Transistors SMD Type NPN Transistors CZT5551 (KZT5551) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 ■ Features 7.0±0.3 ● High Voltage ● High Voltage Amplifier Application 3.50±0.2 4 1 2 3 0.250 2.30 (typ) 1.80 (max) Gauge Plane 0.02 ~ 0.1 1.Base 2.Collector 0.70±0.1 3.Emitter 4.Collector 4.60 (typ) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 6 IC 0.6 Collector Current - Continuous V A PC 1 W RθJA 125 ℃/W TJ 150 Tstg -55 to 150 Collector Power Dissipation Thermal Resistance From Junction To Ambient Unit Junction Temperature Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100uA， IE= 0 180 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 160 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 50 Emitter cut-off current IEBO VEB= 4V , IC=0 50 Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain VCE(sat) VBE(sat) Unit V 6 IC=10m A, IB=1mA 0.15 IC=50m A, IB=5mA 0.2 IC=10m A, IB=1mA 1 IC=50m A, IB=5mA 1 hFE(1) VCE= 5V, IC= 1mA 80 hFE(2) VCE= 5V, IC= 10mA 80 hFE(3) VCE= 5V, IC= 50mA 30 V 250 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 6 Emitter input capacitance Cib VBE=0.5V, IC=0, f=1MHz 20 Transition frequency fT VCE= 10V, IC= 10mA,f=1MHz 100 nA 300 pF MHz www.kexin.com.cn 1 Transistors SMD Type NPN Transistors CZT5551 (KZT5551) ■ Typical Characterisitics Static Characteristic 18 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 70uA 12 60uA 50uA 9 40uA 6 30uA 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 10 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) Ta=25℃ 0.6 Ta=100℃ 0.4 1 10 COLLECTOR CURRENT IC —— 200 100 IC 10 VCEsat —— 0.3 0.8 0.2 0.1 1 COLLECTOR CURRENT IC (mA) 200 Ta=25℃ 1 10 Cob / Cib 100 —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 Ta=100℃ Ta=25℃ 10 1 0.2 100 Ta=100℃ COMMON EMITTER VCE=5V 100 200 IC COLLECTOR CURRENT VBE 100 (mA) 0.1 0.01 200 IC β=10 (mA) CAPACITANCE C (pF) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 100 10 12 (V) β=10 COLLECTOR CURRENT Ta=100℃ IB=20uA 3 0 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 80uA 15 IC hFE —— 500 90uA 0.4 0.6 BASE-EMITTER VOLTAGE fT 150 —— 0.8 10 Cob 1 0.1 1.0 VBE(V) IC Ta=25℃ Cib 1 REVERSE VOLTAGE PC 1.2 —— V (V) 10 20 Ta Ta=25℃ COLLECTOR POWER DISSIPATION PC (W) TRANSITION FREQUENCY fT (MHz) VCE=10V 100 50 1 2 10 3 COLLECTOR CURRENT www.kexin.com.cn IC (mA) 20 30 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150