DISCRETE SEMICONDUCTORS DATA SHEET BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10 000). 2 emitter 3 collector APPLICATIONS • Where very high amplification is required. DESCRIPTION handbook, halfpage PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV26 FD* BCV46 FE* 1 2 2 MAM299 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCV26 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads BCV46 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter − −40 V − −80 V BCV26 − −30 V BCV46 − −60 V BCV26 BCV46 VCES MIN. collector-emitter voltage VBE = 0 VEBO emitter-base voltage − −10 V IC collector current (DC) − −500 mA ICM peak collector current − −800 mA IB base current (DC) − −100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 13 3 VALUE UNIT 500 K/W NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector cut-off current BCV26 IE = 0; VCB = −30 V − − −100 nA BCV46 IE = 0; VCB = −60 V − − −100 nA − − −100 nA 4 000 − − 2 000 − − 10 000 − − − − BCV26 20 000 − − BCV46 10 000 − − IEBO emitter cut-off current IC = 0; VEB = −10 V hFE DC current gain IC = −1 mA; VCE = −5 V; (see Fig.2) BCV26 BCV46 IC = −10 mA; VCE = −5 V; (see Fig.2) DC current gain BCV26 BCV46 4 000 IC = −100 mA; VCE = −5 V; (see Fig.2) DC current gain VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA − − −1 V VBEsat base-emitter saturation voltage IC = −100 mA; IB = −0.1 mA − − −1.5 V VBEon base-emitter on-state voltage IC = −10 mA; VCE = −5 V − − −1.4 V fT transition frequency IC = −30 mA; VCE = −5 V; f = 100 MHz − 220 − MHz MGD836 100000 handbook, full pagewidth hFE 80000 60000 40000 20000 0 −1 −10 −102 VCE = −2 V. Fig.2 DC current gain; typical values. 2004 Jan 13 4 IC (mA) −103 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 13 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 5 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Jan 13 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp7 Date of release: 2004 Jan 13 Document order number: 9397 750 12401