MBR2080CT, MBR2090CT, MBR20100CT SWITCHMODE™ Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 80−100 VOLTS Features • • • • • • • • • • http://onsemi.com 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Shipped 50 units per plastic tube Pb−Free Packages are Available* 1 2, 4 3 4 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220AB CASE 221A PLASTIC 1 2 3 MARKING DIAGRAM AY WW B20x0G AKA A Y WW B20x0 x G AKA = Assembly Location = Year = Work Week = Device Code = 8, 9 or 10 = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 0 1 Publication Order Number: MBR20100CT/D MBR2080CT, MBR2090CT, MBR20100CT MAXIMUM RATINGS (Per Diode Leg) MBR Symbol 2080CT 2090CT 20100CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 90 100 V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms RqJC RqJA 2.0 60 °C/W Rating THERMAL CHARACTERISTICS Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR V 0.75 0.85 0.85 0.95 mA 6.0 0.1 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Package MBR2080CT MBR2080CTG TO−220 TO−220 (Pb−Free) MBR2090CT 50 Units / Rail TO−220 MBR2090CTG TO−220 (Pb−Free) MBR20100CT TO−220 MBR20100CTG Shipping† TO−220 (Pb−Free) 50 Units / Rail 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 10 50 TJ = 150°C 20 IR , REVERSE CURRENT (mA) 150°C 10 100°C 125°C 5.0 3.0 TJ = 25°C 1.0 1.0 125°C 0.1 100°C 0.01 0.001 25°C 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 0.0001 1.0 0.9 40 60 100 80 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 20 RATED VOLTAGE APPLIED RqJC = 2°C/W dc 15 SQUARE WAVE 10 5.0 0 80 20 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 100 120 140 160 20 (HEATSINK) RqJA = 16°C/W (NO HEATSINK) RqJA = 60°C/W 15 10 dc 5.0 SQUARE WAVE 0 180 0 20 60 40 IPK/IAV = 5.0 TA = 25°C IPK/IAV = p 16 IPK/IAV = 10 14 12 dc IPK/IAV = 20 8.0 SQUARE WAVE 6.0 4.0 2.0 0 0 2.0 100 120 140 160 180 Figure 4. Typical Current Derating, Ambient, Per Leg 20 10 80 TA, AMBIENT TEMPERATURE (°C) Figure 3. Typical Current Derating, Case, Per Leg 18 RATED VOLTAGE APPLIED dc TC, CASE TEMPERATURE (°C) AVERAGE POWER (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR2080CT, MBR2090CT, MBR20100CT 4.0 6.0 8.0 10 12 14 16 18 AVERAGE CURRENT (AMPS) Figure 5. Average Power Dissipation and Average Current http://onsemi.com 3 20 MBR2080CT, MBR2090CT, MBR20100CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR20100CT/D