MMSZ5221ET1 Series Preferred Device Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Features • • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 110 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications General Purpose, Medium Current ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) Pb−Free Packages are Available 1 Cathode SOD−123 CASE 425 STYLE 1 2 1 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 1 MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 3) @ TL = 75°C Derated above 75°C PD xxx M G G xxx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION 500 6.7 mW mW/°C °C/W Thermal Resistance, (Note 2) Junction−to−Ambient RqJA 340 Thermal Resistance, (Note 2) Junction−to−Lead RqJL 150 TJ, Tstg −55 to +150 Junction and Storage Temperature Range 2 Anode Package Shipping † MMSZ52xxET1 SOD−123 3000/Tape & Reel MMSZ52xxET1G SOD−123 (Pb−Free) 3000/Tape & Reel MMSZ52xxET3 SOD−123 10000/Tape & Reel MMSZ52xxET3G SOD−123 (Pb−Free) 10000/Tape & Reel Device °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 11. 2. Thermal Resistance measurement obtained via infrared Scan Method. 3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 6 1 Publication Order Number: MMSZ5221ET1/D MMSZ5221ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR V IR VF IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Notes 4 and 5) VZ (V) Zener Impedance (Note 6) Leakage Current @ IZT ZZT @ IZT Max mA W W mA mA V 2.4 2.52 20 30 1200 0.25 100 1 2.57 2.7 2.84 20 30 1300 0.25 75 1 CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1 CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1 MMSZ5229ET1 CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1 MMSZ5231ET1 CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2 MMSZ5232ET1 CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMSZ5234ET1 CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMSZ5235ET1 CB6 6.46 6.8 7.14 20 5 750 0.25 3 5 MMSZ5236ET1 CB7 7.13 7.5 7.88 20 6 500 0.25 3 6 MMSZ5237ET1 CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMSZ5240ET1 CC2 9.50 10 10.50 20 17 600 0.25 3 8 MMSZ5242ET1 CC4 11.40 12 12.60 20 30 600 0.25 1 9.1 MMSZ5243ET1 CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMSZ5244ET1 CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10 MMSZ5245ET1 CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMSZ5246ET1 CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMSZ5248ET1 CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14 MMSZ5250ET1 CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15 MMSZ5252ET1 CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18 Device Marking Min Nom MMSZ5221ET1 CA1 2.28 MMSZ5223ET1 CA3 MMSZ5226ET1 MMSZ5228ET1 Device* ZZK @ IZK 4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C $1°C. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. *The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1. http://onsemi.com 2 IR @ VR MMSZ5221ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Notes 4 and 5) VZ (V) Zener Impedance (Note 6) @ IZT ZZT @ IZT Max mA W W mA mA V 25 26.25 5.0 35 600 0.25 0.1 19 25.65 27 28.35 4.6 41 600 0.25 0.1 21 CD8 26.60 28 29.40 4.5 44 600 0.25 0.1 21 MMSZ5256ET1 CD9 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMSZ5257ET1 CE1 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMSZ5258ET1 CE2 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMSZ5259ET1 CE3 37.05 39 40.95 3.2 80 800 0.25 0.1 30 MMSZ5262ET1 CE6 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 MMSZ5263ET1 CE7 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 Device Marking Min Nom MMSZ5253ET1 CD6 23.75 MMSZ5254ET1 CD7 MMSZ5255ET1 Device* ZZK @ IZK Leakage Current 4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C $1°C. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. *The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1. http://onsemi.com 3 IR @ VR MMSZ5221ET1 Series qVZ, TEMPERATURE COEFFICIENT (mV/°C) qVZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS 8 100 7 TYPICAL TC VALUES FOR MMSZ5221BT1 SERIES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES FOR MMSZ5221BT1 SERIES VZ @ IZT 10 1 10 Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1.2 Ppk, PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) 1000 1.0 PD versus TL 0.8 0.6 PD versus TA 0.2 0 25 RECTANGULAR WAVEFORM, TA = 25°C 100 0.4 0 50 75 100 T, TEMPERATURE (°C) 125 10 1 150 Figure 3. Steady State Power Derating 0.1 1 1000 1000 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) IZ = 1 mA 100 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 10 150°C 1 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 ZZT, DYNAMIC IMPEDANCE (W) 100 VZ, NOMINAL ZENER VOLTAGE (V) 75°C 25°C 0°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMSZ5221ET1 Series IR, LEAKAGE CURRENT (mA) TYPICAL CHARACTERISTICS 1000 TA = 25°C C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS 100 BIAS AT 50% OF VZ NOM 10 1 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 1000 100 10 1 +150°C 0.1 0.01 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 7. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 8. Typical Leakage Current 100 100 TA = 25°C IZ, ZENER CURRENT (mA) 10 1 0.1 10 1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 10 12 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT IZ, ZENER CURRENT (mA) TA = 25°C 0.01 80 40 60 t, TIME (ms) Figure 11. 8 × 20 ms Pulse Waveform http://onsemi.com 5 80 90 MMSZ5221ET1 Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A A1 1 HE DIM A A1 b c D E HE L E MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− STYLE 1: PIN 1. CATHODE 2. ANODE L 2 MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 C b SOLDERING FOOTPRINT* ÉÉÉ ÉÉÉ ÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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