TrenchHVTM Power MOSFET HiperFETTM IXFH150N17T VDSS ID25 = 175V = 150A Ω ≤ 12mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 175 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 175 V VGSM Transient ± 30 V ID25 TC = 25°C 150 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, pulse width limited by TJM 400 A IA TC = 25°C 75 A EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 15 V/ns PD TC = 25°C 830 W -55 ... +175 °C TJ TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 g TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque Weight G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z International standard package Avalanche rated z 175°C Operating Temperature z High current handling capability z Advantages z z z Easy to mount Space savings High power density Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. z BVDSS VGS = 0V, ID = 250μA 175 z VGS(th) VDS = VGS, ID = 3mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 5.0 V ±200 nA 5 TJ = 150°C VGS = 10V, ID = 0.5 • ID25, Notes 1 © 2008 IXYS CORPORATION, All rights reserved μA 250 μA 10 12 mΩ z z z z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications Synchronous rectification DS99895A(12/08) IXFH150N17T Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 75 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd TO-247 (IXFH) Outline 118 S 9800 pF 1110 pF 60 pF 22 ns 30 ns 58 ns 30 ns 155 nC 40 nC 47 nC 0.18 °C/W RthJC RthCH °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 150 A ISM Repetitive, Pulse width limited by TJM 400 A VSD IF = 50A, VGS = 0V, Note 1 1.2 V trr IF = 75A, VGS = 0V IRM -di/dt = 200A/μs VR = 85V QRM 96 ns 0.65 A 13.5 nC 1 2 ∅P 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH150N17T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 325 160 VGS = 10V 8V 7V 140 300 250 120 7V 225 100 ID - Amperes ID - Amperes VGS = 10V 8V 275 6V 80 60 200 175 150 6V 125 100 40 75 50 5V 20 5V 25 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2 4 6 160 12 14 16 3.2 VGS = 10V 8V 7V 140 VGS = 10V 2.8 RDS(on) - Normalized 120 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 6V 100 80 60 40 2.4 I D = 150A 2.0 I D = 75A 1.6 1.2 5V 0.8 20 0.4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 5.0 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 4.0 VGS = 10V 3.5 15V External Lead Current Limit 80 ---70 TJ = 175ºC 3.0 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 2.5 2.0 60 50 40 30 1.5 TJ = 25ºC 20 1.0 10 0.5 0 0 40 80 120 160 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH150N17T Fig. 7. Input Admittance Fig. 8. Transconductance 160 160 140 140 120 120 g f s - Siemens ID - Amperes TJ = - 40ºC 100 25ºC 100 TJ = 150ºC 25ºC - 40ºC 80 60 80 40 40 20 20 0 150ºC 60 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 VGS - Volts 100 120 140 160 120 140 160 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 180 6 VGS - Volts IS - Amperes 80 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 150 120 TJ = 150ºC 90 60 VDS = 85V I D = 25A I G = 10mA 5 4 3 TJ = 25ºC 60 2 1 30 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 80 100 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_150N17T(8W)12-02-08-A IXFH150N17T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 31 31 RG = 2Ω 30 30 VGS = 10V VDS = 85V 29 29 t r - Nanoseconds t r - Nanoseconds 32 28 27 26 25 I 24 I 23 D D = 75A = 37A TJ = 25ºC RG = 2Ω 28 VGS = 10V 27 VDS = 85V 26 25 24 TJ = 125ºC 23 22 22 21 21 20 25 35 45 55 65 75 85 95 105 115 35 125 40 45 50 55 60 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance --- 28 30 26 25 24 20 22 15 t f - Nanoseconds 35 4 5 6 7 8 9 80 I D = 37A 30 65 24 60 22 55 35 45 55 100 85 90 70 65 TJ = 25ºC 24 TJ = 25ºC 20 60 65 70 75 50 125 80 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 85 90 240 td(off) - tf --- 220 TJ = 125ºC, VGS = 10V VDS = 85V 200 I D = 37A 80 180 70 160 I 60 D = 75A 140 50 120 40 100 55 30 80 50 95 100 20 60 55 115 - Nanoseconds 75 28 50 105 d(off ) TJ = 25ºC 45 95 t 90 80 40 85 110 t f - Nanoseconds --- 32 35 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - RG = 2Ω, VGS = 10V VDS = 85V 22 65 TJ - Degrees Centigrade tf 26 70 26 25 95 30 75 I D = 75A 28 10 38 34 85 32 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current TJ = 125ºC 100 90 VDS = 85V RG - Ohms 36 95 --- 20 20 3 90 t d ( o f f ) - Nanoseconds 30 I D = 37A, 75A 2 85 RG = 2Ω, VGS = 10V 34 VDS = 85V 40 80 95 td(off) - tf 36 32 TJ = 125ºC, VGS = 10V t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - 75 38 34 tr 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 45 65 ID - Amperes 60 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_150N17T(8W)12-02-08-A