Kexin NZT753 Pnp current driver transistor Datasheet

Transistors
SMD Type
PNP Current Driver Transistor
NZT753
SOT-223
Unit: mm
+0.2
3.50-0.2
6.50
Features
+0.1
3.00-0.1
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
3 Emitter
+0.1
0.70-0.1
2.9
4 Collector
4.6
Absolute Maximum Ratings Ta = 25
unless otherwise noted
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
-100
V
Collector-Base Voltage
VCBO
-120
V
Emitter-Base Voltage
VEBO
-5
V
IC
-4
A
TJ, TSTG
- 55 to +150
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
PD
Derate above 25
Thermal Resistance, Junction to Ambient
Electrical Characteristics Ta = 25
Parameter
RèJA
1.2
W
9.7
mW/
103
/W
unless otherwise stated
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
BVCEO
IC = -10mA, IB = 0
-100
V
Collector-Base Breakdown Voltage
BVCBO
IC = -100ìA, IE = 0
-120
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -100ìA, IC = 0
-5.0
V
ICBO
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
IEBO
DC Current Gain
hFE
VCB = -100V, IE = 0
-0.1
ìA
TA = 100
-10
ìA
VEB = -4V, IC = 0
-0.1
ìA
VCE = -2.0V, IC = -50mA
70
VCE = -2.0V, IC = -500mA
100
VCE = -2.0V, IC = -1.0A
55
300
Collector-Emitter Saturation Voltage
VCE(sat)
IC = -1.0A, IC = -50mA
-0.3
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = -1.0A, IB = -100mA
-1.25
V
Base-Emitter On Voltage
VBE(on)
VCE = -2.0V, IC = -1.0A,
-1.0
V
Transition Frequency
*Pulse Test: Pulse Width
fT
300ìs, Duty Cycle
VCE = -5V, IC = -100mA, f = 100MHz
75
MHz
2.0%
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