Fairchild FJX3904 Npn epitaxial silicon transistor Datasheet

FJX3904
NPN Epitaxial Silicon Transistor
• General Purpose Transistor
3
2
1
SOT-323
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCES
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
TSTG
Storage Temperature
6
V
200
mA
350
mW
-55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics*
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=10µA, IE=0
60
V
BVCEO
* Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
40
V
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
6
V
ICEX
Collector Cut-off Current
VCE=30V, VEB=3V
hFE
* DC Current Gain
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE(sat)
* Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VBE(sat)
* Base-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Cob
50
40
70
100
60
30
0.65
nA
300
0.2
0.3
V
V
0.85
0.95
V
V
Output Capacitance
VCB=5V, IE=0, f=1MHz
fT
Current Gain Bandwidth Product
VCE=20V, IC=10mA
4
NF
Noise Figure
IC=100µA, VCE=5V, RS=1KΩ
f=10Hz to 15.7KHz
5
dB
tON
Turn On Time
VCC=3V, VBE=0.5V
IC=10mA, IB1=1mA
70
ns
tOFF
Turn Off Time
VCC=3V, IC=10mA
IB1=IB2=1mA
250
ns
300
pF
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2007 Fairchild Semiconductor Corporation
FJX3904 Rev. B
1
www.fairchildsemi.com
FJX3904 NPN Epitaxial Silicon Transistor
January 2007
Device Item (note)
Device Marking
FJX3904TF
S1A
Package
Packing Method
Qty(pcs)
SOT-323
TAPE & REEL
3,000
Note : The Suffix “-TF” means Tape& Reel packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Performance Characteristics
240
VCE = 1V
hFE, DC CURRENT GAIN
200
160
120
80
40
0
0.1
1
10
10
IC = 10 IB
VBE(sat)
1
0.1
VCE(sat)
0.01
100
0.1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
100
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
5
Cob [pF], CAPACITANCE
10
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
6
4
3
2
1
0
1
10
100
VCE = 20V
100
10
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
2
FJX3904 Rev. B
1
IC[mA], COLLECTOR CURRENT
www.fairchildsemi.com
FJX3904 NPN Epitaxial Silicon Transistor
Package Marking and Ordering Information
FJX3904 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.95±0.15
0.90
±0.10
+0.05
0.05 –0.02
1.00±0.10
1.30±0.10
0.275±0.100
3°
+0.04
0.135 –0.01
0.10 Min
Dimensions in Millimeters
3
FJX3904 Rev. B
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Advance Information
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This datasheet contains the design specifications for
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The datasheet is printed for reference information only.
Rev. I22
4
FJX3904 Rev. B
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FJX3904 NPN Epitaxial Silicon Transistor
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