NCE Power NCE7578 Nce n-channel enhancement mode power mosfet Datasheet

NCE7578
http://www.ncepower.com
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
Product Summary
The NCE7578 uses advanced trench technology and
BVDSS
typ.
84
V
design to provide excellent RDS(ON) with low gate charge.
RDS(ON)
typ.
6.8
mΩ
max.
8.0
mΩ
78
A
This device is suitable for use in PWM, load switching and
general purpose applications.
ID
Features
● VDS=75V;ID=78A@ VGS=10V;
100% UIS TESTED!
RDS(ON)<8mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE7578
NCE7578
TO-220-3L
-
-
-
Table 1.
Absolute Maximum Ratings (TA=25℃)
Parameter
Symbol
Value
Unit
Drain-Source Voltage (VGS=0V)
VDS
75
V
Gate-Source Voltage (VDS=0V)
VGS
±25
V
Drain Current (DC) at Tc=25℃
ID (DC)
78
A
ID (DC)
75
A
IDM (pluse)
300
A
dv/dt
30
V/ns
PD
160
W
1.07
W/℃
EAS
550
mJ
TJ,TSTG
-55 To 175
℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy
(Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH
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Table 2.
Pb-Free Product
Thermal Characteristic
Parameter
Symbol
Value
Unit
Thermal Resistance,Junction-to-Case(Maximum)
RthJC
0.94
℃/W
Thermal Resistance,Junction-to-Ambient (Maximum)
RthJA
63
℃/W
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75
V
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=75V,VGS=0V
1
μA
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=75V,VGS=0V
10
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
6.8
8
mΩ
Forward Transconductance
gFS
VDS=5V,ID=30A
60
S
Input Capacitance
Clss
3100
PF
Output Capacitance
Coss
310
PF
Reverse Transfer Capacitance
Crss
260
PF
Total Gate Charge
Qg
100
nC
Gate-Source Charge
Qgs
18
nC
Gate-Drain Charge
Qgd
27
nC
18.2
nS
2
Dynamic Characteristics
VDS=25V,VGS=0V,
F=1.0MHz
VDS=30V,ID=30A,
VGS=10V
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=15Ω
15.6
nS
td(off)
VGS=10V,RG=2.5Ω
70.5
nS
13.8
nS
Turn-Off Delay Time
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
80
A
Pulsed Source-drain current(Body Diode)
ISDM
320
A
1.2
V
53
nS
105
nC
(Note 1)
Tj=25℃,ISD=40A,VGS=0V
VSD
Forward on voltage
(Note 1)
Reverse Recovery Time
(Note 1)
trr
Reverse Recovery Charge
Qrr
Forward Turn-on Time
ton
Tj=25℃,IF=75A,di/dt=100A/μs
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting Tj=25℃
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Test circuit
1)EAS test circuits
2)Gate charge test circuit:
3)Switch Time Test Circuit:
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
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Figure6. RDS(ON) vs Junction Temperature
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Figure7. BVDSS vs Junction Temperature
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
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TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
4.470
4.670
0.176
0.184
A1
2.520
2.820
0.099
0.111
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
10.010
10.350
0.394
0.407
E
8.500
8.900
0.335
0.350
E1
12.060
12.460
0.475
0.491
2.540(TYP.)
e
0.100(TYP.)
e1
4.980
5.180
0.196
0.204
F
2.590
2.890
0.102
0.114
H
8.440 REF.
0.332 REF.
h
0.000
0.300
0.000
0.012
L
13.400
13.800
0.528
0.543
L1
3.560
3.960
0.140
0.156
V
6.360 REF.
0.250 REF.
I
6.300 REF.
0.248 REF.
Φ
3.735
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3.935
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0.155
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ATTENTION:
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