PolarHVTM HiPerFET Power MOSFET IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS = 800 V = 12 A ≤ 0.85 Ω ≤ 250 ns VDSS ID25 RDS(on) trr N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±30 V VGSM Tranisent ±40 V ID25 TC = 25°C 12 A IDM TC = 25°C, pulse width limited by TJM 36 A IAR TC = 25°C 6 A EAR TC = 25°C 30 mJ EAS TC = 25°C 0.8 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω 10 V/ns PD Maximum Ratings TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-247, TO-3P) FC Mounting force Weight PLUS220 & PLUS220SMD T0-3P TO-247 TO-3P (IXFQ) 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C G D PLUS220 (IXFV) G D S 800 VGS(th) VDS = VGS, ID = 2.5 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V G = Gate S = Source TJ = 125°C D (TAB) z z V 5.5 V ±100 nA 25 250 μA μA 0.85 Ω D = Drain TAB = Drain Features z VGS = 10 V, ID = 0.5 ID25 , Note 1 © 2006 IXYS All rights reserved g g g Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 250 μA S N/lb. 4.0 5.5 6.0 BVDSS D (TAB) PLUS220 SMD (IXFV...S) 1.13/10 Nm/lb.in. (PLUS220,PLUS220SMD) 11..65/2.5..15 D (TAB) S G Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) D (TAB) International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99476E(07/06) IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, Note 1 8 Ciss 14 S 2800 pF 1 210 pF Crss 19 pF td(on) 23 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 26 ns td(off) RG = 5 Ω (External) 70 ns tf 25 ns Qg(on) 51 nC 13 nC 19 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-247 (IXFH) Outline 0.35 (TO-247 & TO-3P) °C/W 0.21 Source-Drain Diode °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive 36 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr Qrm Irm IS = 12 A, VGS = 0 V -di/dt = 100 A/μs, VR = 100 V 250 ns μC Α 200 0.8 4 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % TO-3P (IXFQ) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte r is tics @ 25 º C @ 25º C 12 24 V GS = 10V 7V 20 8 I D - Amperes I D - Amperes V GS = 10V 7V 10 6V 6 4 16 12 6V 8 4 2 5V 5V 0 0 0 2 4 6 8 10 0 12 3 6 9 V D S - V olts 18 21 24 27 30 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe r atur e @ 125 º C 12 2.6 V GS = 10V 2.4 R D S ( o n ) - Normalized 7V 10 I D - Amperes 15 V D S - V olts Fig. 3. Output Char acte r is tics 6V 8 6 4 2 5V V GS = 10V 2.2 2 1.8 1.6 I D = 12A 1.4 I D = 6A 1.2 1 0.8 0 0.6 0 4 8 12 16 20 -50 24 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e Fig. 5. RDS(on) Nor m alize d to 0.5 ID25 V alue vs . ID 2.5 14 2.3 V GS = 10V 12 TJ = 125 º C 2.1 10 I D - Amperes R D S ( o n ) - Normalized 12 1.9 1.7 1.5 8 6 4 1.3 TJ = 25 º C 1.1 2 0.9 0 0 2 4 6 8 10 12 14 16 I D - A mperes © 2006 IXYS All rights reserved 18 20 22 24 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Fig. 8. Tr ans conductance 14 21 12 18 TJ = 125 º C - Siemens 24 25 º C fs 16 -40 º C g I D - Amperes Fig. 7. Input Adm ittance 10 8 6 15 12 9 6 2 3 0 0 4.5 5 5.5 6 25 º C 125 º C 4 4 TJ = -40 º C 0 6.5 2 4 6 V G S - V olts Fig. 9. Sour ce Cur r e nt vs . Sour ce -To-Dr ain V oltage 10 12 14 16 18 Fig. 10. Gate Char ge 10 35 9 V DS = 400V 8 I D = 6A 7 I G = 10m A 30 V G S - Volts 25 I S - Amperes 8 I D - A mperes 20 TJ = 125 º C 15 TJ = 25 º C 10 6 5 4 3 2 5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 V S D - V olts 10000 Capacitance - picoFarads C iss 1000 C oss 100 C rss 10 0 5 10 15 20 25 5 10 15 Q Fig. 11. Capacitance f = 1MH z 0 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 20 G 25 30 35 40 - nanoCoulombs 45 50 55 IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Fig. 12. Maximum Transient Thermal Resistance R ( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds PLUS220 (IXFV) Outline PLUS220SMD (IXFV_S) Outline © 2006 IXYS All rights reserved 1 10