Ordering number : EN6793B CPH5504 Bipolar Transistor http://onsemi.com 50V, 3A, Low VCE(sat) NPN Dual CPH5 Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, flash Features • • • Composite type with 2 NPN transistors in one package facilitating high-density mounting The CPH5504 is composed of 2 chips each equivaient to the CPH3205 Ultrasmall package facilitates miniaturization in end products. (mounting height : 0.9mm) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCES Collector-to-Emitter Voltage Collector-to-Emitter Voltage VCEO VEBO IC Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP IB PC Base Current Collector Dissipation Total Power Dissipation 100 V 100 V 50 V 6 V 3 A 6 Junction Temperature PT Tj Storage Temperature Tstg A 600 mA Mounted on a ceramic board (600mm2×0.8mm) 0.9 W Mounted on a ceramic board (600mm2×0.8mm) 1.2 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-009 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5504-TL-E 0.15 2.9 3 Packing Type : TL Marking 0.9 1 0.95 2 LOT No. ED 0.05 1.6 0.2 0.6 2.8 0.2 0.6 Package Dimensions TL 0.4 1 : Collector 2 : Collector 3 : Base 4 : Emitter Common 5 : Base Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 August, 2013 2 62712 TKIM/62005EA MSIM TB-00001409/21401 TSIM TA-2946 No.6793-1/7 CPH5504 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A hFE1 VCE=2V, IC=100mA VCE=2V, IC=3A hFE2 Gain-Bandwidth Product fT Cob Output Capacitance VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings min typ Unit max 200 1 μA 1 μA 560 70 VCE=10V, IC=500mA Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Conditions 380 MHz VCB=10V, f=1MHz IC=1A, IB=50mA 13 80 120 mV pF IC=2A, IB=100mA IC=2A, IB=100mA 140 210 mV 0.88 1.2 V IC=10μA, IE=0A 100 V V(BR)CES V(BR)CEO IC=100μA,RBE=0Ω 100 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 35 ns 300 ns 22 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 OUTPUT INPUT RB VR 50Ω RL + + 100μF 470μF VBE= --5V VCC=25V 10IB1= --10IB2=IC=1A Ordering Information Device CPH5504-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No.6793-2/7 CPH5504 IC -- VCE Collector Current, IC -- A VCE=2V 80mA A 4.0 60mA 3.5 40mA 2.5 3.0 2.5 20mA 2.0 10mA 1.5 5.0mA 2.0 Ta=75°C 25°C --25°C 100m 4.5 IC -- VBE 3.0 Collector Current, IC -- A 5.0 1.5 1.0 1.0 0.5 0.5 IB=0mA 0 0 0.4 0.8 1.2 1.6 0 Collector-to-Emitter Voltage, VCE -- V Gain Bandwidth Product, f T -- MHz DC Current Gain, hFE Ta=75°C 3 --25°C 25°C 100 7 5 3 2 10 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 0.8 1.0 IT02465 VCE=10V 7 5 3 2 100 7 5 3 2 0.01 3 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A IT02466 Cob -- VCB 100 0.6 f T -- IC 1000 5 2 0.4 Base-to-Emitter Voltage, VBE -- V VCE=2V 7 0.2 IT02464 hFE -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 10 7 5 5 IC / IB=20 7 5 3 IT02467 VCE(sat) -- IC 1000 f=1MHz 7 Output Capacitance, Cob -- pF 0 2.0 5 3 2 100 °C 75 = Ta 7 5 °C 25 °C 25 -- 3 2 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 Ta 7 5 5 =7 °C °C 25 --25 3 °C 2 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 5 2 3 5 IT02470 7 0.1 2 3 5 7 1.0 2 3 5 IT02469 VBE(sat) -- IC 5 5 100 3 Collector Current, IC -- A IC / IB=50 7 2 IT02468 VCE(sat) -- IC 1000 10 0.01 10 0.01 5 7 IC / IB=50 3 2 1000 Ta= --25°C 7 75°C 5 25°C 3 2 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT02471 No.6793-3/7 CPH5504 ASO 1m s op s ati on 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (600mm2×0.8mm) 1unit 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 3 1.0 To t 0.9 al 0.8 1u nit Di ss ip ati on 0.6 0.4 0.2 Mounted on a ceramic board (600mm2×0.8mm) 0 5 7 IT02472 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02473 PC(TR2) -- PC(TR1) 1.0 Collector Dissipation, PC(TR2) -- W s 0m er 3 2 ms s 0μ DC 10 50 10 1.0 7 5 1.2 Collector Dissipation, PC -- W IC=3A 3 2 PC -- Ta 1.4 ICP=6A 0μ 10 Collector Current, IC -- A 10 7 5 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Mounted on a ceramic board (600mm2×0.8mm) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Dissipation, PC(TR1) -- W 0.9 1.0 IT02474 No.6793-4/7 CPH5504 Embossed Taping Specification CPH5504-TL-E No.6793-5/7 CPH5504 Outline Drawing CPH5504-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.6793-6/7 CPH5504 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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