MBRF20H100CT - MBRF20H200CT CREAT BY ART Pb 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB RoHS COMPLIANCE Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds/.25", (6.35mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Case: ITO-220AB molded plastic body Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 MBRF20HXXCT G = Green Compound Polarity: As marked Y = Year Mounting position:Any WW = Work Week Mounting torque: 5 in. - lbs, max Weight: 1.75 grams Marking Diagram = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF 20H100CT MBRF 20H150CT MBRF 20H200CT Unit Maximum Repetitive Peak Reverse Voltage VRRM 100 150 200 V Maximum RMS Voltage VRMS 70 105 140 V Maximum DC Blocking Voltage VDC 100 150 200 V Maximum Average Forward Rectified Current at TC=133℃ IF(AV) 20 A Peak Repetitive Surge Current (Rated V R, Square Wave, 20KHz) at Tc=133℃ IFRM 20 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC Method) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 1) IRRM Type Number Maximum Instantaneous Forward Voltage (Note 2) IF=10A, TA=25℃ IF=10A, TA=125℃ IF=20A, TA=25℃ IF=20A, TA=125℃ Maximum Reverse Current @ Rated V R TA=25 ℃ TA=125 ℃ Voltage Rate of Change,(Rated VR) VF 1 0.5 0.85 0.88 0.75 0.75 0.95 0.97 0.85 A V 0.85 IR dV/dt 5 uA 2 mA 10000 V/us 4500 (Note 3) RMS Isolation Voltage (t=1.0 second, R.H.≦30%,TA=25℃) VISO Typical Thermal Resistance RθjC 3.5 TJ - 65 to + 175 O TSTG - 65 to + 175 O Operating Temperature Range Storage Temperature Range V 3500 (Note 4) 1500 (Note 5) O C/W C C Note 1: 2.0uS Pulse Width, f=1.0KHz Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Note 3: Clip Mounting (on case), where lead does not overlap heatsink with 0.11" offset Note 4: Clip Mounting (on case), where lead do overlap heatsink. Note 5: Screw mounting with 4-40 screw, where washer diameter is ≦4.9mm (0.19") Version:E11 RATINGS AND CHARACTERISTIC CURVES (MBRF20H100CT THRU MBRF20H200CT) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT (A) 25 180 PEAK FORWARD SURGE A CURRENT (A) 20 15 10 5 RESISTIVE OR INDUCTIVELOA 8.3mS Single Half Sine Wave JEDEC Method 150 120 90 60 30 0 50 60 70 80 90 100 110 120 130 140 150 160 170 180 CASE TEMPERATURE (oC) 0 1 10 NUMBER OF CYCLES AT 60 Hz FIG. 3 TYPICAL FORWARD CHARACTERISRICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 10 TA=125℃ 1 TA=25℃ 0.1 PULSE WIDTH=300uS 1% DUTY CYCLE TA=125℃ 1 0.1 TA=75℃ 0.01 0.001 TA=25℃ 0.0001 0 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.1 1.2 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 TYPICAL JUNCTION CAPACITANCE 1000 100 900 TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 100 TA=25℃ f=1.0MHz Vsig=50mVp-p 800 700 600 500 400 300 200 100 0.1 1 10 REVERSE VOLTAGE (V) 100 10 1 0.1 0.01 0.1 1 10 100 T-PULSE DURATION(s) Version:E11