FLM7785-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 42.8 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 3400 5200 mA Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Transconductance gm VDS = 5V, IDS = 2200mA - 3400 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0 V IGS = -170µA -5.0 - - V 39.0 39.5 - dBm 7.5 8.5 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Idsr ηadd VDS =10V, IDS = 0.65 IDSS (Typ.), f = 7.7 ~ 8.5 GHz, ZS=ZL= 50 ohm - 2200 2600 mA - 34 - % - - ±0.6 dB -44 -46 - dBc Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 8.5 GHz, ∆f = 10 MHz 2-Tone Test Pout = 28.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 3.0 3.5 °C/W ∆Tch 10V x Idsr x Rth - - 80 °C Channel Temperature Rise CASE STYLE: IB Edition 1.4 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM7785-8F C-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER 34 30 20 10 VDS=10V f1 = 8.5 GHz f2 = 8.51 GHz 2-tone test 32 Pout 30 -20 -30 28 26 -40 IM3 -50 24 0 50 100 150 200 Case Temperature (°C) 14 16 18 20 22 24 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level VDS=10V P1dB 39 29.5dBm 38 27.5dBm 37 36 25.5dBm 35 7.7 42 Pin=31.5dBm 40 7.9 8.1 8.3 Output Power (dBm) Output Power (dBm) 41 OUTPUT POWER vs. INPUT POWER VDS=10V f = 8.1 GHz 40 Pout 38 45 36 34 30 ηadd 15 32 8.5 Frequency (GHz) 0 30 22 24 26 28 30 Input Power (dBm) 2 32 ηadd (%) OUTPUT POWER vs. FREQUENCY IM3 (dBc) 40 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) POWER DERATING CURVE FLM7785-8F C-Band Internally Matched FET S11 S22 +j50 +j100 +j25 7.8 7.7 7.9 7.6 +j10 0 S21 S12 +90° 7.8 7.9 8.0 7.7 7.9 8.7 8.1 7.6 7.5 GHz 8.3 8.2 7.5 GHz 8.3 8.6 8.4 25 8.5 8.5 8.7 7.5 GHz +j250 8.0 7.7 7.5 GHz 8.1 7.9 8.2 8.1 250 180° 8.3 0.1 0.2 0° SCALE FOR |S12| 8.3 8.4 1 8.7 -j25 SCALE FOR |S21| -j250 -j10 -j100 2 8.7 3 8.5 8.5 8.6 4 -90° -j50 S-PARAMETERS VDS = 10V, IDS = 2200mA FREQUENCY (MHZ) 7500 7600 7700 7800 7900 8000 8100 8200 8300 8400 8500 8600 8700 S11 MAG .402 .428 .440 .440 .428 .395 .342 .257 .132 .038 .248 .462 .634 S21 ANG 153.9 137.7 123.0 110.3 97.9 86.5 73.5 61.1 46.2 -156.8 -171.2 169.6 150.6 S12 S22 MAG ANG MAG ANG MAG 3.423 3.344 3.271 3.219 3.196 3.204 3.244 3.299 3.345 3.324 3.168 2.817 2.337 133.7 119.5 105.2 90.5 75.9 60.8 44.5 26.9 7.5 -14.4 -38.6 -63.6 -87.2 .094 .091 .090 .089 .088 .087 .088 .091 .093 .095 .091 .083 .068 106.1 93.1 79.1 64.6 51.4 39.0 21.9 6.3 -11.8 -33.4 -56.7 -81.0 -104.4 .331 .340 .343 .348 .345 .347 .354 .352 .331 .284 .186 .069 .147 3 ANG 95.4 88.5 82.8 77.7 72.8 67.1 61.1 52.6 41.7 27.2 0.0 -59.7 -164.2 FLM7785-8F C-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 2 12.9±0.2 (0.508) 2-R 1.6±0.15 (0.063) 3 2.6±0.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.422) Unit: mm(inches) 17.0±0.15 (0.669) 21.0±0.15 (0.827) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4