LRC LMUN5333DW1T1G Dual bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network Datasheet

LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
LMUN5311DW1T1
Series
6
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
5
4
1
2
3
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
SOT-363/SC-88
• Reduces Component Count
• Pb-Free Package is available
MAXIMUM RATINGS
(T A = 25°C unless otherwise noted, common for Q 1
6
5
4
and Q 2 , – minus sign for Q 1 (PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T A = 25°C
Derate above 25°C
Symbol Value
50
V CBO
50
V CEO
100
IC
R θJA
Symbol
PD
Max
187 (Note 1.)
Unit
mW
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW/°C
670 (Note 1.)
490 (Note 2.)
Max
°C/W
3
2
MARKING DIAGRAM
6
5
4
XX
1
2
3
xx = Device Marking
= (See Page 2)
Unit
250 (Note 1.)
385 (Note 2.)
mW
2.0 (Note 1.)
3.0 (Note 2.)
mW/°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
R θJA
493 (Note 1.)
°C/W
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
R θJL
325 (Note 2.)
188 (Note 1.)
°C/W
1. FR–4 @ Minimum Pad
Q1
R1
1
Symbol
PD
R2
R2
Thermal Resistance –
Junction and Storage
Temperature
R1
Q2
Unit
Vdc
Vdc
mAdc
this data sheet.
208 (Note 2.)
T J , T stg
–55 to +150
°C
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN5311DW–1/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1(K)
R2(K)
Shipping
LMUN5311DW1T1
SOT-363
11
10
10
3000/Tape&Reel
LMUN5311DW1T1G
SOT-363
11(Pb-Free)
10
10
3000/Tape&Reel
LMUN5312DW1T1
SOT-363
12
22
22
3000/Tape&Reel
LMUN5312DW1T1G
SOT-363
12(Pb-Free)
22
22
3000/Tape&Reel
LMUN5313DW1T1
SOT-363
13
47
47
3000/Tape&Reel
LMUN5313DW1T1G
SOT-363
13(Pb-Free)
47
47
3000/Tape&Reel
LMUN5314DW1T1
SOT-363
14
10
47
3000/Tape&Reel
LMUN5314DW1T1G
SOT-363
14(Pb-Free)
10
47
3000/Tape&Reel
LMUN5315DW1T1
SOT-363
15
10
Ğ
3000/Tape&Reel
LMUN5315DW1T1G
SOT-363
15(Pb-Free)
10
Ğ
3000/Tape&Reel
LMUN5316DW1T1
SOT-363
16
4.7
Ğ
3000/Tape&Reel
LMUN5316DW1T1G
SOT-363
16(Pb-Free)
4.7
Ğ
3000/Tape&Reel
LMUN5330DW1T1
SOT-363
30
1
1
3000/Tape&Reel
LMUN5330DW1T1G
SOT-363
30(Pb-Free)
1
1
3000/Tape&Reel
LMUN5331DW1T1
SOT-363
31
2.2
2.2
3000/Tape&Reel
LMUN5331DW1T1G
SOT-363
31(Pb-Free)
2.2
2.2
3000/Tape&Reel
LMUN5332DW1T1
SOT-363
32
4.7
4.7
3000/Tape&Reel
LMUN5332DW1T1G
SOT-363
32(Pb-Free)
4.7
4.7
3000/Tape&Reel
LMUN5333DW1T1
SOT-363
33
4.7
47
3000/Tape&Reel
LMUN5333DW1T1G
SOT-363
33(Pb-Free)
4.7
47
3000/Tape&Reel
LMUN5334DW1T1
SOT-363
34
22
47
3000/Tape&Reel
LMUN5334DW1T1G
SOT-363
34(Pb-Free)
22
47
3000/Tape&Reel
LMUN5335DW1T1
SOT-363
35
2.2
47
3000/Tape&Reel
LMUN5335DW1T1G
SOT-363
35(Pb-Free)
2.2
47
3000/Tape&Reel
LMUN5311DW-2/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
kW
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.0
0.21
−
1.0
0.1
0.47
0.047
1.2
0.25
−
1.2
0.185
0.56
0.056
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) LMUN5330DW1T1/LMUN5331DW1T1
(IC = 10 mA, IB = 1 mA) LMUN5315DW1T1/LMUN5316DW1T1
LMUN5332DW1T1/LMUN5333DW1T1/LMUN5334DW1T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
VOL
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
LMUN5313DW1T1
Vdc
Vdc
LMUN5330DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5333DW1T1
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
Resistor Ratio LMUN5311DW1T1/LMUN5312DW1T1/LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1/LMUN5316DW1T1
LMUN5330DW1T1/LMUN5331DW1T1/LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
LMUN5311DW-3/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
OFF CHARACTERISTICS
LMUN5311DW1T1
LMUN5312DW1T1
LMUN5313DW1T1
LMUN5314DW1T1
LMUN5315DW1T1
LMUN5316DW1T1
LMUN5330DW1T1
LMUN5331DW1T1
LMUN5332DW1T1
LMUN5333DW1T1
LMUN5334DW1T1
LMUN5335DW1T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ALL LMUN5311DW1T1 SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
LMUN5311DW-4/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1 NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
−25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
50
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0.001
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
TA=−25°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
LMUN5311DW-5/29
10
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1 PNP TRANSISTOR
TA=−25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
100
100
25°C
75°C
TA=−25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
Figure 9. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 10. Output Current versus Input
Voltage
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
LMUN5311DW-6/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5312DW1T1 NPN TRANSISTOR
IC/IB = 10
25°C
TA=−25°C
0.1
75°C
0.01
0.001
0
20
−25°C
100
1
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
2
1
75°C
25°C
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 14. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
25°C
10
50
40
VCE = 10 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
LMUN5311DW-7/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5312DW1T1 PNP TRANSISTOR
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
40
TA=75°C
10
1
Figure 18. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 19. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
3
25°C
−25°C
100
10
50
VCE = 10 V
TA=−25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 20. Output Current versus Input Voltage
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
LMUN5311DW-8/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
10
1000
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5313DW1T1 NPN TRANSISTOR
TA=75°C
25°C
−25°C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
1
Figure 22. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25°C
75°C
0.6
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
VO = 5 V
0.001
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
100
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
10
Figure 25. Output Current versus Input Voltage
Figure 24. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 23. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
LMUN5311DW-9/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5313DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
1000
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
−25°C
1
0.1
0.01
0.001
50
25°C
TA=75°C
10
Figure 29. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 30. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
TA=−25°C
25°C
75°C
10
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
LMUN5311DW-10/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
300
1
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5314DW1T1 NPN TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
−25°C
150
100
50
0
80
1
2
4
6
Figure 32. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
40
45
50
25°C
−25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 35. Output Current versus Input Voltage
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 33. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
TA=−25°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 36. Input Voltage versus Output Current
LMUN5311DW-11/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5314DW1T1 PNP TRANSISTOR
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
−25°C
120
100
80
60
40
20
0
80
1
2
4
6
Figure 37. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
Figure 39. Output Capacitance
50
25°C
−25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 40. Output Current versus Input Voltage
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 38. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
25°C
75°C
TA=−25°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
LMUN5311DW-12/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
100
Figure 43. DC Current Gain
12
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 44. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5315DW1T1 NPN TRANSISTOR
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 46. Input Voltage versus Output Current
LMUN5311DW-13/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
100
Figure 48. DC Current Gain
100
4
IC, COLLECTOR CURRENT (mA)
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 49. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 50. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5315DW1T1 PNP TRANSISTOR
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 51. Input Voltage versus Output Current
LMUN5311DW-14/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 52. VCE(sat) versus IC
100
Figure 53. DC Current Gain
12
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 54. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 55. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5316DW1T1 NPN TRANSISTOR
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 56. Input Voltage versus Output Current
LMUN5311DW-15/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10
1
50
25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
100
Figure 58. DC Current Gain
4.5
3
2.5
2
1.5
1
0.5
75°C
10
25°C
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 59. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 60. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5316DW1T1 PNP TRANSISTOR
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 61. Input Voltage versus Output Current
LMUN5311DW-16/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5330DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
100
75°C
10
25°C
TA = −25°C
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
1
30
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
10
100
75°C
10
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
100
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
TA = −25°C
1
25°C
VO = 0.2 V
0.1
0.001
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 64. Output Current versus Input Voltage
75°C
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 65. Input Voltage versus Output Current
LMUN5311DW-17/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5330DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
75°C
10
25°C
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 68. Output Capacitance
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 69. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 70. Input Voltage versus Output Current
LMUN5311DW-18/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5331DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
TA = −25°C
1
30
25°C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 71. VCE(sat) versus IC
Figure 72. DC Current Gain
12
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
10 75°C
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 73. Output Capacitance
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 74. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 75. Input Voltage versus Output Current
LMUN5311DW-19/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5331DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 76. VCE(sat) versus IC
100
Figure 77. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 78. Output Capacitance
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 79. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
75°C
10
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 80. Input Voltage versus Output Current
LMUN5311DW-20/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5332DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
25°C
10
TA = −25°C
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
12
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 83. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 84. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
TA = −25°C
25°C
1
75°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 85. Input Voltage versus Output Current
LMUN5311DW-21/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5332DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 86. VCE(sat) versus IC
100
Figure 87. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
6
f = 1 MHz
IE = 0 V
TA = 25°C
5
4
3
2
1
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 88. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 89. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 90. Input Voltage versus Output Current
LMUN5311DW-22/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5333DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 91. VCE(sat) versus IC
100
Figure 92. DC Current Gain
8
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
7
6
5
4
3
2
1
0
75°C
10
25°C
1
0.1
TA = −25°C
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 93. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 94. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 95. Input Voltage versus Output Current
LMUN5311DW-23/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5333DW1T1 PNP TRANSISTOR
75°C
−25°C
25°C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75°C
25°C
10
1
30
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 96. VCE(sat) versus IC
Figure 97. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 98. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 99. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 100. Input Voltage versus Output
Current
LMUN5311DW-24/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5334DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 101. VCE(sat) versus IC
100
Figure 102. DC Current Gain
3.5
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
75°C
10
25°C
1
0.1
TA = −25°C
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 103. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 104. Output Current versus Input
Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 105. Input Voltage versus Output
Current
LMUN5311DW-25/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5334DW1T1 PNP TRANSISTOR
75°C
−25°C
25°C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
Figure 106. VCE(sat) versus IC
30
75°C
100
TA = −25°C
25°C
10
1
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 107. DC Current Gain
LMUN5311DW-26/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5335DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 108. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 110. Output Capacitance
50
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 111. Output Current versus Input
Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 109. DC Current Gain
12
10
25°C
10
1
50
TA = −25°C
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 112. Input Voltage versus Output
Current
LMUN5311DW-27/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5335DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 113. VCE(sat) versus IC
100
Figure 114. DC Current Gain
4.5
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
25°C
10
75°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 115. Output Capacitance
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 116. Output Current versus Input
Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 117. Input Voltage versus Output
Current
LMUN5311DW-28/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 SERIES
SC-88/SOT-363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: INCH.
G
DIM
MIN
6
5
4
- B-
S
1
2
3
0.2 (0.008) M B M
D6PL
N
J
INCHES
MAX
MILLIMETERS
MIN
MAX
A
B
C
0.071
0.045
0.031
0.087
0.053
0.043
1.80
1.15
0.80
D
G
H
J
K
N
S
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.10
2.20
1.35
1.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
C
PIN 1. EMITTER 2
2. BASE 2
K
H
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
0.4 mm (min)
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
LMUN5311DW-29/29