Infineon BSP60 Pnp silicon darlington transistor Datasheet

BSP60 ... BSP62
PNP Silicon Darlington Transistors
High collector current
4
Low collector-emitter saturation voltage
Complementary types: BSP50 ... BSP52 (NPN)
3
2
1
Type
Marking
Pin Configuration
BSP60
BSP 60
1=B
2=C
3=E
4=C
SOT223
BSP61
BSP 61
1=B
2=C
3=E
4=C
SOT223
BSP62
BSP 62
1=B
2=C
3=E
4=C
SOT223
BSP60
BSP61
BSP62
VPS05163
Package
Maximum Ratings
Parameter
Symbol
Unit
Collector-emitter voltage
VCEO
45
60
80
Collector-base voltage
VCBO
60
80
90
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
1
Peak collector current
ICM
2
Base current
IB
100
mA
Total power dissipation, TS = 124 °C
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
A
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
17
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
BSP60 ... BSP62
Electrical Characteristics at TA = 25°C, unless othertwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSP60
45
-
-
BSP61
60
-
-
BSP62
80
-
-
BSP60
60
-
-
BSP61
80
-
-
BSP62
90
-
-
V(BR)EBO
5
-
-
ICES
-
-
10
IEBO
-
-
10
V(BR)CBO
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V
V(BR)CEO
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-emitter cutoff current
µA
VCE = VCEOmax , VBE = 0
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
-
hFE
IC = 150 mA, VCE = 10 V
1000
-
-
IC = 500 mA, VCE = 10 V
2000
-
-
Collector-emitter saturation voltage1)
V
VCEsat
IC = 500 mA, IB = 0.55 mA
-
-
1.3
IC = 1 A, IB = 1 mA
-
-
1.8
IC = 500 mA, IB = 0.5 mA
-
-
1.9
IC = 1 A, IB = 1 mA
-
-
2.2
fT
-
200
-
MHz
Turn-on time
t(on)
-
400
-
ns
IC = 500 mA, IB1 = IB2 = 0.5mA
Turn-off time
t(off)
-
1500
-
Base-emitter saturation voltage 1)
VBEsat
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
IC = 500 mA, IB1 = IB2 = 0.5mA
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-30-2001
BSP60 ... BSP62
Switching time test circuit
Switching time waveform
0V
10%
90%
Vin
10%
Vout
-VCC
90%
90%
10%
td
tr
t on
ts
tf
t off
EHN00068
1) Pulse test: t ≤ 300µs, D = 2%
3
Nov-30-2001
BSP60 ... BSP62
Total power dissipation Ptot = f(TS)
External resistance R BE = f (TA)**
VCB = V CEmax
** RBEmax for thermal stability
10 7
1650
mW
R BE
1350
BSP 60...62
EHP00666
Ω
5
P tot
1200
1050
900
10 6
750
600
5
450
300
150
0
0
15
30
45
60
75
90 105 120
10 5
°C 150
TS
0
50
DC current gain hFE = f (I C)
Ptotmax / PtotDC = f (tp )
VCE = 10V
BSP 60...62
Ptot max
Ptot DC
10 5
EHP00273
tp
D=
T
tp
˚C
150
TA
Permissible pulse load
10 3
100
h FE
BSP 60...62
EHP00667
5
T
10 2
10 4
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
10 3
5
10 0
10 -6
5
10 -5
10 -4
10 -3
10 -2
s
10 2
10 1
10 0
10 2
10 3
mA 10 4
ΙC
tp
4
Nov-30-2001
BSP60 ... BSP62
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC = f (VCEsat ), IB - parameter
IC = f (VBEsat), I B - parameter
10 3
ΙC
BSP 60...62
EHP00669
mA
10 3
ΙC
5
BSP 60...62
EHP00670
mA
5
Ι B = 0.5 mA
Ι B = 0.5 mA
4 mA
10
4 mA
2
10 2
5
5
10 1
10 1
0
V
1
2
V CE sat
0
1
2
V
3
V BE sat
Transition frequency fT = f (IC)
VCE = 10V, f = 100MHz
10 3
BSP 60...62
EHP00668
MHz
fT
5
10 2
5
10 1
10 1
5
10 2
mA
10 3
ΙC
5
Nov-30-2001
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