CHA2069-FAA 16-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4.5V/55mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems. UMS A2069 YYWW 30 Main Features 25 ■ Broadband performance 16-32GHz ■ 2.5dB typical Noise Figure ■ 20dBm 3rd order intercept point ■ 22dB gain ■ Low DC power consumption ■ 6x6mm² metal ceramic hermetic package Linear Gain 20 15 +25 C 10 -40 C +85 C 5 0 10 15 20 25 30 35 40 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz NF Noise figure 2.5 dB G Small signal Gain 22 dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA2069-FAA2356 - 21 Dec 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +4.5V, Pads B=D=E=Gnd, C=F=NC. Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz G Gain (1) 22 dB Gain flatness (1) dB G 1 (1) NF Noise figure 2.5 dB IS11I Input return loss (1) 10 dB IS22I Output return loss (1) 10 dB IP3 3rd order intercept point 20 dBm P1dB Output power at 1dB gain compression 10 dBm Id Drain bias current 55 75 mA (1) These values are representative of on board measurements as defined on the drawing 99622 (see below). Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit (3) Vd Drain bias voltage 5 V Id Drain bias current 120 mA (2) Pin Maximum peak input power overdrive +15 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) See chip biasing options Ref. : DSCHA2069-FAA2356 - 21 Dec 12 2/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Typical Package Sij parameters For low current configuration in 99622 board - in connector plane Temp = +25°C, Vd= +4.5V, B, D, E grounded, C=F=NC. FREQ (GHz) 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 27.00 28.00 29.00 30.00 31.00 32.00 33.00 34.00 35.00 36.00 37.00 38.00 39.00 40.00 dBS11 -5.26 -5.98 -6.67 -7.74 -9.37 -13.54 -13.99 -17.92 -21.77 -14.36 -14.24 -16.32 -17.07 -15.81 -12.47 -13.44 -18.05 -16.22 -12.46 -13.11 -16.84 -14.87 -23.40 -24.20 -10.19 -5.80 -5.95 -4.83 -3.14 -4.01 -4.42 PhS11 (°) -139.50 86.98 -32.51 -149.00 94.70 -39.12 -176.10 76.36 -111.30 130.00 29.75 -77.70 177.50 68.76 -20.93 -99.95 152.50 36.49 -34.87 -108.80 129.50 9.06 -94.34 48.25 -153.90 121.30 12.35 -135.40 132.90 42.61 -78.52 Ref. : DSCHA2069-FAA2356 - 21 Dec 12 dBS12 -52.14 -51.10 -51.48 -50.15 -48.25 -46.94 -47.79 -48.41 -49.72 -50.28 -54.55 -55.85 -59.32 -58.70 -60.84 -58.67 -54.54 -52.21 -54.01 -55.02 -55.63 -54.07 -49.78 -54.43 -46.78 -48.48 -52.86 -47.47 -48.04 -41.73 -42.89 PhS12 (°) 19.61 -106.90 112.80 -20.08 -153.70 78.00 -43.35 -154.50 98.54 -8.54 -126.00 144.70 46.11 -88.09 132.70 -23.64 -175.20 45.44 -78.85 163.10 28.57 -131.40 56.26 142.00 -61.91 167.80 84.83 27.68 -60.40 -159.90 103.70 3/10 dBS21 14.17 17.82 20.05 21.21 21.90 22.14 21.92 21.38 21.14 21.29 21.01 20.99 21.21 21.43 21.20 20.89 20.47 20.14 19.80 19.84 20.13 19.84 20.25 19.50 17.52 14.98 12.65 8.27 4.76 2.29 -0.19 PhS21 (°) 47.38 -106.00 103.30 -42.75 175.30 35.08 -100.80 127.20 -0.31 -128.20 104.00 -21.16 -147.50 84.81 -44.78 -171.90 61.54 -64.19 169.80 45.70 -84.86 145.00 9.39 -126.30 89.64 -42.68 179.90 47.13 -73.37 165.10 37.92 dBS22 -4.80 -6.29 -9.90 -16.62 -23.95 -21.77 -18.77 -11.87 -9.37 -11.17 -16.54 -16.86 -15.65 -22.00 -14.18 -11.43 -10.51 -12.44 -9.41 -9.90 -11.08 -9.06 -12.28 -13.52 -11.71 -26.11 -8.62 -6.31 -14.00 -11.17 -10.92 PhS22 (°) 125.30 3.35 -94.31 179.50 87.51 65.93 -48.01 -167.20 112.50 28.74 -87.36 122.30 24.26 -3.87 -13.27 -113.10 143.30 33.96 -77.53 -164.20 72.67 -23.83 -92.82 151.00 96.35 -42.73 -178.20 137.90 68.03 -118.80 137.40 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Typical boards Measurements Temp = +25°C, Vd=4.5V Pads B, D, E grounded, C=F=NC. Measurements in the connector planes, using the proposed land pattern & board 99622. Linear Gain versus Frequency and Temperature 30 25 Linear Gain 20 15 +25 C 10 -40 C +85 C 5 0 10 15 20 25 30 35 30 35 40 Frequency (GHz) Input & Output matching 0 -2 -4 dBS11 S11 & S22 (dB) -6 dBS22 -8 -10 -12 -14 -16 -18 -20 10 15 20 25 40 Frequency (GHz) Ref. : DSCHA2069-FAA2356 - 21 Dec 12 4/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Typical boards Measurements Temp = +25°C, Vd=4.5V Pads B, D, E grounded, C=F=NC. Measurements in the connector planes, using the proposed land pattern & board 99622. Noise Figure versus Frequency and Temperature 4,5 4,0 Noise Figure (dB) 3,5 3,0 2,5 2,0 1,5 +25 C 1,0 +85 C -40 C 0,5 0,0 14 16 18 20 22 24 26 28 30 32 34 Frequency (GHz) Output power at 1dB compression versus frequency 14 12 Ouput P1dB (dBm) 10 8 6 4 2 0 16 18 20 22 24 26 28 30 32 Frequency (GHz) Ref. : DSCHA2069-FAA2356 - 21 Dec 12 5/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Package outline (1) All dimensions are in mm (1) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA2069-FAA2356 - 21 Dec 12 6/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4003 / 8mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. ■ Decoupling capacitors of 10nF ±10% are recommended for all DC accesses. Ref. : DSCHA2069-FAA2356 - 21 Dec 12 7/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd The two requirements are: N°1: Not exceed Vds = 3.5Volt (internal Drain to Source voltage). N°2: Not biased in such a way that Vgs becomes positive. (internal Gate to Source voltage) We propose two standard biasing: Low Noise and low consumption: Low Noise and higher output power Ref. : DSCHA2069-FAA2356 - 21 Dec 12 Vd = 4.5V and B, D, E grounded. All the other pads non connected (NC). Idd = 55mA & Pout-1dB = 10dBm Typical. Vd = 4.5V and B, C, F grounded. All the other pads non connected (NC). Idd = 75mA & Pout-1dB = 12dBm Typical. 8/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier Note Ref. : DSCHA2069-FAA2356 - 21 Dec 12 9/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2069-FAA 16-32GHz Low Noise Amplifier SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017 available at http://www.ums-gaas.com. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. FAA Type Surface Mount Hermetic Package Refer to the application note AN0024 available at http://www.ums-gaas.com for assembly recommendations for the UMS FAA package products. Ordering Information Leadless hermetic package: CHA2069-FAA Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA2069-FAA2356 - 21 Dec 12 10/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34