NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design Pin 1 Indicator 12.0dB Gain, +13.7dBm P1dB@2GHz 1 2 3 8 9 4 7 6 5 RF OUT High P1dB of [email protected] and [email protected] Ground Ground Single Power Supply Operation RF IN 50Ω I/O Matched for High Freq. Use Applications Narrow and Broadband Commercial and Military Radio Designs Functional Block Diagram Linear and Saturated Amplifiers Product Description Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-302 provides flexibility and stability. The NBB-302 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit designs. Ordering Information NBB-302 NBB-302-T1 NBB-302-E NBB-X-K1 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz Tape & Reel, 1000 Pieces Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer’s Tool Kit Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT 9 SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A6 DS060124 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 8 NBB-302 Absolute Maximum Ratings Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW Device Current 70 mA Channel Temperature 200 °C Operating Temperature -45 to +85 °C Storage Temperature -65 to +150 °C Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Specification Typ. Max. Unit Overall Small Signal Power Gain, S21 Condition VD =+3.9V, ICC =50mA, Z0 =50Ω, TA =+25°C 12.0 13.5 dB 11.0 13.0 dB f=1.0GHz to 4.0GHz 12.5 dB f=4.0GHz to 6.0GHz 9.0 f=0.1GHz to 1.0GHz 10.5 dB f=6.0GHz to 12.0GHz 9.5 (avg.) dB f=12.0GHz to 14.0GHz Gain Flatness, GF ±0.6 dB Input and Output VSWR 2.4:1 f=0.1GHz to 8.0GHz f=0.1GHz to 4.0GHz 2.0:1 f=4.0GHz to 12.0GHz 2.8:1 f=12.0GHz to 15.0GHz Bandwidth, BW 12.5 GHz BW3 (3dB) Output Power @ -1dB Compression, P1dB 13.7 dBm f=2.0GHz 14.8 dBm f=6.0GHz 11.0 dBm f=14.0GHz 5.5 dB f=3.0GHz +23.5 dBm f=2.0GHz -15 dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, δGT/δT 3.6 3.9 -0.0015 4.2 f=0.1GHz to 12.0GHz V dB/°C MTTF versus Temperature @ ICC =50mA Case Temperature Junction Temperature MTTF 85 °C 122.9 °C >1,000,000 hours 194 °C/W Thermal Resistance θJC 2 of 8 J T – T CASE --------------------------- = θ JC ( °C ⁄ Watt ) V D ⋅ I CC 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A6 DS060124 NBB-302 Pin 1 Function GND 2 3 4 GND GND RF IN 5 6 7 8 GND GND GND RF OUT Description Interface Schematic Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 1. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. Same as pin 1. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: ( V CC – V DEVICE ) R = -----------------------------------------I CC 9 GND RF OUT RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 1. Package Drawing 2.94 min 3.28 max Pin 1 Indicator 1.00 min 1.50 max N3 Lid ID 1.70 min 1.91 max 2.39 min 2.59 max 0.025 min 0.125 max 0.50 nom 0.50 nom Pin 1 Indicator RF OUT Ground Ground RF IN 0.98 min 1.02 max 0.38 nom All Dimensions in Millimeters 0.37 min 0.63 max Notes: 1. Solder pads are coplanar to within ±0.025 mm. 2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm. 3. Mark to include two characters and dot to reference pin 1. Rev A6 DS060124 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 8 NBB-302 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VCC RCC 1,2,3 4 In L choke (optional) 8 C block 5,6,7,9 Out C block VDEVICE VD = 3.9 V Recommended Bias Resistor Values Supply Voltage, VCC (V) 5 8 10 12 15 20 Bias Resistor, RCC (Ω) 22 81 122 162 222 322 Application Notes Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 841LMI from Ablestik. Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160°C±10°C. 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A6 DS060124 NBB-302 Extended Frequency InGaP Amplifier Designer’s Tool Kit NBB-X-K1 This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. • • • • 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation Rev A6 DS060124 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 8 NBB-302 Tape and Reel Dimensions All Dimensions in Millimeters T A B S D O F 330 mm (13") REEL ITEMS Diameter Micro-X, MPGA SYMBOL SIZE (mm) B 330 +0.25/-4.0 FLANGE Thickness Space Between Flange HUB T F Outer Diameter Spindle Hole Diameter O S Key Slit Width Key Slit Diameter A D SIZE (inches) 13.0 +0.079/-0.158 18.4 MAX 12.4 +2.0 0.724 MAX 0.488 +0.08 102.0 REF 4.0 REF 13.0 +0.5/-0.2 0.512 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN PIN 1 User Direction of Feed 4.0 All dimensions in mm See Note 1 2.00 ± 0.05 0.30 ± 0.05 R0.3 MAX. 1.5 See Note 6 +0.1 -0.0 A 1.5 MIN. 1.75 5.50 ± 0.05 See Note 6 12.00 ± 0.30 Bo Ko Ao 8.0 A R0.5 TYP SECTION A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. 6 of 8 Ao = 3.6 MM Bo = 3.6 MM Ko = 1.7 MM 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A6 DS060124 NBB-302 Device Voltage versus Amplifier Current P1dB versus Frequency at +25°C 16.0 4.00 14.0 3.95 P1dB (dBm) Device Voltage, V D (V) 12.0 3.90 3.85 10.0 8.0 6.0 3.80 4.0 3.75 2.0 3.70 0.0 35.00 40.00 45.00 50.00 55.00 2.0 60.00 4.0 6.0 8.0 POUT/Gain versus PIN at 6 GHz 12.0 14.0 16.0 POUT/Gain versus PIN at 14 GHz 18.0 14.0 16.0 12.0 14.0 10.0 POUT (dBm), Gain (dB) POUT (dBm), Gain (dB) 10.0 Frequency (GHz) Amplifier Current, ICC (mA) 12.0 10.0 8.0 6.0 4.0 8.0 6.0 4.0 2.0 0.0 Pout (dBm) 2.0 Pout (dBm) -2.0 Gain (dB) Gain (dB) 0.0 -4.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 PIN (dBm) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 PIN (dBm) Third Order Intercept versus Frequency at +25°C 30.0 28.0 26.0 24.0 Output IP3 (dBm) 22.0 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Frequency (GHz) Rev A6 DS060124 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 8 NBB-302 Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S12 versus Frequency at +25°C 0.0 -5.0 -5.0 S12 (dB) S11 (dB) S11 versus Frequency at +25°C 0.0 -10.0 -15.0 -10.0 -15.0 -20.0 -20.0 0.0 5.0 10.0 15.0 20.0 0.0 5.0 Frequency (GHz) 15.0 20.0 S22 versus Frequency at +25°C 20.0 0.0 15.0 -5.0 S22 (dB) S21 (dB) S21 versus Frequency at +25°C 10.0 5.0 -10.0 -15.0 0.0 -20.0 0.0 5.0 10.0 Frequency (GHz) 8 of 8 10.0 Frequency (GHz) 15.0 20.0 0.0 5.0 10.0 15.0 20.0 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A6 DS060124