BWTECH MSF14N60 N-channel enhancement mode power mosfet Datasheet

MSF14N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS14N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Insulating package, front/back side insulating
voltage=2500V(AC)
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
14
A
Drain Current -Continuous (TC=100°C)
8.4
A
IDM
Drain Current Pulsed
56
A
EAS
Single Pulsed Avalanche Energy
53
mJ
IAR
Avalanche Current
14.0
A
EAR
Repetitive Avalanche Energy
16
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
ID
Publication Order Number: [MSF14N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF14N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
PD
Total Power Dissipation(@TC = 25 °C) 60 W
Derating Factor above 25 °C
Value
Unit
60
W
0.35
W/°C
Value
Unit
300
°C
-55 ~ 150
W
150
°C
• Drain current limited by maximum junction temperature
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
TL
Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
TSTG
Operating Junction Temperature
TJ
Storage Temperature
Note:
1. Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=14A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
4. Drain current limited by maximum junction temperature
Thermal characteristics
Symbol
Parameter
Max.
RθJC
Thermal Resistance,Junction-to-Case
2.58
RθJA
Thermal Resistance,Junction-to-Ambient
100
Units
°C/W
Static Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
2.0
--
4.0
V
--
--
0.55
Ω
--
V
--
V/°C
1
μA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,ID=3A
BVDSS
Drain-Source Breakdown Voltage
△BVDSS
Breakdown Voltage Temperature
/△TJ
Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Body Leakage , Forward
Publication Order Number: [MSF14N60]
VGS=0 V , ID=250μA
600
Tj=150°C
660
ID=250μA, Referenced
to 25°C
VDS=600V , VGS= 0 V
VDS=480V , TC= 125°C
VGS=±30
--
0.7
--
--
--
--
10
±100
nA
© Bruckewell Technology Corporation Rev. A -2014
MSF14N60
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
40
--
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDS=250 V, ID=14A,
--
10
--
ns
td(off)
Turn-Off Delay Time
VGS=10V , RG=9.1Ω
--
15
--
ns
tf
Turn-Off Fall Time
--
16
--
ns
Qg
Total Gate Charge
--
30
--
nC
Qgs
Gate-Source Charge
--
48
--
nC
Qgd
Gate-Drain Charge (Miller Charge)
--
34
--
nC
Min
Typ.
Max.
Units
--
2222
--
pF
--
180
--
pF
--
17
--
pF
Min
Typ.
Max.
Units
Dynamic Characteristics
Symbol
Parameter
CISS
VDS=250V,ID=14A,
VGS=10 V
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V, VGS=0V,
f=1.0MHz
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
VD=VG=0,
--
--
14
ISM
VS=1.3V
--
--
56
VSD
IS=12A , VGS= 0V
--
--
1.5
V
trr
IS=12A , VGS= 0V
--
392
--
ns
Qrr
diF/dt=100A/μs
--
3529
--
uC
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Publication Order Number: [MSF14N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF14N60
N-Channel Enhancement Mode Power MOSFET
Disclaimer
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Publication Order Number: [MSF14N60]
© Bruckewell Technology Corporation Rev. A -2014
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