AOD421 and
AOD421L are electrically identical.
VDS (V) = -20V
ID = -12.5 A (VGS = -10V)
RDS(ON) < 75mΩ (VGS = -10V)
RDS(ON) < 95mΩ (VGS = -4.5V)
RDS(ON) < 145mΩ (VGS = -2.5V)
ESD Rating: 2000V HBM
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TA=25°C
C
Power Dissipation
Junction and Storage Temperature Range
2
Alpha & Omega Semiconductor, Ltd.
W
1.33
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
9.4
TJ, TSTG
Thermal Characteristics
Parameter
A
-30
PDSM
TA=70°C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
B
Maximum Junction-to-Case
V
18.8
PD
TC=100°C
TA=25°C
A
±12
-8.9
ID
IDM
TC=25°C
Power Dissipation B
Units
V
-12.5
TA=70°C
Pulsed Drain Current
Maximum
-20
RθJA
RθJC
°C
Typ
Max
Units
23
50
6
28
60
8
°C/W
°C/W
°C/W
AOD421
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=-250µA, VGS=0V
-20
-0.5
TJ=55°C
-2.5
µA
VDS=0V, VGS=±12V
±10
µA
-1.4
V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.7
VGS=-4.5V, VDS=-5V
-15
VGS=-10V, ID=-12.5A
TJ=125°C
VGS=-4.5V, ID=-3A
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
75
95
mΩ
145
mΩ
mΩ
S
-0.81
V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
75
105
8.8
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
61
83
110
VSD
Crss
A
VDS=-5V, ID=-12.5A
Forward Transconductance
Output Capacitance
-0.9
VGS=-2.5V, ID=-1A
gFS
Coss
µΑ
±1
On state drain current
IS
Units
VDS=0V, VGS=±10V
ID(ON)
Static Drain-Source On-Resistance
Max
V
VDS=-16V, VGS=0V
VGS(th)
RDS(ON)
Typ
-1
512
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V,
ID=-12.5A
VGS=-10V, VDS=-10V, RL=0.75Ω,
RGEN=3Ω
-8.5
A
620
pF
77
pF
62
pF
9.2
13
Ω
4.6
nC
0.9
nC
2.1
nC
5.2
ns
38
ns
17
ns
tf
Turn-Off Fall Time
31
ns
trr
Body Diode Reverse Recovery Time
IF=-12.5A, dI/dt=100A/µs
19
Qrr
Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs
6.3
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
40
-10.0V
VDS=-5V
30
-5.0V
25
-4.0V
20
-3.0V
15
-2.5V
10
-2.0V
8
6
-ID(A)
-ID (A)
35
4
125°C
2
25°C
VGS=-1.5V
5
0
0
0
1
2
3
4
5
0
0.5
160
1.5
2
2.5
3
3.5
1.6
ID=-3A, VGS=-4.5V
140
Normalized On-Resistance
VGS=-2.5V
120
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
100
VGS=-4.5V
80
60
VGS=-10V
40
ID=-12.5A, VGS=-10V
1.4
1.2
ID=-1A, VGS=-2.5V
1.0
20
0
2
4
6
8
10
12
0.8
14
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
200
ID=-12.5A
180
1E+00
125°C
160
1E-01
125°C
140
-IS (A)
RDS(ON) (mΩ)
25
120
100
25°C
1E-02
1E-03
1E-04
80
1E-05
60
25°C
1E-06
40
0.0
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOD421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
ID=-12.5A
Ciss
600
Capacitance (pF)
-VGS (Volts)
4
3
2
1
400
200
Coss
Crss
0
0
1
2
3
4
5
0
6
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
80
70
Power (W)
ID (Amps)
DC
20
TJ(Max)=175°C
TA=25°C
90
100µs
1ms
1
60
50
40
30
20
RDS(ON)
limited
10
0
0.0001
0.1
ZθJA Normalized Transient
Thermal Resistance
15
100
10µs
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=175C, TA=25°C
0.1
5
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=8°C/W
100
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-tocase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOD421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
14
18
Power Dissipation (W)
Current rating ID(A)
12
10
8
6
4
2
16
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
0
175
0
25
TCASE (°C)
Figure 12: Current De-rating (Note B)
100
10
Power (W)
ID (Amps)
1ms
100m
1
1s
10s
DC
1
10
175
30
20
0
0.001
100
VDS (Volts)
Figure 14: Maximum Forward Biased Safe
Operating Area (Note H)
ZθJA Normalized Transient
Thermal Resistance
150
10
0.1
1
125
TA=25°C
40
100µs
10
100
50
10µs
0.1
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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