Transistors SMD Type PNP Current Driver Transistor NZT753 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 3 Emitter +0.1 0.70-0.1 2.9 4 Collector 4.6 Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO -100 V Collector-Base Voltage VCBO -120 V Emitter-Base Voltage VEBO -5 V IC -4 A TJ, TSTG - 55 to +150 Collector Current - Continuous Operating and Storage Junction Temperature Range Total Device Dissipation PD Derate above 25 Thermal Resistance, Junction to Ambient Electrical Characteristics Ta = 25 Parameter RèJA 1.2 W 9.7 mW/ 103 /W unless otherwise stated Symbol Testconditons Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC = -10mA, IB = 0 -100 V Collector-Base Breakdown Voltage BVCBO IC = -100ìA, IE = 0 -120 V Emitter-Base Breakdown Voltage BVEBO IE = -100ìA, IC = 0 -5.0 V ICBO Collector-Base Cutoff Current Emitter-Base Cutoff Current IEBO DC Current Gain hFE VCB = -100V, IE = 0 -0.1 ìA TA = 100 -10 ìA VEB = -4V, IC = 0 -0.1 ìA VCE = -2.0V, IC = -50mA 70 VCE = -2.0V, IC = -500mA 100 VCE = -2.0V, IC = -1.0A 55 300 Collector-Emitter Saturation Voltage VCE(sat) IC = -1.0A, IC = -50mA -0.3 V Base-Emitter Saturation Voltage VBE(sat) IC = -1.0A, IB = -100mA -1.25 V Base-Emitter On Voltage VBE(on) VCE = -2.0V, IC = -1.0A, -1.0 V Transition Frequency *Pulse Test: Pulse Width fT 300ìs, Duty Cycle VCE = -5V, IC = -100mA, f = 100MHz 75 MHz 2.0% www.kexin.com.cn 1