BSP60 ... BSP62 PNP Silicon Darlington Transistors High collector current 4 Low collector-emitter saturation voltage Complementary types: BSP50 ... BSP52 (NPN) 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B 2=C 3=E 4=C SOT223 BSP62 BSP 62 1=B 2=C 3=E 4=C SOT223 BSP60 BSP61 BSP62 VPS05163 Package Maximum Ratings Parameter Symbol Unit Collector-emitter voltage VCEO 45 60 80 Collector-base voltage VCBO 60 80 90 Emitter-base voltage VEBO 5 5 5 DC collector current IC 1 Peak collector current ICM 2 Base current IB 100 mA Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg V A -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSP60 ... BSP62 Electrical Characteristics at TA = 25°C, unless othertwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BSP60 45 - - BSP61 60 - - BSP62 80 - - BSP60 60 - - BSP61 80 - - BSP62 90 - - V(BR)EBO 5 - - ICES - - 10 IEBO - - 10 V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 V V(BR)CEO Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current µA VCE = VCEOmax , VBE = 0 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) - hFE IC = 150 mA, VCE = 10 V 1000 - - IC = 500 mA, VCE = 10 V 2000 - - Collector-emitter saturation voltage1) V VCEsat IC = 500 mA, IB = 0.55 mA - - 1.3 IC = 1 A, IB = 1 mA - - 1.8 IC = 500 mA, IB = 0.5 mA - - 1.9 IC = 1 A, IB = 1 mA - - 2.2 fT - 200 - MHz Turn-on time t(on) - 400 - ns IC = 500 mA, IB1 = IB2 = 0.5mA Turn-off time t(off) - 1500 - Base-emitter saturation voltage 1) VBEsat AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz IC = 500 mA, IB1 = IB2 = 0.5mA 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-30-2001 BSP60 ... BSP62 Switching time test circuit Switching time waveform 0V 10% 90% Vin 10% Vout -VCC 90% 90% 10% td tr t on ts tf t off EHN00068 1) Pulse test: t ≤ 300µs, D = 2% 3 Nov-30-2001 BSP60 ... BSP62 Total power dissipation Ptot = f(TS) External resistance R BE = f (TA)** VCB = V CEmax ** RBEmax for thermal stability 10 7 1650 mW R BE 1350 BSP 60...62 EHP00666 Ω 5 P tot 1200 1050 900 10 6 750 600 5 450 300 150 0 0 15 30 45 60 75 90 105 120 10 5 °C 150 TS 0 50 DC current gain hFE = f (I C) Ptotmax / PtotDC = f (tp ) VCE = 10V BSP 60...62 Ptot max Ptot DC 10 5 EHP00273 tp D= T tp ˚C 150 TA Permissible pulse load 10 3 100 h FE BSP 60...62 EHP00667 5 T 10 2 10 4 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 3 5 10 0 10 -6 5 10 -5 10 -4 10 -3 10 -2 s 10 2 10 1 10 0 10 2 10 3 mA 10 4 ΙC tp 4 Nov-30-2001 BSP60 ... BSP62 Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), IB - parameter IC = f (VBEsat), I B - parameter 10 3 ΙC BSP 60...62 EHP00669 mA 10 3 ΙC 5 BSP 60...62 EHP00670 mA 5 Ι B = 0.5 mA Ι B = 0.5 mA 4 mA 10 4 mA 2 10 2 5 5 10 1 10 1 0 V 1 2 V CE sat 0 1 2 V 3 V BE sat Transition frequency fT = f (IC) VCE = 10V, f = 100MHz 10 3 BSP 60...62 EHP00668 MHz fT 5 10 2 5 10 1 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001