Micross AS5SP256K36DQ-40/IT Global write support Datasheet

COTS PEM
SSRAM
AS5SP256K36
•
81
82
84
83
87
85
86
89
88
91
90
92
95
93
94
96
97
98
99
100
80
2
79
3
78
4
77
5
76
DQc
DQc
6
75
7
74
DQc
DQc
8
73
9
72
VSSQ
VDDQ
10
71
11
70
DQc
12
69
DQc
NC
VDD
13
68
NC
VSS
DQd
16
65
17
64
18
63
DQd
19
62
VDDQ
VSSQ
20
61
21
60
DQd
22
59
DQd
DQd
23
58
24
57
VSSQ
DQa
DQa
DQa
DQd
VSSQ
VDDQ
DQd
DQd
DQPd
25
56
DQa
26
55
27
54
28
53
29
52
VSSQ
VDD
DQa
DQa
30
51
DQP
14
67
VDD
VSSQ
DQb
DQb
DQb
DQb
VSSQ
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDD
50
49
48
47
46
45
44
43
42
41
66
DQP
DQb
DQb
VDD
NC*
A
A
A
A
A
A
A
A
40
39
38
37
35
34
33
36
SSRAM [SPB]
15
32
•
•
•
•
•
•
•
Data Contention.
Two Cycle load, Single Cycle Deselect
Asynchronous Output Enable (OE\)
Three Pin Burst Control (ADSP\, ADSC\, ADV\)
3.3V Core Power Supply
3.3V/2.5V IO Power Supply
JEDEC Standard 100 pin TQFP Package,
Available in Industrial, Enhanced, and Mil-Temperature
Operating Ranges
RoHs compliant options available
1
DQc
DQc
VDDQ
VSSQ
31
FEATURES
• Synchronous Operation in relation to the input Clock
• 2 Stage Registers resulting in Pipeline operation
• On chip address counter (base +3) for Burst operations
• Self-Timed Write Cycles
• On-Chip Address and Control Registers
• Byte Write support
• Global Write support
• On-Chip low power mode [powerdown] via ZZ pin
• Interleaved or Linear Burst support via Mode pin
• Three Chip Enables for ease of depth expansion without
DQPc
MODE
A
A
A
A
A1
A0
NC*
NC*
VSS
9.0Mb, 256K x 36, Synchronous SRAM
Pipeline Burst, Single Cycle Deselect
A
A
CE1\
CE2
BWd\
BWc\
BWb\
BWa\
CE3\
VDD
VSS
CLK
GW\
BWE\
OE\
ADSC\
ADSP\
ADV\
A
A
Plastic Encapsulated Microcircuit
FAST ACCESS TIMES
Parameter
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol
tCYC
tCD
tOE
200Mhz
5.0
3.0
3.0
166Mhz
6.0
3.5
3.5
133Mhz
7.5
4.0
4.0
Units
ns
ns
ns
GENERAL DESCRIPTION
The AS5SP256K36 is a 9.0Mb High Performance
Synchronous Pipeline Burst SRAM, available in multiple
temperature screening levels, fabricated using High
Performance CMOS technology and is organized as a
256K x 36. It integrates address and control registers,
a two (2) bit burst address counter supporting four (4)
double-word transfers. Writes are internally self-timed
and synchronous to the rising edge of clock.
BLOCK DIAGRAM
OE\
ZZ
CLK
CE1\
CE2
I/O Gating and Control
CE3\
BWE\
BWx\
CONTROL
BLOCK
GW\
ADV\
ADSC\
ADSP\
MODE
A0-Ax
AS5SP256K36
Rev. 2.2 10/13
BURST CNTL.
Address
Registers
Row
Decode
Memory Array
x36
SBP
❑ Synchronous Pipeline
Burst
❋ Two (2) cycle load
❋ One (1) cycle
de-select
❋ One (1) cycle latency
on Mode change
Output
Register
Output
Driver
DQx, DQP
Input
Register
Column
Decode
The AS5SP256K36 includes advanced control options
including Global Write, Byte Write as well as an
Asynchronous Output enable. Burst Cycle controls
are handled by three (3) input pins, ADV\, ADSP\ and
ADSC\. Burst operation can be initiated with either the
Address Strobe Processor (ADSP\) or Address Strobe
controller (ADSC\) inputs. Subsequent burst addresses
are generated internally in the system’s burst sequence
control block and are controlled by Address Advance
(ADV\) control input.
Micross Components reserves the right to change products or specifications without notice.
1
COTS PEM
SSRAM
AS5SP256K36
PIN DESCRIPTION / ASSIGNMENT TABLE
Signal Name
Clock
Symbol
CLK
Type
Input
Address
A0, A1
Input
Address
A
Input(s)
Chip Enable
Chip Enable
Global Write Enable
Byte Enables
Input
Input
Input
Input
Byte Write Enable
Output Enable
Address Strobe Controller
CE1\, CE3\
CE2
GW\
BWa\, BWb\,
BWc\, BWd\
BWE\
OE\
ADSC\
Input
Input
Input
87
86
85
Address Strobe from Processor
ADSP\
Input
84
Address Advance
ADV\
Input
83
Power-Down
ZZ
Input
64
Data Parity Input/Outputs
DQPa, DQPb
DQPc, DQPd
Input/
Output
Data Input/Outputs
DQa, DQb, DQc Input/
DQd
Output
Burst Mode
Power Supply [Core]
Ground [Core]
Power Supply I/O
MODE
VDD
VSS
VDDQ
Input
Supply
Supply
Supply
I/O Ground
VSSQ
Supply
No Connection(s)
NC
NA
AS5SP256K36
Rev. 2.2 10/13
Pin
Description
This input captures all synchronous inputs to the device as well as
synchronizes the burst control functions.
37, 36
Low order, Synchronous Address Inputs and Burst counter
address inputs
35, 34, 33, 32, 31, 100, Synchronous Address Inputs
99, 82, 81, 44, 45, 46,
47, 48, 49, 50, 43
98, 92
Active Low True Chip Enables
97
Active High True Chip Enable
88
Active Low True Global Write enable. Write to all bits
93, 94, 95, 96
Active Low True Byte Write enables. Write to byte segments
89
51, 80, 1, 30
Active Low True Byte Write Function enable
Active Low True Asynchronous Output enable
Address Strobe from Controller. When asserted LOW, Address is
captured in the address registers and A0-A1 are loaded into the Bur
When ADSP\ and ADSC are both asserted, only ADSP is recognized
Address Strobe from Processor. When asserted LOW,
Address is captured in the Address registers, A0-A1 is registered in
the burst counter. When both ADSP\ and ADSC\ or both asserted,
only ADSP\ is recognized. ADSP\ is ignored when CE1\ is HIGH
Advance input Address. When asserted LOW, address in burst
counter is incremented.
Asynchronous, non-time critical Power-down Input control. Places
the chip into an ultra low power mode, with data preserved.
Bidirectional I/O Parity lines. As inputs they reach the memory
array via data register, that is triggered on the
rising edge of clock. As an output, the line delivers the valid data
stored in the array via an output register and output driver. The data
delievered is from the previous clock period of the READ cycle.
Bidirectional I/O Parity lines. As inputs they reach the memo
array via data register, that is triggered on the
rising edge of clock. As an output, the line delivers the valid data
stored in the array via an output register and output driver. The data
delievered is from the previous clock period of the READ cycle.
Interleaved or Linear Burst mode control
Core Power Supply
Core Power Supply Ground
Isolated Input/Output Buffer Supply
52, 53, 56, 57, 58, 59,
62, 63, 68, 69, 72, 73,
74, 75, 78, 79, 2, 3, 6,
7, 8, 9, 12, 13, 18, 19,
22, 23, 24, 25, 28, 29
31
91, 15, 41, 65
90, 17, 40, 67
4, 11, 20, 27, 54, 61,
70, 77
5, 10, 21, 26, 55, 60, Isolated Input/Output Buffer Ground
71, 76
14, 16, 38, 39, 65
No connections to internal silicon
Micross Components reserves the right to change products or specifications without notice.
2
COTS PEM
SSRAM
AS5SP256K36
LOGIC BLOCK DIAGRAM
A 0, A1, A
ADDRESS
REGISTER
2
A [1:0]
MODE
ADV
CLK
Q1
BURST
COUNTER
CLR AND
LOGIC
ADSC
Q0
ADSP
BW D
DQ D ,DQP D
BYTE
WRITE REGISTER
DQ D ,DQPD
BYTE
WRITE DRIVER
BW C
DQ C ,DQP C
BYTE
WRITE REGISTER
DQ C ,DQP C
BYTE
WRITE DRIVER
DQ B ,DQP B
BYTE
WRITE REGISTER
DQ B ,DQP B
BYTE
WRITE DRIVER
BW B
BW A
BWE
ZZ
AS5SP256K36
Rev. 2.2 10/13
ENABLE
REGISTER
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
E
DQs
DQP A
DQP B
DQP C
DQP D
DQ A ,DQP A
BYTE
WRITE DRIVER
DQ A ,DQP A
BYTE
WRITE REGISTER
GW
CE 1
CE 2
CE 3
OE
MEMORY
ARRAY
INPUT
REGISTERS
PIPELINED
ENABLE
SLEEP
CONTROL
Micross Components reserves the right to change products or specifications without notice.
3
COTS PEM
SSRAM
AS5SP256K36
FUNCTIONAL DESCRIPTION
cycle. Consecutive single cycle READS are supported. Once
Micross Components AS5SP256K36 Synchronous SRAM is the READ operation has been completed and deselected by use
manufactured to support today’s High Performance platforms of the Chip Enable(s) and either ADSP\ or ADSC\, its outputs
utilizing the Industries leading Processor elements including will tri-state immediately.
those of Intel and Motorola. The AS5SP256K36 supports
Synchronous SRAM READ and WRITE operations as well as A Single ADSP\ controlled WRITE operation is initiated when
Synchronous Burst READ/WRITE operations. All inputs with both of the following conditions are satisfied at the time of
the exception of OE\, MODE and ZZ are synchronous in nature Clock (CLK) HIGH: [1] ADSP\ is asserted LOW, and [2] Chip
and sampled and registered on the rising edge of the devices Enable(s) are asserted ACTIVE. The address presented to
input clock (CLK). The type, start and the duration of Burst the address bus is registered and loaded on CLK HIGH, then
Mode operations is controlled by MODE, ADSC\, ADSP\ and presented to the core array. The WRITE controls Global Write,
ADV\ as well as the Chip Enable pins CE1\, CE2, and CE3\. and Byte Write Enable (GW\, BWE\) as well as the individual
All synchronous accesses including the Burst accesses are Byte Writes (BWa\, BWb\, BWc\, and BWd\) and ADV\ are
enabled via the use of the multiple enable pins and wait state ignored on the first machine cycle. ADSP\ triggered WRITE
insertion is supported and controlled via the use of the Advance accesses require two (2) machine cycles to complete. If Global
Write is asserted LOW on the second Clock (CLK) rise, the
control (ADV\).
data presented to the array via the Data bus will be written into
The AS5SP256K36 supports both Interleaved as well as Linear the array at the corresponding address location specified by the
Burst modes therefore making it an architectural fit for either Address bus. If GW\ is HIGH (inactive) then BWE\ and one or
the Intel or Motorola CISC processor elements available on the more of the Byte Write controls (BWa\, BWb\, BWc\ and BWd\)
controls the write operation. All WRITES that are initiated in
Market today.
this device are internally self timed.
The AS5SP256K36 supports Byte WRITE operations and enters
this functional mode with the Byte Write Enable (BWE\) and the
Byte Write Select pin(s) (BWa\, BWb\, BWc\, BWd\). Global
Writes are supported via the Global Write Enable (GW\) and
Global Write Enable will override the Byte Write inputs and
will perform a Write to all Data I/Os.
The AS5SP256K36 provides ease of producing very dense
arrays via the multiple Chip Enable input pins and Tri-state
outputs.
Single Cycle Access Operations
A Single READ operation is initiated when all of the following
conditions are satisfied at the time of Clock (CLK) HIGH: [1]
ADSP\ or ADSC\ is asserted LOW, [2] Chip Enables are all
asserted active, and [3] the WRITE signals (GW\, BWE\) are
in their FALSE state (HIGH). ADSP\ is ignored if CE1\ is
HIGH. The address presented to the Address inputs is stored
within the Address Registers and Address Counter/Advancement
Logic and then passed or presented to the array core. The
corresponding data of the addressed location is propagated to
the Output Registers and passed to the data bus on the next
rising clock via the Output Buffers. The time at which the data
is presented to the Data bus is as specified by either the Clock
to Data valid specification or the Output Enable to Data Valid
spec for the device speed grade chosen. The only exception
occurs when the device is recovering from a deselected to
select state where its outputs are tristated in the first machine
cycle and controlled by its Output Enable (OE\) on following
AS5SP256K36
Rev. 2.2 10/13
A Single ADSC\ controlled WRITE operation is initiated when
the following conditions are satisfied: [1] ADSC\ is asserted
LOW, [2] ADSP\ is de-asserted (HIGH), [3] Chip Enable(s) are
asserted (TRUE or Active), and [4] the appropriate combination
of the WRITE inputs (GW\, BWE\, BWx\) are asserted
(ACTIVE). Thus completing the WRITE to the desired Byte(s)
or the complete data-path. ADSC\ triggered WRITE accesses
require a single clock (CLK) machine cycle to complete. The
address presented to the input Address bus pins at time of clock
HIGH will be the location that the WRITE occurs. The ADV\
pin is ignored during this cycle, and the data WRITTEN to the
array will either be a BYTE WRITE or a GLOBAL WRITE
depending on the use of the WRITE control functions GW\ and
BWE\ as well as the individual BYTE CONTOLS (BWx\).
Deep Power-Down Mode (SLEEP)
The AS5SP256K36 has a Deep Power-Down mode and is
controlled by the ZZ pin. The ZZ pin is an Asynchronous
input and asserting this pin places the SSRAM in a deep powerdown mode (SLEEP). While in this mode, Data integrity is
guaranteed. For the device to be placed successfully into this
operational mode the device must be deselected and the Chip
Enables, ADSP\ and ADSC\ remain inactive for the duration
of tZZREC after the ZZ input returns LOW. Use of this deep
power-down mode conserves power and is very useful in
multiple memory page designs where the mode recovery time
can be hidden.
Micross Components reserves the right to change products or specifications without notice.
4
COTS PEM
SSRAM
AS5SP256K36
SYNCHRONOUS TRUTH TABLES
CE1\
H
L
L
L
L
L
L
L
X
H
X
H
X
H
X
H
CE2
X
L
X
L
X
H
H
H
X
X
X
X
X
X
X
X
CE3\
X
X
H
X
H
L
L
L
X
X
X
X
X
X
X
X
ADSP\
X
L
L
H
H
L
H
H
H
X
H
X
H
X
H
X
ADSC\
L
X
X
L
L
X
L
L
H
H
H
H
H
H
H
H
ADV\
X
X
X
X
X
X
X
X
L
L
L
L
H
H
H
H
WT / RD
X
X
X
X
X
X
WT
RD
RD
RD
WT
WT
RD
RD
WT
WT
CLK
Address Accessed
NA
NA
NA
NA
NA
External Address
External Address
External Address
Next Address
Next Address
Next Address
Next Address
Current Address
Current Address
Current Address
Current Address
Operation
Not Selected
Not Selected
Not Selected
Not Selected
Not Selected
Begin Burst, READ
Begin Burst, WRITE
Begin Burst, READ
Continue Burst, READ
Continue Burst, READ
Continue Burst, WRITE
Continue Burst, WRITE
Suspend Burst, READ
Suspend Burst, READ
Suspend Burst, WRITE
Suspend Burst, WRITE
Notes:
1. X = Don’t Care
2. WT= WRITE operation in WRITE TABLE, RD= READ operation in WRITE TABLE
BURST SEQUENCE TABLES
Burst Control
Pin [MODE]
First Address
State
HIGH
Case 1
A1
0
0
1
1
Fourth Address
Burst Control
Pin [MODE]
First Address
A0
State
LOW
Case 1
A0
A1
0
0
1
1
Fourth Address
CAPACITANCE
Interleaved Burst
Case 2
A1
A0
0
0
1
0
0
1
1
1
0
1
0
1
Linear Burst
Case 2
A1
A0
0
1
1
0
Case 3
A1
1
0
1
0
Case 4
A0
1
1
0
0
A1
0
1
0
1
1
1
0
0
Case 3
A1
1
0
1
0
A
Case 4
A0
1
1
0
0
A1
0
1
0
1
1
0
0
1
BW\
H
L
L
L
L
L
X
BWa\
X
H
L
H
H
L
X
BWb\
X
H
H
L
H
L
X
BWc\
X
H
H
H
L
L
X
BWd\
X
H
H
H
L
L
X
Operation
READ
READ
WRITE Byte [A]
WRITE Byte [B]
WRITE Byte [C], [D]
WRITE ALL Bytes
WRITE ALL Bytes
ZZ
H
L
L
L
L
Power-Down (SLEEP)
READ
OE\
X
L
H
X
X
I/O Status
High-Z
DQ
High-Z
Din, High-Z
High-Z
Rt = 50 ohm
Zo=50 ohm
Vt= Termination Voltage
Rt= Termination Resistor
Units
4.6
Units
pF
pF
pF
Output
Diagram [A]
Max.
Max.
6
8
6
AC TEST LOADS
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings
Parameter
Symbol
Min.
-0.3
Voltage on VDD Pin
VDD
Voltage on VDDQ Pins
VDDQ
VDD
Voltage on Input Pins
VIN
-0.3
Voltage on I/O Pins
VIO
-0.3
Power Dissipation
PD
Storage Temperature
tSTG
-65
Operating Temperatures
/IT
-40
[Screening Levels]
/ET
-40
/XT
-55
Symbol
CI
CIO
CCLK
ASYNCHRONOUS TRUTH TABLE
A Operation
WRITE
De-Selected
WRITE TABLE
GW\
H
H
H
H
H
H
L
Parameter
Input Capacitance
Input/Output Capacitance
Clock Input Capacitance
30 pF
Vt= 1.50v for 3.3v VDDQ
Vt= 1.25v for 2.5v VDDQ
V
R= 317 [email protected]
R= 1667 [email protected]
V
VDD+0.3
V
VDDQ+0.3
V
1.6
W
R
C
150
85
R
105
R
125
R
Output
3.3/2.5v
5 pF
R= 351 [email protected]
R= 1538 [email protected]
C
C
Diagram [B]
C
*Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions greater than those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum conditions
for any duration or segment of time may affect device reliability.
AS5SP256K36
Rev. 2.2 10/13
Micross Components reserves the right to change products or specifications without notice.
5
COTS PEM
SSRAM
AS5SP256K36
DC Electrical Characteristics (VDD=3.3v -5%/+10%),
TA= Min. and Max temperatures of Screening level chosen)
Symbol
VDD
VDDQ
VoH
Parameter
Power Supply Voltage
I/O Supply Voltage
Output High Voltage
Test Conditions
3.3v
2.5v
3.3v
2.5v
3.3v
2.5v
3.3v
2.5v
VDD=Min., IOH=-4mA
VDD=Min., IOH=-1mA
Output Low Voltage
VoL
VDD=Min., IOL=8mA
VDD=Min., IOL=1mA
VIH
Input High Voltage
VIL
Input Low Voltage
IIL
IZZL
IOL
IDD
Input Leakage (except ZZ)&Mode VDD=Max., VIN=VSS to VDD
Input Leakage, ZZ pin & mode
Output Disabled, VOUT=VSSQ to VDDQ
Output Leakage
VDD=Max., f=Max.,
5.0ns Cycle, 200 Mhz
Operating Current
IOH=0mA
6.0ns Cycle, 166 Mhz
7.5ns Cycle, 133 Mhz
Max. VDD, Device De-Selected,
Automatic CE. Power-down
Current -TTL inputs
VIN>/=VIH or VIN</=VIL
5.0ns Cycle, 200 Mhz
f=fMAX=1/tCYC
6.0ns Cycle, 166 Mhz
7.5ns Cycle, 133 Mhz
Max. VDD, Device De-Selected, VIN</=0.3v or VIN>/=VDDQ-0.3v
Automatic CE. Power-down
f=0
Current - CMOS Inputs
ISB1
ISB2
Min
3.135
2.375
2.4
2
2
1.7
-0.3
-0.3
-5
-30
-5
Max
3.630
VDD
0.4
0.4
VDD+0.3
VDD+0.3
0.8
0.7
5
30
5
275
250
225
Units
V
V
V
V
V
V
V
V
V
V
uA
uA
uA
mA
mA
mA
150
140
130
110
mA
mA
mA
mA
Notes
1
1,5
1,4
1,4
1,4
1,4
1,2
1,2
1,2
1,2
3
3
THERMAL RESISTANCE
Parameter
ȺJA
ȺJC
Description
ThermalResistance
(JunctiontoAmbient)
ThermalResistance
(JunctiontoCase)
TestConditions
Testconditionsfollowstandardtest
methodsandproceduresfor
measuringthermalimpedance,per
EIA/JESD51
DQ
DQC
Package Package Unit
29.41
30.2
o
6.13
6.5
o
C/W
C/W
Notes:
[1]
[2]
[3]
[4]
[5]
[6]
AS5SP256K36
Rev. 2.2 10/13
All Voltages referenced to VSS (Logic Ground)
Overshoot: VIH < +4.6V for t<tCYC/2 for I<20mA
Undershoot: VIL >-0.7V for t<tCYC/2 for I<20mA
Power-up: VIH <+3.6V and VDD<3.135V for t<200ms
MODE and ZZ pins have internal pull-up resistors, and input leakage +/> +100uA
The load used for VOH, VOL testing is shown in Figure-2 for 3.3v and 2.5V supplies.
AC load current is higher than stated values, AC I/O curves can be made available upon request
VDDQ should never exceed VDD, VDD and VDDQ can be connected together
This parameter is sampled
Micross Components reserves the right to change products or specifications without notice.
6
COTS PEM
SSRAM
AS5SP256K36
AC Switching Characteristics (VDD=VDDQ=3.3v -5%/+10%,)
TA= Min. and Max temperatures of Screening level chosen)
Parameter
Clock (CLK) Cycle Time
Clock (CLK) High Time
Clock (CLK) Low Time
Clock Access Time
Clock (CLK) High to Output Low-Z
Clock High to Output High-Z
Output Enable to Data Valid
Output Hold from Clock High
Output Enable Low to Output Low-Z
Output Enable High to Output High-Z
Address Set-up to CLK High
Address Hold from CLK High
Address Status Set-up to CLK High
Address Status Hold from CLK High
Address Advance Set-up to CLK High
Address Advance Hold from CLK High
Chip Enable Set-up to CLK High (CEx\, CE2)
Chip Enable Hold from CLK High (CEx\, CE2)
Data Set-up to CLK High
Data Hold from CLK High
Write Set-up to CLK High (GW\, BWE\, BWx\)
Write Hold from CLK High (GW\, BWE\, BWX\)
ZZ High to Power Down
ZZ Low to Power Up
1.
2.
3.
4.
5.
6.
7.
8.
9.
AS5SP256K36
Rev. 2.2 10/13
Symbol
tCYC
tCH
tCL
tCD
tCLZ
tCHZ
tOE
tOH
tOELZ
tOEHZ
tAS
tAH
tASS
tASH
tADVS
tADVH
tCES
tCEH
tDS
tDH
tWES
tWEH
tPD
tPU
-30 [200Mhz]
Min.
Max.
5.00
2.00
2.00
3.00
1.25
1.25
3.00
3.00
1.25
0.00
3.00
1.40
0.40
1.40
0.40
1.40
0.40
1.40
0.40
1.40
0.40
1.40
0.40
2
2
-35 [166Mhz]
Min.
Max.
6.00
2.20
2.20
3.50
1.25
1.25
3.50
3.50
1.25
0.00
3.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
2
2
-40 [133Mhz]
Min.
Max.
7.50
2.50
2.50
4.00
1.25
1.25
3.50
4.00
1.25
0.00
3.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
2
2
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
cycles
cycles
Notes
1
1
2
2,3,4,5
2,3,4,5
6
2,3,4,5
2,3,4,5
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
Measured as HIGH when above VIH and Low when below VIL
This parameter is measured with the output loading shown in AC Test Loads
This parameter is sampled
Transition is measured +500mV from steady state voltage
Critical specification(s) when Design Considerations are being reviewed/analyized for Bus Contentention
OE\ is a Don't Care when a Byte or Global Write is sampled LOW
A READ cycle is defined by Byte or Global Writes sampled LOW and ADSP\ is sampled HIGH for the required SET-UP and HOLD times
This is a Synchronous device. All addresses must meet the specified SET-UP and HOLD times for all rising edges of CLK when either
ADSP\ or ADSC\ is sampled LOW while the device is enabled. All other synchronous inputs must meet the SET-UP and HOLD times
with stable logic levels for all rising edges of clock (CLK) during device operation (enabled). Chip Enable (Cex\, CE2) must be valid
at each rising edge of clock (CLK) when either ADSP\ or ADSC\ is LOW to remain enabled.
This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD (minimum) initially before a
Read or Write operation can be initiated.
Micross Components reserves the right to change products or specifications without notice.
7
COTS PEM
SSRAM
AS5SP256K36
AC Switching Waveforms
Write Cycle Timing
Single Write
Burst Write
tCYC
Pipelined Write
tCH
CLK
tASS
tASH
tCL
ADSP\
ADSP\ Ignored with CE1\ inactive
ADSC\
tASS
tASH
ADV\
tADVS
Ax
tADVH
A1
ADV\ Must be Inactive for ADSP\ Write
A3
A2
tAS
tAH
GW\
tWES
tWEH
tWEH
tWES
BWE\, BWx\
tCES
tCEH
CE1\ Masks ADSP\
CE1\
CE2
CE3\
OE\
tDS
DQx,DQPx
tDH
W1
W2a
W2b
W2c
W2d
W3
DON'T CARE
UNDEFINED
AS5SP256K36
Rev. 2.2 10/13
Micross Components reserves the right to change products or specifications without notice.
8
COTS PEM
SSRAM
AS5SP256K36
AC Switching Waveforms
Read Cycle Timing
Single Read
Burst Read
tCYC
tCH
Pipelined Read
tCL
CLK
tASS
tASH
ADSP\ Ignored with CE1\ Inactive
ADSP\
ADSC\ Initiated Read
ADSC\
Suspend Burst
ADV\
tADVS
Ax
tADVH
A2
A1
tAS
A3
tAH
GW\
tWES
tWEH
BWE\, BWx\
tCES
CE1\ Masks ADSP\
tCEH
CE1\
Unselected with CE2
CE2
CE3\
OE\
tOEHZ
tOE
tCD
DQx,DQPx
R1
tOH
R2a
R2b
R2c
R2d
R3a
DON'T CARE
UNDEFINED
AS5SP256K36
Rev. 2.2 10/13
Micross Components reserves the right to change products or specifications without notice.
9
COTS PEM
SSRAM
AS5SP256K36
AC Switching Waveforms
Read / Write Cycle Timing
tCYC
Pipelined Read
Burst Read
tCH
tCL
CLK
tASS
tASH
ADSP\
ADSC\
ADV\
tADVS
tADVH
tAS
Ax
A1R
A2W
A3W
A4R
A5R
tAH
GW\
tWES
tWEH
BWE\, BWx\
tCES
tCEH
tCES
tCEH
CE1\
CE2
CE3\
OE\
tOE
DQx,DQPx
DON'T CARE
A1O
tOEHZ
tOH
A2I
A4O
[a]
A3I
A4O
[b]
A4O
[c]
A4O
[d]
tOELZ
tCD
UNDEFINED
AS5SP256K36
Rev. 2.2 10/13
Micross Components reserves the right to change products or specifications without notice.
10
COTS PEM
SSRAM
AS5SP256K36
Power Down (SNOOZE MODE)
Power Down or Snooze is a Power conservation mode which when building large/very dense arrays, using multiple devices
in a multi-banked or paged array, can greatly reduce the Operating current requirements of your total memory array solution.
The device is placed in this mode via the use of the ZZ pin, an asynchronous control pin which when asserted, places the
array into the lower power or Power Down mode. Awakening the array or leaving the Power Down (SNOOZE) mode is done
so by de-asserting the ZZ pin .
While in the Power Down or Snooze mode, Data integrity is guaranteed. Accesses pending when the device entered the
mode are not considered valid nor is the completion of the operation guaranteed. The device must be de-selected prior to
entering the Power Down mode, all Chip Enables, ADSP\ and ADSC\ must remain inactive for the duration of ZZ recovery
time (tZZREC).
ZZ MODE ELECTRICAL CHARACTERISTICS
Parameter
Power Down (SNOOZE) Mode
ZZ Active (Signal HIGH) to Power Down
ZZ Inactive (Signal Low) to Power Up
Symbol
Test Conditon
IDDzz
ZZ >/- VDD - 0.2V
tZZS
ZZ >/- VDD - 0.2V
tZZR
ZZ </- 0.2V
Min.
2 tCYC
Max.
75
2 tCYC
Units
mA
ns
ns
ZZ MODE TIMING DIAGRAM
CLK
ADSP\
ADSC\
CEx\
CE2
ZZ
tZZS
IDD
AS5SP256K36
Rev. 2.2 10/13
tZZREC
IDDzz
Micross Components reserves the right to change products or specifications without notice.
11
COTS PEM
SSRAM
AS5SP256K36
MECHANICAL DEFINITION
100-Pin TQFP (Package Designator DQ)
AS5SP256K36
Rev. 2.2 10/13
Micross Components reserves the right to change products or specifications without notice.
12
COTS PEM
SSRAM
AS5SP256K36
ORDERING INFORMATION
TQFP
Device Number
AS5SP256K36DQ-30/IT
AS5SP256K36DQ-35/IT
AS5SP256K36DQ-40/IT
AS5SP256K36DQ-30/ET
AS5SP256K36DQ-35/ET
AS5SP256K36DQ-40/ET
AS5SP256K36DQ-35/XT
AS5SP256K36DQ-40/XT
Configuration
256Kx36, 3.3vCore/3.3,2.5vIO
256Kx36, 3.3vCore/3.3,2.5vIO
256Kx36, 3.3vCore/3.3,2.5vIO
256Kx36, 3.3vCore/3.3,2.5vIO
256Kx36, 3.3vCore/3.3,2.5vIO
256Kx36, 3.3vCore/3.3,2.5vIO
256Kx36, 3.3vCore/3.3,2.5vIO
256Kx36, 3.3vCore/3.3,2.5vIO
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
ET = Enhanced Temperature Range
XT = Military Temperature Range
AS5SP256K36
Rev. 2.2 10/13
tCD
(ns)
3.0
3.5
4.0
3.0
3.5
4.0
3.5
4.0
Clock
(Mhz)
200*
166
133
200
166
133
166
133
-40oC to +85oC
-40oC to +105oC
-55oC to +125oC
Micross Components reserves the right to change products or specifications without notice.
13
COTS PEM
SSRAM
AS5SP256K36
DOCUMENT TITLE
256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
REVISION HISTORY
Rev #
1.6
History
Updated Assignment Table to indicate
ADV\ Low
Release Date
June 2009
Status
Release
1.7
Changed all references to ADV\
June 2009
Release
1.8
Updated DC Chart
July 2009
Release
1.9
Added Micross Information
January 2010
Release
2.0
Added copper lead frame and RoHS
May 2011
compliant options, Updated IDDzz
from 60mA to 75mA, Updated logic block
diagram on page 2. Deleted ISB3 & ISB4
specs. Changed:
IDDMax (-30)
(-35)
(-40)
ISB1Max (-30)
(-35)
(-40)
ISB2Max
CI &CCLK
CIO
ΘJA
ΘJC
From
220mA
180mA
140mA
120mA
110mA
100mA
40mA
5pf
5pf
35oc/w
9oc/w
Release
To
275mA
250mA
225mA
150mA
140mA
130mA
110mA
6pf
8pf
29.41oc/w
6.13oc/w
2.1
Added Thermal Resistance for DQC
package, page 6.
September 2011
Release
2.2
Removed Cu-lead frame option
October 2013
Release
AS5SP256K36
Rev. 2.2 10/13
Micross Components reserves the right to change products or specifications without notice.
14
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