NXP BC875 Npn darlington transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC875; BC879
NPN Darlington transistors
Product specification
Supersedes data of 1999 May 28
2004 Nov 05
Philips Semiconductors
Product specification
NPN Darlington transistors
BC875; BC879
FEATURES
PINNING
• High DC current gain (min. 1000)
PIN
DESCRIPTION
• High current (max. 1 A)
1
base
• Low voltage (max. 80 V)
2
collector
• Integrated diode and resistor.
3
emitter
APPLICATIONS
handbook, halfpage
• Relay drivers.
2
1
1
2
DESCRIPTION
3
NPN Darlington transistor in a TO-92 (SOT54) plastic
package. PNP complement: BC878.
MAM307
Fig.1
3
Simplified outline (TO-92; SOT54) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC875
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
BC879
2004 Nov 05
2
VERSION
SOT54
Philips Semiconductors
Product specification
NPN Darlington transistors
BC875; BC879
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
60
V
−
100
V
BC875
−
45
V
BC879
−
80
V
BC875
BC879
VCES
MIN.
collector-emitter voltage
VBE = 0 V
VEBO
emitter-base voltage
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IB
base current (DC)
Ptot
total power dissipation
Tstg
open collector
−
0.2
A
−
0.83
W
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Nov 05
3
VALUE
UNIT
150
K/W
Philips Semiconductors
Product specification
NPN Darlington transistors
BC875; BC879
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
CONDITIONS
collector-emitter cut-off current
TYP.
MAX. UNIT
VBE = 0 V
BC875
VCE = 45 V
−
−
50
nA
BC879
VCE = 80 V
−
−
50
nA
−
−
50
nA
IC = 150 mA
1000
−
−
IC = 0.5 A
IEBO
emitter-base cut-off current
VEB = 4 V; IC = 0 A
hFE
DC current gain
VCE = 10 V; see Fig.2
VCEsat
MIN.
collector-emitter saturation voltage
2000
−
−
IC = 0.5 A; IB = 0.5 mA
−
−
1.3
V
IC = 1 A; IB = 1 mA
−
−
1.8
V
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 1 mA
−
−
2.2
V
fT
transition frequency
VCE = 5 V; IC = 0.5 A; f = 100 MHz
−
200
−
MHz
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
−
500
−
ns
−
1300
−
ns
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
MGD838
5000
handbook, full pagewidth
hFE
4000
3000
2000
1000
0
10−1
1
10
VCE = 10 V.
Fig.2 DC current gain; typical values.
2004 Nov 05
4
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN Darlington transistors
BC875; BC879
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Nov 05
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
Philips Semiconductors
Product specification
NPN Darlington transistors
BC875; BC879
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Nov 05
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
R75/05/pp7
Date of release: 2004
Nov 05
Document order number:
9397 750 13576
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