MMSZ4678T1 Series Preferred Device Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Features • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 1.8 V to 43 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Pb−Free Packages are Available 1 Cathode 2 Anode SOD−123 CASE 425 STYLE 1 2 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 260°C for 10 Seconds MARKING DIAGRAM POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 1 MAXIMUM RATINGS Rating Total Power Dissipation on FR−5 Board, (Note 1) @ TL = 75°C Derated above 75°C Symbol Max Unit 500 6.7 mW mW/°C °C/W PD Thermal Resistance, (Note 2) Junction−to−Ambient RqJA 340 Thermal Resistance, (Note 2) Junction−to−Lead RqJL 150 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2. Thermal Resistance measurement obtained via infrared Scan Method. xx M G G xx = Device Code (Refer to page 3) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping † MMSZ4xxxT1 SOD−123 3000/Tape & Reel MMSZ4xxxT1G SOD−123 (Pb−Free) 3000/Tape & Reel MMSZ4xxxT3 SOD−123 10000/Tape & Reel MMSZ4xxxT3G SOD−123 (Pb−Free) 10000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 7 1 Publication Order Number: MMSZ4678T1/D MMSZ4678T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR IR VF IZT Zener Voltage Regulator http://onsemi.com 2 V MMSZ4678T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 3) VZ (Volts) Leakage Current @ IZT IR @ VR Device Marking Min Nom Max mA mA Volts MMSZ4678T1, G CC 1.71 1.8 1.89 50 7.5 1 MMSZ4679T1, G CD 1.90 2.0 2.10 50 5 1 MMSZ4680T1, G CE 2.09 2.2 2.31 50 4 1 Device* MMSZ4681T1, G CF 2.28 2.4 2.52 50 2 1 MMSZ4682T1, G CH 2.565 2.7 2.835 50 1 1 MMSZ4683T1, G CJ 2.85 3.0 3.15 50 0.8 1 MMSZ4684T1, G CK 3.13 3.3 3.47 50 7.5 1.5 MMSZ4685T1, G CM 3.42 3.6 3.78 50 7.5 2 MMSZ4686T1, G CN 3.70 3.9 4.10 50 5 2 MMSZ4687T1, G CP 4.09 4.3 4.52 50 4 2 MMSZ4688T1, G CT 4.47 4.7 4.94 50 10 3 MMSZ4689T1, G CU 4.85 5.1 5.36 50 10 3 MMSZ4690T1, G CV 5.32 5.6 5.88 50 10 4 MMSZ4691T1, G CA 5.89 6.2 6.51 50 10 5 MMSZ4692T1, G CX 6.46 6.8 7.14 50 10 5.1 MMSZ4693T1, G CY 7.13 7.5 7.88 50 10 5.7 MMSZ4694T1, G CZ 7.79 8.2 8.61 50 1 6.2 MMSZ4695T1, G DC 8.27 8.7 9.14 50 1 6.6 MMSZ4696T1, G DD 8.65 9.1 9.56 50 1 6.9 MMSZ4697T1, G DE 9.50 10 10.50 50 1 7.6 MMSZ4698T1, G DF 10.45 11 11.55 50 0.05 8.4 MMSZ4699T1, G DH 11.40 12 12.60 50 0.05 9.1 MMSZ4700T1, G DJ 12.35 13 13.65 50 0.05 9.8 MMSZ4701T1, G DK 13.30 14 14.70 50 0.05 10.6 DM 14.25 15 15.75 50 0.05 11.4 DN 15.20 16 16.80 50 0.05 12.1 DP 16.15 17 17.85 50 0.05 12.9 MMSZ4705T1, G DT 17.10 18 18.90 50 0.05 13.6 MMSZ4706T1, G DU 18.05 19 19.95 50 0.05 14.4 MMSZ4707T1, G DV 19.00 20 21.00 50 0.01 15.2 MMSZ4708T1, G DA 20.90 22 23.10 50 0.01 16.7 MMSZ4709T1, G DX 22.80 24 25.20 50 0.01 18.2 MMSZ4710T1, G DY 23.75 25 26.25 50 0.01 19.0 MMSZ4702T1, G MMSZ4703T1, G † MMSZ4704T1, G MMSZ4711T1, G † EA 25.65 27 28.35 50 0.01 20.4 MMSZ4712T1 EC 26.60 28 29.40 50 0.01 21.2 MMSZ4713T1, G ED 28.50 30 31.50 50 0.01 22.8 MMSZ4714T1, G EE 31.35 33 34.65 50 0.01 25.0 MMSZ4715T1, G EF 34.20 36 37.80 50 0.01 27.3 MMSZ4716T1, G EH 37.05 39 40.95 50 0.01 29.6 MMSZ4717T1, G EJ 40.85 43 45.15 50 0.01 32.6 3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. *The “G’’ suffix indicates Pb−Free package available. †MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel http://onsemi.com 3 MMSZ4678T1 Series 8 θ VZ , TEMPERATURE COEFFICIENT (mV/°C) θ VZ , TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS 7 6 TYPICAL TC VALUES 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 100 TYPICAL TC VALUES VZ @ IZT 10 1 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 Ppk , PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) 1.2 1.0 PD versus TL 0.8 0.6 PD versus TA 0.4 0.2 0 0 25 50 75 100 T, TEMPERATURE (5C) 125 RECTANGULAR WAVEFORM, TA = 25°C 100 10 1 0.1 150 Figure 3. Steady State Power Derating 10 PW, PULSE WIDTH (ms) 100 1000 Figure 4. Maximum Nonrepetitive Surge Power 1000 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 1 100 5 mA 20 mA 10 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMSZ4678T1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (μA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 1 10 1 +150°C 0.1 0.01 10 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.001 +25 °C 0.0001 −55 °C 0.00001 0 10 Figure 7. Typical Capacitance 100 TA = 25°C 10 1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 Figure 8. Typical Leakage Current I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 100 20 10 10 1 0.1 0.01 12 TA = 25°C 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 5 90 MMSZ4678T1 Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A A1 1 HE DIM A A1 b c D E HE L E MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− STYLE 1: PIN 1. CATHODE 2. ANODE L 2 MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 C b SOLDERING FOOTPRINT* ÉÉÉ ÉÉÉ ÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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