CYStech Electronics Corp. Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BC857N3 Description • The BC857N3 is designed for general purpose switching and amplification applications. • Complementary to BC847N3. • Pb-free lead plating and halogen-free package Features • Low current, IC(max)=-200mA • Low voltage, BVCEO=-50V. Symbol Outline BC857N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BC857N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BC857N3 CYStek Product Specification Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (Pulse) Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IBP PD Tj Tstg Limits -50 -50 -6 -200 -500 -200 250 -55~+150 -55~+150 Unit V V V mA mA mA mW °C °C Thermal Data Parameter Thermal Resistance, Junction-to-ambient, max Symbol RθJA Value 500 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *VBE(on) 1 *VBE(on) 2 *hFE fT Cob BC857N3 Min. -50 -50 -6 -600 420 100 - Typ. -72 -220 -700 -830 -640 3.7 Max. -15 -100 -200 -400 -750 -770 800 - Unit V V V nA nA mV mV mV mV mV mV MHz pF Test Conditions IC=-100μA IC=-1mA IE=-10μA VCB=-30V VEB=-6V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA VCE=-5V, IC=-2mA VCE=-5V, IE=-10mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.25 0.18 0.16 0.14 -IC, Collector Current(A) -IC, Collector Current(A) 5mA 1mA 500uA 400uA 300uA 0.12 0.1 0.08 200uA 0.06 -IB=100uA 0.04 0.2 2.5mA 1.5mA 0.15 1mA -IB=500uA 0.1 0.05 0.02 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 0.6 0.4 50mA 20mA 0.35 0.5 -IC, Collector Current(A) -IC, Collector Current(A) 6 Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 10mA 0.3 6mA 0.25 4mA -IB=2mA 0.2 0.15 0.1 0.05 25mA 20mA 0.4 0.3 10mA -IB=5mA 0.2 0.1 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 10000 Tj=125°C 75°C 25°C 0°C -40°C 100 HFE, Current Gain 10000 1000 6 Current Gain vs Collector Current Current Gain vs Collector Current HFE, Current Gain 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Tj=125°C 75°C 25°C 0°C -40°C 1000 100 -VCE=2V -VCE=1V 10 10 0.01 BC857N3 0.1 1 10 -IC, Collector Current(mA) 100 1000 0.01 0.1 1 10 100 -IC, Collector Current(mA) 1000 CYStek Product Specification Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Current Gain vs Collector Current Current Gain vs Collector Current 10000 Tj=125°C 75°C 25°C 0°C -40°C 1000 HFE, Current Gain HFE, Current Gain 10000 100 Tj=125°C 75°C 25°C 0°C -40°C 1000 100 - VCE=5V - VCE=6V 10 10 0.01 0.1 1 10 100 1000 0.01 -IC, Collector Current(mA) 10 100 1000 Saturation Voltage vs Collector Current 1000 1000 VCESAT@IC=50IB -VCESAT, Saturation Voltage(mV) -VCESAT, Saturation Voltage(mV) 1 -IC, Collector Current(mA) Saturation Voltage vs Collector Current -40°C 0°C 25°C 75°C 125°C 100 10 VCESAT@IC=100IB -40°C 0°C 25°C 75°C 125°C 100 10 0.1 1 10 100 -IC, Collector Current(mA) 1000 1 10 100 -IC, Collector Current(mA) 1000 10000 1000 -VBESAT,Saturation Voltage(mV) VCESAT@IC=150IB -40°C 0°C 25°C 75°C 125°C 100 0.1 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current -VCESAT, Saturation Voltage(mV) 0.1 VBESAT@IC=10IB -40°C 0°C 25°C 75°C 125°C 1000 100 10 0.1 BC857N3 1 10 100 -IC, Collector Current(mA) 1000 0.1 1 10 100 -IC, Collector Current(mA) 1000 CYStek Product Specification Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) On Voltage vs Collector Current Transition Frequency vs Collector Current 1000 10000 -40°C 0°C 25°C 75°C 125°C fT, Transition Frequency(MHz) -VBEON, On Voltage(mV) VBEON@VCE=-5V 1000 100 -VCE=12V 100 10 0.1 1 10 100 -IC, Collector Current(mA) 1000 0.1 Capacitance vs Reverse-biased Voltage 100 Power Derating Curve 100 300 PD, Power Dissipation(mW) Capacitance(pF) 1 10 -IC, Collector Current(mA) Cib 10 Cob 250 200 150 100 50 0 1 0.1 1 10 -VR, Reverse-biased Voltage(V) 100 0 50 100 150 200 TA, Ambient Temperature(℃) Recommended Soldering Footprint BC857N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 6/8 Reel Dimension Carrier Tape Dimension BC857N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BC857N3 CYStek Product Specification Spec. No. : C306N3 Issued Date : 2015.04.09 Revised Date : Page No. : 8/8 CYStech Electronics Corp. SOT-23 Dimension Marking: Device Code 3G Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead :Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BC857N3 CYStek Product Specification