DPG 30 C 200 HB advanced V RRM = 200 V I FAV = 2x 15 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 30 C 200 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2007 IXYS all rights reserved typ. max. Unit 200 V VR = 200 V 1 µA VR = 200 V TVJ = 150 °C 0.08 mA TVJ = 25 °C 1.25 V 1.50 V 1.00 V 1.27 V TC = 140°C 15 A TVJ = 175°C 0.69 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A rectangular, d = 0.5 for power loss calculation only R thJC min. TVJ = 25 °C TVJ = 25 °C TVJ = 150 °C -55 17.3 mΩ 1.70 K/W 175 °C TC = 25 °C 90 W t = 10 ms (50 Hz), sine TVJ = 45°C 150 A IF = TVJ = 3 A °C tbd A TVJ = 25 °C 35 ns TVJ = °C tbd ns TVJ = 25 °C tbd pF TVJ = 25 °C 20 A; VR = 100 V -di F /dt = 200 A/µs VR = 100 V; f = 1 MHz Data according to IEC 60747and per diode unless otherwise specified 0629 DPG 30 C 200 HB advanced Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 50 0.25 -55 Weight A K/W 150 °C 6 MD mounting torque FC mounting force with clip 1) typ. 1) 0.8 20 g 1.2 120 Nm N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code Ordering Standard XXXXXX Part Name DPG 30 C 200 HB Similar Part DPG30C200PB DPG30C300HB DPG30C300PB DPG30C300PC IXYS reserves the right to change limits, conditions and dimensions. © 2007 IXYS all rights reserved D P G 30 C 200 HB abcdef YYWW Marking on Product DPG30C200HB Package TO-220 TO-247 TO-220 TO-263 (D2Pak) Delivering Mode Tube = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) Base Qty Code Key 30 505797 Voltage Class 200 300 300 300 Data according to IEC 60747and per diode unless otherwise specified 0629 DPG 30 C 200 HB advanced Outlines TO-247 Symbol A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 ØP1 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 IXYS reserves the right to change limits, conditions and dimensions. © 2007 IXYS all rights reserved Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 0629